Thermoelectric enhancement of p-type Si_(80)Ge_(20) alloy via co-compositing of dual oxides:Respective regulation for power factor and thermal conductivity byβ-Ga_(2)O_(3) and SiO_(2) aerogel powders

作     者：Huajun LAI Ying PENG Mengfei WANG Runze SHI Junliang CHEN Chengyan LIU Yifeng WANG Lei MIAO Haiqiao WEI 

作者机构：Key Laboratory of Information MaterialMinistry of EducationGuangxi Key Laboratory of Information MaterialSchool of Materials Science and EngineeringGuilin University of Electronic TechnologyGuilin 541004China Guangxi Key Laboratory of Precision Navigation Technology and ApplicationSchool of Information and CommunicationGuilin University of Electronic TechnologyGuilin 541004China School of Physical Science and TechnologyGuangxi UniversityNanning 530004China College of Materials Science and EngineeringNanjing Tech UniversityNanjing 210009China State Key Laboratory of EnginesTianjin UniversityTianjin 300072China 

出 版 物：《Journal of Advanced Ceramics》 (先进陶瓷（英文）)

年 卷 期：2023年第12卷第2期

页      面：228-241页

核心收录：

学科分类：081702[工学-化学工艺] 0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 0817[工学-化学工程与技术] 08[工学] 070205[理学-凝聚态物理] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：funded by the National Natural Science Foundation of China (Grant Nos.U21A2054,52061009,52273285,and 52262032) Guangxi Natural Science Foundation of China (Grant No.2020GXNSFAA159111) Guangxi Science and Technology Project (Grant Nos.2021AC19206 and AD20159006) the National Key R&D Program of China (Grant No.2017YFE0198000) 

主　　题：thermoelectric(TE)materials SiGe Ga_(2)O_(3) SiO_(2)aerogel(a-SiO_(2)) average velocity of sound hierarchical scattering 

摘      要：Si-based thermoelectric(TE)materials are exhibiting remarkable perspectives in self-energized applications with their special ***,the relatively high total thermal conductivity(κ)prevents their TE ***,a strategy of co-compositing dual oxides was implemented for enhancing the TE properties of p-type Si_(80)Ge_(20) *** Ga2O_(3) was demonstrated to enhance the power factor(PF)due to the crystallization-induced effect of produced Ga by decomposition on SiGe *** with compositing SiO_(2) aerogel(a-SiO_(2))powder,not only introduced the fine amorphous inclusions and decreased the grain size of host matrix,but also various nano morphologies were formed,i.e.,nano inclusions,precipitations,twin boundaries(TBs),and *** with the eutectic Ge,hierarchical scattering centers impeded the phonon transport comprehensively(decreasing the phonon group velocity(a v)and relaxation time)for reducing the lattice-induced thermal conductivity(lκ).As a result,a minimumκof 2.38 W·m^(−1)·K^(−1) was achieved,which is significantly dropped by 32.6%in contrast with that of the pristine ***,a maximal dimensionless figure of merit(ZT)of 0.9 was achieved at 600℃,which is better than those of most corresponding oxide-composited Si-based bulks.