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Simulation of Voltage SET Operation in Phase-Change random access Memories with Heater Addition and Ring-Type Contactor for Low-Power Consumption by Finite Element Modeling

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Chinese Physics Letters 2010年第6期27卷 250-253页

作者： GONG Yue-Feng SONG Zhi-Tang LING Yun LIU Yan LI Yi-Jin State Key Laboratory of Functional Materials for Informatics Laboratory of Nanotechnology Shanghai Institute of Micro-system and Information Technology Chinese Academy of Sciences Shanghai 200050

A three-dimensional finite element model for phase change random access memory is established to simulate electric, thermal and phase state distribution during （SET） operation. The model is applied to simulate the SET behaviors of the heater addition structure （HS） and the ring-type contact in the bottom electrode （RIB） structure. The simulation results indicate that the small bottom electrode contactor （BEC） is beneficial for heat efficiency and reliability in the HS cell, and the bottom electrode contactor with size Fx=80 nm is a good choice for the RIB cell. Also shown is that the appropriate SET pulse time is lOOns for the low power consumption and fast operation.

关键词： SIMULATION methods & models PHASE transformations (Physics) random access memory ELECTRODES RELIABILITY (Engineering) ENERGY consumption

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Three-Dimensional Finite Element Simulations for the Thermal Characteristics of PCRAMs with Different Buffer Layer Materials

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Chinese Physics Letters 2010年第8期27卷 246-249页

作者：龚岳峰宋志棠凌云刘燕李宜瑾封松林 State Key Laboratory of Functionai Materials for Informatics Laboratory of Nanotechnology Shanghai Institute of Micro-system and Information Technology Chinese Academy of Sciences Shanghai 200050 Graduate School of the Chinese Academic of Sciences Beijing 100049

Simulation of the heat consumption in phase change random access memories （PCRAMs） is investigated by a three-dimensional finite element model. It is revealed that the thermal conductivity and electrical conductivity of the buffer layer are crucial in controlling the heating efficiency in RESET process. The buffer layer mater/Ms W, TiN, WOa, Ti02 and poly-germanium （poly-Ge） are applied in the simulation respectively, and compared with each other. The simulation results show that limitation of electrical conductivity is effective on heating efficiency and the limitation of thermal conductivity is important on the reliable RESET process.

关键词： FINITE element method SIMULATION methods & models DIMENSIONAL analysis random access memory THERMAL conductivity ELECTRIC conductivity ELECTRIC heating

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Resistance switching for RRAM applications

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Science China(Information Sciences) 2011年第5期54卷 1073-1086页

作者： CHEN Frederick T. LEE HengYuan HSU YenYa CHEN PangShiu LIU WenHsing TSAI ChenHan SHEU ShyhShyuan TSAI MingJinn Nanoelectronic Technology Division Electronics and Optoelectronics Research Laboratories Industrial Technology Research Institute (ITRI) Department of Chemical and Materials Engineering Ming Shin University of Science and Technology

Resistive random access memory (RRAM or ReRAM) is a non-volatile memory (NVM) technology that consumes minimal energy while offering sub-nanosecond switching. In addition, the data stability against high temperature and cycling wear is very robust, allowing new NVM applications in a variety of markets (au- tomotive, embedded, storage, RAM). Based on sudden conduction through oxide insulators, the characteristics of RRAM technology have still yet to be fully described. In this paper, we present our current understanding of this very promising technology.

关键词： random access memory storage oxide breakdown oxygen vacancies

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Nonvolatile SRAM cell based on CuxO

Nonvolatile SRAM cell based on CuxO

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2008 9th International Conference on Solid-State and Integrated-Circuit Technology

作者： Xiaoyong Xue Gang Jin Ji Zhang Le Xu Yiqing Ding Yufeng Xie Changhong Zhao B. A. Chen Yinyin Lin* ASIC & System State Key Lab Fudan University Shanghai 200433 P. R. China ASIC ＆ System State Key Lab Fudan University

A nonvolatile static random access memory （NVSRAM） cell with two back-up CuxO memory devices is proposed in this paper. The manufacturing process is compatible with the standard CMOS process. By adopting a dynamic supply voltage scheme, the proposed cell can work correctly in four different operation modes. Compared with the standard SRAM cell, the proposed cell offers non-volatile storage which allows the unused blocks of SRAM to be powered down to save energy.

关键词： [IEEE Keyword]International Electron Devices Meeting CMOS process Performance evaluation Leakage current Nonvolatile memory Resistance random access memory

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Development of three-dimensional MOS structures from trench-capacitor DRAM cell to pillar-type transistor

Development of three-dimensional MOS structures from trench-...

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2008 9th International Conference on Solid-State and Integrated-Circuit Technology

作者： Hideo Sunami Hiroshima University Research Institute for Nanodevice and Bio Systems 1-4-2 KagamiyamaHigashi-hiroshimaHiroshima 739-8527Japan

The author invented a trench-capacitor dynamic -random-access memory （DRAM） cell and applied the Japanese patent in 1975. The first trial development of trench-capacitor DRAM cell was presented in 1982 in 1-Mbit DRAM era. This might be the first attempt to utilize vertical wall of silicon substrate for metal-oxide- semiconductor （MOS） structure. Subsequent to this trial various kinds of vertical-channel MOS transistors have been proposed in integrated circuits field. This presentation will describe circumstances of inven- tion and development of the trench-capacitor DRAM cell and subsequent development of several vertical-channel MOS transistors done by the author’s group.

关键词： [IEEE Keyword]Technological innovation Microprocessors Logic gates Computer architecture Transistors Capacitors random access memory

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Bistable resistive switching of pulsed laser deposited polycrystalline La0.67Sr0.33MnO3 films

Bistable resistive switching of pulsed laser deposited polyc...

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2008 9th International Conference on Solid-State and Integrated-Circuit Technology

作者： Lina Huang Bingjun Qu Litian Liu Institute of Microelectronics Tsinghua University

Bistable resistive switching of polycrystalline LaSrMnO(LSMO) thin films prepared by pulsed laser deposition(PLD) was investigated by applying voltage pulses with current *** LSMO films sandwiched by Ag and Pt electrodes show nonvolatile and reversible resistance switching behavior from a higher resistance state to a lower state with no data loss upon continuous *** active pulse width window was observed and the related threshold voltage was ***,the write/erase endurance switching was estimated over 10 cycles,demonstrating a strong potential with respect to future nonvolatile random access memory applications.

关键词： [IEEE Keyword]Reliability Nonvolatile memory random access memory Physics Resistance Films Switches

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