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Hoeffding's inequality for Markov processes via solution of poisson's equation

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Frontiers of Mathematics in China 2021年第2期16卷 543-558页

作者： Yuanyuan LIU Jinpeng LIU school of Mathematics and statistics New CampusCentral South UniversityChangsha 410083China

We investigate Hoeffding's inequality for both discrete-time Markov chains and continuous-time Markov processes on a general state space. Our results relax the usual aperiodicity restriction in the literature, and the explicit upper bounds in the inequalities are obtained via the solution of poisson's equation. The results are further illustrated with applications to queueing theory and reective diffusion processes.

关键词： Hoeffding's inequality Markov process poisson's equation

Identification of the normal and abnormal glow discharge modes in a neon-xenon gas mixture at low pressure

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Plasma science and Technology 2018年第11期20卷 70-75页

作者： B HECHELEF A BOUCHIKHI University of saida Faculty of Technology Department of Electrical Engineering Saida 20000 Algeria

In this paper, we focused on the identification of the normal and abnormal glow discharge modes in a neon-xenon gas mixture at low pressure. We considered four gas mixtures： 90%Ne-10%Xe, 80%Ne-20%Xe, 70%Ne-30%Xe and 50%Ne-50%Xe at 1.5 Torr. The range of the gap voltage is 150-500 V. A one-dimensional fluid model with multiple species was used in this work, and the metastable state of the atoms as well as the radiation effects were integrated into the model too. The input data changed for each percentage in the gas mixture, and was calculated by BOLsIG＋ software. The parameters of particle transport and their rate coefficients strictly depend on the mean electron energy. The results show that the neon ion density is negligible compared to the xenon ion density, mostly in the case of 50%Ne-50%Xe.

关键词： gas mixtures Boltzmann's equation poisson's equation Blanc's law two-order fluid model

2D DC subnormal Glow Discharge in Argon

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Plasma science and Technology 2010年第1期12卷 59-66页

作者： A.BOUCHIKHI A.HAMID University of saida Faculty of Sciences and Technology Department of Electrical Engineering University of sciences and Technology of Oran

A two-dimensional time-dependent fluid model was developed and used to describe a DC subnormal glow discharge in argon with Cartesian geometry. This configuration allows us to take into account the transverse expansion of the discharge. A hydrodynamic fluid model used in this paper is based on the moments of the Boltzmann transport equation. The resultant set of governing equations consists of continuity equations （fluxes and densities） for electrons and ions, an energy equation for electrons, and poisson＇s equation. simulation results are presented for the densities of charged particles, the electric voltage, the electric field, and the electron temperature of the discharge. The results were compared with those obtained in the literature.

关键词： subnormal glow discharge Boltzmann equation electron temperature poisson's equation

A two-dimensional analytical-model-based comparative threshold performance analysis of sOI-sON MOsFETs

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Journal of semiconductors 2011年第10期32卷 32-38页

作者： sanjoy Deb saptarsi Ghosh N Basanta singh A K De subir Kumar sarkar Department of Electronics&Telecommunication Engineering Jadavpur University Department of Electronics&Communication Engineering Manipur Institute of Technology Department of Electronics&Communication Engineering National Institute of Technology

A generalized threshold voltage model based on two-dimensional poisson analysis has been developed for sOI/sON *** short channel field effects,such as fringing fields,junction-induced lateral fields and substrate fields,are carefully investigated,and the related drain-induced barrier-lowering effects are incorporated in the analytical threshold voltage *** analytical model-based simulation,the threshold voltage roll-off and subthreshold slope for both structures are compared for different operational and structural parameter *** of analytical simulation are compared with the results of the ATLAs 2D physics-based simulator for verification of the analytical *** performance of an sON MOsFET is found to be significantly different from a conventional sOI *** short channel effects are found to be reduced in an sON,thereby resulting in a lower threshold voltage roll-off and a smaller subthreshold *** type of analysis is quite useful to figure out the performance improvement of sON over sOI structures for next generation short channel MOs devices.

关键词： silicon-on-insulator silicon-on-nothing poisson's equation short channel effects threshold voltage roll-off subthreshold slope

Two-Dimensional Numerical simulation of the DC Glow Discharge in the Normal Mode and with Einstein’s Relation of Electron Diffusivity

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Plasma science and Technology 2012年第11期14卷 965-973页

作者： A.BOUCHIKHI University of sada Faculty of the Sciences and TechnologyDepartment of the Electrical Engineering

This paper presents an investigation of a DC glow discharge at low pressure in the normal mode and with Einstein＇s relation of electron diffusivity. Two-dimensional distributions in Cartesian geometry are presented in the stationary state, including electric potential, electron and ion densities, longitudinal and transverse electrics fields as well as electron temperature. Our results are compared with those obtained in existing literature. The model used in this work is based on the first three moments of Boltzmann＇s equation. They serve as the continuity equation, the momentum transfer and the energy equations. The set of equations for charged particles presented in monatomic argon gas are coupled in a self-consistent way with poisson＇s equation. A parametric study varying the cathode voltage, gas pressure, and secondary electron emission coefficient predicts many of the well-known features of DC discharges.

关键词： normal glow discharge Boltzmann's equation poisson's equation electrondiffusivity Einstein's relation

NUMERICAL sIMULATIONs OF WATER WAVE DYNAMICs BAsED ON sPH METHODs

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Journal of Hydrodynamics 2009年第6期21卷 843-850页

作者： ZHENG Kun sUN Zhao-chen sUN Jia-wen ZHANG Zhi-ming YANG Guo-ping ZHOU Feng state Key Laboratory of Coastal and Offshore Engineering Dalian University of Technology Dalian 116024 China CCCC Water Transportation Consultants Co. Ltd Beijing 100007 China

A numerical model was established for simulating water wave dynamic problems by adopting the smoothed Particle Hydrodynamics （sPH） methods of iterative solution of poisson＇s equation for pressure field, and meanwhile the sub-grid turbulence model was applied in the simulation so as to more accurately describe the turbulence characteristics at the time of wave breaking. In this article, simulation of the problem of the dam collapsing verifies the compoting accuracy of this method, and its results can be identical with the results of VOF method and the experimental results by comparison. Numerical simulations of the course of solitary wave and cnoidal wave run-up breaking on beaches were conducted, and the results are basically consistent with experimental results This indicates that the sPH method is effective for the numerical simulation of the complex problems of water wave dynamics.

关键词： smoothed Particle Hydrodynamics (sPH) poisson's equation water wave dynamics

New 4H silicon carbide metal semiconductor field-effect transistor with a buffer layer between the gate and the channel layer

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Chinese Physics B 2012年第1期21卷 419-425页

作者： Zhang Xian-Jun Yang Yin-Tang Duan Bao-Xing Chen Bin Chai Chang-Chun song Kun 373#Key Laboratory of Wide Band-Gap semiconductor Materials and Devices of the Ministry of Education School of MicroelectronicsXidian UniversityXi'an 710071China

A new 4H silicon carbide metal semiconductor field-effect transistor （4H-siC MEsFET） structure with a buffer layer between the gate and the channel layer is proposed in this paper for high power microwave applications. The physics-based analytical models for calculating the performance of the proposed device are obtained by solving one- and two-dimensional poisson＇s equations. In the models, we take into account not only two regions under the gate but also a third high field region between the gate and the drain which is usually omitted. The direct-current and the alternating- current performances for the proposed 4H-siC MEsFET with a buffer layer of 0.2 ~tm are calculated. The calculated results are in good agreement with the experimental data. The current is larger than that of the conventional structure. The cutoff frequency （fT） and the maximum oscillation frequency （fmax） are 20.4 GHz and 101.6 GHz, respectively, which are higher than 7.8 GHz and 45.3 GHz of the conventional structure. Therefore, the proposed 4H-siC MEsFET structure has better power and microwave performances than the conventional structure.

关键词： 4H silicon carbide metal semiconductor field-effect transistor poisson's equation

Effect of a gate buffer layer on the performance of a 4H-siC schottky barrier field-effect transistor

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Journal of semiconductors 2012年第7期33卷 34-38页

作者：张现军杨银堂柴常春段宝兴宋坤陈斌 Key Laboratory of Wide Band-Gap semiconductor Materials and Devices of the Ministry of Education School of MicroelectronicsXidian University

A lower doped layer is inserted between the gate and channel layer and its effect on the performance of a 4H-siC schottky barrier field-effect transistor （MEsFET） is investigated. The dependences of the drain current and small signal parameters on this inserted gate-buffer layer are obtained by solving one-dimensional （l-D） and two-dimensional （2-D） poisson＇s equations. The drain current and small signal parameters of the 4H-siC MEsFET with a gate-buffer layer thickness of 0.15 μm are calculated and the breakdown characteristics are simulated. The results show that the current is increased by increasing the thickness of the gate-buffer layer; the breakdown voltage is 160 V, compared with 125 V for the conventional 4H-siC MEsFET; the cutoff frequency is 27 GHz, which is higher than 20 GHz of the conventional structure due to the lower doped gate-buffer layer.

关键词： 4H-siC schottky barrier field-effect transistor poisson's equation

Analytical modeling of drain current and RF performance for double-gate fully depleted nanoscale sOI MOsFETs

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Journal of semiconductors 2012年第2期33卷 28-35页

作者： Rajiv sharma sujata Pandey shail Bala Jain Department of Electronics and Communication Engineering Guru Gobind Singh Indraprastha UniversityDelhiIndia Department of Electronics and Communication Engineering Amity UniversitySector-125 NoidaIndia

A new 2D analytical drain current model is presented for symmetric double-gate fully depleted nanoscale sOI *** of device parameters like transconductance for double-gate fully depleted nanoscale sOI MOsFETs is also carried *** this work is concluded by modeling the cut-off frequency, which is one of the main figures of merit for analog/RF performance for double-gate fully depleted nanoscale sOI *** results of the modeling are compared with those obtained by a 2D ATLAs device simulator to verify the accuracy of the proposed model.

关键词： double-gate fully depleted silicon-on-insulator poisson's equation radio frequency ATLAs