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Formation of Laser-Induced Periodic Surface Structures on reaction-bonded silicon carbide by Femtosecond Pulsed Laser Irradiation

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Nanomanufacturing and Metrology 2023年第1期6卷 36-48页

作者： Tushar Meshram Jiwang Yan School of Integrated Design Engineering Graduate School of Science and TechnologyKeio UniversityHiyoshi 3-14-1Kohoku-kuYokohama 223-8522Japan Department of Mechanical Engineering Faculty of Science and TechnologyKeio UniversityHiyoshi 3-14-1Kohoku-kuYokohama 223-8522Japan

reaction-bonded silicon carbide(RB-SiC)is an excellent engineering material with high hardness,stiffness,and resistance to chemical ***,its widespread use is hindered due to the properties mentioned above,making it difficult to machine functional surface structures through mechanical and chemical *** study investigated the fundamental characteristics of laser-induced periodic surface structures(LIPSSs)on RB-SiC via femtosecond pulsed laser irradiation at a wavelength of 1028 ***-spatial-frequency LIPSS(LSFL)and high-spatial-frequency LIPSS(HSFL)formed on the surface along directions perpendicular to the laser *** grains surrounded by a large amount of Si show a reduced threshold for LIPSS *** varying laser fluence and scanning speed,HSFL-LSFL hybrid structures were generated on the SiC *** electron microscopy observations and Raman spectroscopy were carried out to understand the formation mechanism of the hybrid LIPSS.A possible mechanism based on the generation of multiple surface electromagnetic waves due to the nonlinear response of SiC was proposed to explain the hybrid structure ***,the direction of laser scanning with respect to laser polarization affects the uniformity of the generated LIPSS.

关键词： reaction-bonded silicon carbide Surface texturing Laser-induced periodic surface structure Composite material Hybrid nanostructure

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Effect of Carbon Containing Materials on Pure Carbon reaction-bonded SiC

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China's Refractories 2008年第1期17卷 22-25页

作者： JI Xiaoli WEI Lei SUN Feng Key Laboratory for Silicate Materials Science and Engineering of Ministry Education Wuhan University of Science and Technology Wuhan 430070 China

Petroleum coke, graphite, gas carbon and lower sulfur carbon black were used to prepare reaction-bonded silicon carbide. The influences of different carbon containing materials on properties of carbonaceous precursors, sintering process, and microstructure of the prepared SiC were researched. The results show that ：（ 1 ） With the density of carbon containing materials increasing, the porosity of carbonaceous precursors decreases and the infiltrating process of liquid silicon is more difficult. （2） The reaction between carbon containing materials and liquid silicon, the volume effect is more obvious with the density of carbon containing materials increasing. （3） As the carbon containing materials density decreasing, residual carbon in reaction bonded SiC also decreases.

关键词： silicon carbide Carbon reaction-bonded silicon carbide

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