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电子与电脑 2010年第2期10卷 23-25页

作者： sige sige(sige半导体)

市场定位sige半导体的创新型射频解决方案使消费者所仰赖的无线多媒体网络和相关应用落实在生活中，并且每天都能享用。

关键词： sige 半导体无线多媒体网络市场定位消费者创新型射频

基于sige材料的热电器件输出性能仿真计算分析

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稀有金属 2024年第3期48卷 378-387页

作者：赵明孙陆军黄望哩肖尊奇姜志忠中国科学院合肥物质科学研究院核能安全技术研究所安徽合肥230031 中国科学技术大学研究生院科学岛分院安徽合肥230026

近年来,高温热电材料sige合金的制备工艺不断优化,其热电优值得到不断提升,作为温差发电器件材料在未来深空探测装备发电应用中展现出巨大的应用价值。基于目前研究发展的sige合金,在考虑接触电阻与热阻的基础上,利用ANSYS软件构建了平... 详细信息

近年来,高温热电材料sige合金的制备工艺不断优化,其热电优值得到不断提升,作为温差发电器件材料在未来深空探测装备发电应用中展现出巨大的应用价值。基于目前研究发展的sige合金,在考虑接触电阻与热阻的基础上,利用ANSYS软件构建了平面型sige热电器件的仿真模型,分析电极厚度、电偶臂间距、电偶臂结构、热损和热端温度变化对器件输出性能影响。结果表明,器件开路电压和最大输出功率分别为0.315 V和0.56 W,与器件实验结果的误差均小于5%,模型具有较好的计算精度。减小热端SiMo电极厚度和电偶臂间距有效提高了器件输出性能,当器件电极厚度为1 mm,电偶臂间距为3 mm时,输出功率和热电效率达0.85 W和6.80%。结构设计发现,当n型和p型电偶臂横截面积比为0.90时,输出功率获得最大值;面积比为1.10时,转换效率获得最大值。器件与环境之间换热系数的增大有利于输出功率的提高,但转换效率大幅降低。器件输出性能变化相对热端温度变化具有滞后性,温度阶跃变化之后重新达到稳态所需要的时间为0.048 s,大于温度线性变化重新达到稳态所需要的时间0.022 s。研究结果可为后续器件的加工制备提供理论指导。

关键词： sige 热电器件数值模拟输出性能

基于室温铁磁性的(Fe,Al)共掺杂sige铁磁pn二极管的可调整流和磁阻特性

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Science China Materials 2024年第2期67卷 573-579页

作者：李加飞张析向钢 College of Physics Sichuan UniversityChengdu 610064China

Ⅳ族稀磁半导体因其优异的磁电性能,以及在与当前主流半导体集成技术兼容的自旋电子器件中具有广阔的应用前景而受到越来越多的关注.事实上,具有室温铁磁性的Ⅳ族稀磁半导体及其衍生器件更有望在实际中得以应用.本工作设计并制备了基于p... 详细信息

Ⅳ族稀磁半导体因其优异的磁电性能,以及在与当前主流半导体集成技术兼容的自旋电子器件中具有广阔的应用前景而受到越来越多的关注.事实上,具有室温铁磁性的Ⅳ族稀磁半导体及其衍生器件更有望在实际中得以应用.本工作设计并制备了基于p型(Fe,Al)共掺杂sige薄膜和n型Ge衬底的磁性pn二极管.磁性测量以及磁阻和反常霍尔效应测试揭示了p型(Fe,Al)共掺杂sige薄膜的室温铁磁性.有趣的是,磁性pn异质结表现出磁场可调的整流和磁阻行为.我们的研究结果为制备具有室温铁磁性的Ⅳ族稀磁半导体提供了一种可选策略,并为Ⅳ族稀磁半导体的实际自旋电子应用提供了范例.

关键词： diluted magnetic semiconductor sige pn junction rectification magnetoresistance

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嗜酸性粒细胞在变应性鼻炎中的研究进展

中文科技期刊数据库（全文版）医药卫生 2024年第5期 13-18页

作者：冯菊芬黄丽媛王曼韦福依右江民族医学院研究生学院广西百色533000 右江民族医学院附属西南医院广西百色533000

变应性鼻炎是耳鼻喉常见的慢性炎症性疾病,探索变应性鼻炎的发病机制是目前的研究热点。目前大量研究发现嗜酸性粒细胞与变应性鼻炎发病相关,本文主要综述嗜酸性粒细胞在变应性鼻炎中的作用,从嗜酸性粒细胞的发生、发展及存在部位进行... 详细信息

变应性鼻炎是耳鼻喉常见的慢性炎症性疾病,探索变应性鼻炎的发病机制是目前的研究热点。目前大量研究发现嗜酸性粒细胞与变应性鼻炎发病相关,本文主要综述嗜酸性粒细胞在变应性鼻炎中的作用,从嗜酸性粒细胞的发生、发展及存在部位进行分析探讨,以及探讨嗜酸性粒细胞在变应性鼻炎治疗中的作用的研究进展,讨论变应性鼻炎在针对嗜酸性粒细胞的生物制剂的研究,同时以发现存在的问题及新的研究方向。

关键词：变应性鼻炎嗜酸性粒细胞 sige 发病机制

Thermoelectric enhancement of p-type Si_(80)Ge_(20) alloy via co-compositing of dual oxides:Respective regulation for power factor and thermal conductivity byβ-Ga_(2)O_(3) and SiO_(2) aerogel powders

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Journal of Advanced Ceramics 2023年第2期12卷 228-241页

作者： Huajun LAI Ying PENG Mengfei WANG Runze SHI Junliang CHEN Chengyan LIU Yifeng WANG Lei MIAO Haiqiao WEI Key Laboratory of Information Material Ministry of EducationGuangxi Key Laboratory of Information MaterialSchool of Materials Science and EngineeringGuilin University of Electronic TechnologyGuilin 541004China Guangxi Key Laboratory of Precision Navigation Technology and Application School of Information and CommunicationGuilin University of Electronic TechnologyGuilin 541004China School of Physical Science and Technology Guangxi UniversityNanning 530004China College of Materials Science and Engineering Nanjing Tech UniversityNanjing 210009China State Key Laboratory of Engines Tianjin UniversityTianjin 300072China

Si-based thermoelectric(TE)materials are exhibiting remarkable perspectives in self-energized applications with their special advantages.However,the relatively high total thermal conductivity(κ)prevents their TE enhancement.Here,a strategy of co-compositing dual oxides was implemented for enhancing the TE properties of p-type Si_(80)Ge_(20) bulks.Composited Ga2O_(3) was demonstrated to enhance the power factor(PF)due to the crystallization-induced effect of produced Ga by decomposition on sige matrix.Associating with compositing SiO_(2) aerogel(a-SiO_(2))powder,not only introduced the fine amorphous inclusions and decreased the grain size of host matrix,but also various nano morphologies were formed,i.e.,nano inclusions,precipitations,twin boundaries(TBs),and faults.Combining with the eutectic Ge,hierarchical scattering centers impeded the phonon transport comprehensively(decreasing the phonon group velocity(a v)and relaxation time)for reducing the lattice-induced thermal conductivity(lκ).As a result,a minimumκof 2.38 W·m^(−1)·K^(−1) was achieved,which is significantly dropped by 32.6%in contrast with that of the pristine counterpart.Ultimately,a maximal dimensionless figure of merit(ZT)of 0.9 was achieved at 600℃,which is better than those of most corresponding oxide-composited Si-based bulks.

关键词： thermoelectric(TE)materials sige Ga_(2)O_(3) SiO_(2)aerogel(a-SiO_(2)) average velocity of sound hierarchical scattering

Realizing high thermoelectric performance for p-type sige in medium temperature region via TaC compositing

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Journal of Materiomics 2023年第5期9卷 984-991页

作者： Zheng Fan JiSheng Liang Jun-Liang Chen Ying Peng Huajun Lai Jian Nong Chengyan Liu Wangyang Ding Lei Miao Guangxi Key Laboratory for Relativity Astrophysics State Key Laboratory of Featured Metal Materials and Life-cycle Safety for Composite StructuresSchool of Physical Science and TechnologyGuangxi UniversityNanning530004China Engineering Research Center of Electronic Information Materials and Devices Ministry of EducationGuangxi Key Laboratory of Information MaterialGuilin University of Electronic TechnologyGuilin541004China Guangxi Key Laboratory of Precision Navigation Technology and Application Guilin University of Electronic TechnologyGuilin541004China Guangxi Academy of Sciences Nanning530007China

sige is recognised as an excellent thermoelectric material with superior mechanical properties and thermal stability in regions with high temperatures.This study explores a novel strategy for coregulating thermoelectric transport parameters to achieve high thermoelectric properties of p-type sige in the mid-temperature region by incorporating nano-TaC into sige combined ball milling with spark plasma sintering.By optimizing the amount of TaC in the sige matrix,the power factors were significantly increased due to the modulation doping effect based on the work function matching of sige with TaC.Simultaneously,the ensemble effect of the nanostructure leads to a significant decrease in thermal conductivity.Thus,a high ZT of 1.06 was accomplished at 873 K,which is 64%higher than that of typical radioisotope thermoelectric generator.Our research offers a novel strategy for expanding and enhancing the thermoelectric properties of sige materials in the medium temperature range.

关键词： sige Thermoelectric Work function matching Modulation doping effect Phonon scattering

A sige W-band frequency tripler with 10.5 dBm output power using harmonic suppression technique

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Science China(Information Sciences) 2022年第4期65卷 285-286页

作者： Huanbo LI Jixin CHEN Peigen ZHOU Debin HOU Wei HONG State Key Laboratory of Millimeter Waves Southeast University Purple Mountain Laboratory

Dear editor,The rapid development of silicon-based process has motivated great attention in mm-wave applications. Recently,W-band frequencies have become an appealing choice for various wireless applications, such as ... 详细信息

关键词： sige W-band frequency triper harmonic suppression transformer

Small-signal model parameter extraction for microwave sige HBTs based on Y- and Z-parameter characterization

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Journal of Semiconductors 2009年第8期30卷 71-77页

作者：付军 Tsinghua National Laboratory for Information Science and Technology (TNList) Institute of MicroelectronicsTsinghua University

High frequency intrinsic small-signal model parameter extraction for microwave sige heterojunction bipolar transistors is studied, with a focus on the main feedback elements including the emitter series resistor, internal and external base-collector capacitors as well as the base series resistor, all of which are important in determining the behavior of the device equivalent circuit. In accordance with the respective features of definition of the Y- and Z-parameters, a novel combined use of them succeeds in reasonably simplifying the device equivalent circuit and thus decoupling the extraction of base-collector capacitances from other model parameters. As a result, a very simple direct extraction method is proposed. The proposed method is applied for determining the sige HBT small-signal model parameters by taking numerically simulated Y- and Z-parameters as nominal ＂measurement data＂ with the help of a Taurus-device simulator. The validity of the method is preliminarily confirmed by the observation of certain linear relations of device frequency behavior as predicted by the corresponding theoretical analysis. Furthermore, the extraction results can be used to reasonably account for the dependence of the extracted model parameters on device geometry and process parameters, reflecting the explicit physical meanings of parameters, and especially revealing the distributed nature of the base series resistor and its complex interactions with base-collector capacitors. Finally, the accuracy of our model parameter extraction method is further validated by comparing the modeled and simulated S-parameters as a function of frequency.

关键词： sige heterojunction bipolar transistors small-signal model parameter extraction

A fully monolithic 0.18 μm sige BiCMOS power amplifier design

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Journal of Semiconductors 2011年第5期32卷 99-103页

作者：陈磊阮颖苏杰张书霖石春琦赖宗声 Institute of Microelectronics Circuit & System East China Normal University

A fully monolithic power amplifier （PA） for multi-mode front end IC integration is presented. The PA is fabricated in an IBM 7WL 0.18 μm sige BiCMOS process with all the matching networks integrated on a chip. After load-pull test to find the best power stage size and layout optimization, the measured results show that the PA can obtain a 24 dBm maximum output power at 2.4 GHz, the output 1 dB compression point is 21 dBm at 5 dBm input, and the PAE is 18%. This PA is complete on-chip tested without any bonding wires and on-board matching, targeting fully power module integration in multi-mode system on chip.

关键词： sige BiCMOS power amplifier monolithic multi-mode

Operation of silicon-germanium heterojunction bipolar transistors with different structures at deep cryogenic temperature

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Science Bulletin 2019年第7期64卷 469-477页

作者： Guofang Yu Renrong Liang Xiawa Wang Jun Xu Tian-Ling Ren Institute of Microelectronics Tsinghua University Beijing National Research Center for Information Science and Technology (BNRist) Tsinghua University

In this work, the device performances of discrete and integrated sige heterojunction bipolar transistors(HBTs) with different device structures from 300 to 4.8 K were investigated. The turn-on voltages of baseemitter and base-collector junctions increased non-linearly with temperature cooled to 4.8 K. Energy bandgap engineering was taken into account for the analytical model of the turn-on voltage versus temperature. Incomplete ionization occurred in the base-collector junction because of the low doping concentration. The trap-assisted tunneling current in the forward base current was clearly observed below20 K. The ideality factor and saturation current were shown to be temperature dependence. The ideality factor was much larger than 2 below 40 K, indicating that the current is not only contributed by drift, diffusion and recombination, but also by tunneling. The peak current gain of the discrete sige HBTs achieved the maximum value of 3,388 at 80 K, while that of the integrated was 546 at 140 K. The transconductance in logarithm was linearly dependent on reciprocal temperature above 50 K, but flattened below 50 K.Early effect was evidently observed below 77 K in the fixed base current output characteristics of the discrete sige HBTs, and it was not obvious for the integrated sige HBTs.

关键词： sige HBTs Quantum computing Cryogenic temperature Analytical model