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Reverse current reduction of Ge photodiodes on Si without post-growth annealing

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Chinese Optics Letters 2009年第4期7卷 286-290页

作者： Sungbong Park Shinya Takita Yasuhiko Ishikawa Jiro Osaka Kazumi Wada Department of Materials Engineering University of Tokyo

A new approach to reduce the reverse current of Ge pin photodiodes on Si is presented, in which an i-Si layer is inserted between Ge and top Si layers to reduce the electric field in the Ge layer. Without post- growth annealing, the reverse current density is reduced to -10 mA/cm^2 at -1 V, i.e., over one order of magnitude lower than that of the reference photodiode without i-Si layer. However, the responsivity of the photodiodes is not severely compromised. This lowered-reverse-current is explained by band-pinning at the i-Si/i-Ge interface. Barrier lowering mechanism induced by E-field is also discussed. The presented ＂non-thermal＂ approach to reduce reverse current should accelerate electronics-photonics convergence by using Oe on the Si complementary metal oxide semiconductor （CMOS） platform.

关键词： CMOS integrated circuits Electric fields Germanium Metals MOS devices Oxide semiconductors photodiodes Silicon Silicon on insulator technology

Detection performance of trigger-controlled Geiger-mode avalanche photodiodes in weak optical signal detection

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Chinese Optics Letters 2016年第4期14卷 81-85页

作者：赵鹏袁亚博张艳钱卫平 Beijing Institute of Tracking and Telecommunications Technology Beijing 100094 China Key Laboratory of Space Object Measurement Beijing 100094 Chine

This Letter introduces a trigger-controlled Geiger-mode avalanche photodiode （GM-APD）. A hierarchical look- back-upon tree recurrence method is given to predict the performance of trigger-controlled GM-APDs under different trigger-count upper limits. In addition, the normalized detection probability is defined to evaluate the detection performance of trigger-controlled GM-APDs in typical weak optical signal detection （impulse noise and continuous noise situations）. Theoretical analyses show that the trigger-controlled GM-APD improves the detection performance of GM-APDs in weak optical signal detection via the optimization of the trigger-count upper limit, compared with single-trigger and multi-trigger GM-APDs.

关键词： Avalanche photodiodes Geiger counters Impulse noise Optical signal processing photodiodes

Study on the saturation characteristics of high-speed uni-traveling-carrier photodiodes based on field screening analysis

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Chinese Optics Letters 2011年第8期9卷 79-82页

作者：石拓熊兵孙长征罗毅 Tsinghua National Laboratory for Information Science and Technology State Key Lab on Integrated OptoelectronicsDepartment of Electronic EngineeringTsinghua University

A back-illuminated mesa-structure InGaAs/InP charge-compensated uni-traveling-carrier （UTC） photodi- ode （PD） is fabricated, and its saturation characteristics are investigated. The responsivity of the 40-μm- diameter PD is as high as 0.83 A/W, and the direct current （DC） saturation current is up to 275 mA. The 1-dB compression point at the 3-dB cutoff frequency of 9 GHz is measured to be 100 mA, corresponding to an output radio frequency （RF） power of up to 20.1 dBm. According to the calculated electric field distributions in the depleted region under both DC and alternating current （AC） conditions, the saturation of the UTC-PD is cansed hv cnmnlete field screening at high optical iniectinn levels

关键词： DC power transmission Electric fields photodiodes

High-performance 4H-SiC p-i-n ultraviolet avalanche photodiodes with large active area

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Chinese Optics Letters 2019年第9期17卷 1-4页

作者：周幸叶谭鑫王元刚宋旭波韩婷婷李佳芦伟立顾国栋梁士雄吕元杰冯志红 National Key Laboratory of ASIC Hebei Semiconductor Research Institute

Ultraviolet(UV) detectors with large photosensitive areas are more advantageous in low-level UV detection applications. In this Letter, high-performance 4 H-SiC p-i-n avalanche photodiodes(APDs) with large active area(800 μm diameter) are reported. With the optimized epitaxial structure and device fabrication process,a high multiplication gain of 1.4 × 10^6 is obtained for the devices at room temperature, and the dark current is as low as ~10 p A at low reverse voltages. In addition, record external quantum efficiency of 85.5% at 274 nm is achieved, which is the highest value for the reported Si C APDs. Furthermore, the rejection ratio of UV to visible light reaches about 10^4. The excellent performance of our devices indicates a tremendous improvement for largearea SiC APD-based UV detectors. Finally, the UV imaging performance of our fabricated 4 H-SiC p-i-n APDs is also demonstrated for system-level applications.

关键词： Ultraviolet(UV) 4H-SiC p-i-n photodiodes

Distributed parameter circuit model for wideband photodiodes with inductive coplanar waveguide electrodes

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Chinese Optics Letters 2020年第6期18卷 40-44页

作者：韩亚茹熊兵孙长征郝智彪王健韩彦军汪莱李洪涛余佳东罗毅 Beijing National Research Center for Information Science and Technology(BNRist) Department of Electronic EngineeringTsinghua UniversityBeijing 100084China Center for Flexible Electronics Technology Tsinghua UniversityBeijing 100084China Flexible Intelligent Optoelectronic Device and Technology Center Institute of Flexible Electronics Technology of THUJiaxing 314006China

An equivalent circuit model including multi-section distributed parameters is proposed to analyze wideband photodiodes(PDs)with coplanar waveguide(CPW)electrodes.The model helps extract CPW parameters as well as intrinsic bandwidth parameters so that the influence of theCPW structure can be investigated,making it valuable for the design of high-performance PDs.PDs with an inductive 115Ωimpedance CPW are fabricated,and the 3 dB bandwidth is improved from 28 GHz to 37.5 GHz compared with PDs with a conventional 50Ωimpedance CPW.

关键词： photodiodes photodetector high-impedance coplanar waveguide

Enhanced solar-blind ultraviolet single-photon detection with a Geiger-mode silicon avalanche photodiode

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Chinese Optics Letters 2016年第3期14卷 5-8页

作者：师亚帆李召辉冯百成颜佩琴杜秉乘周慧潘海峰吴光 State Key Laboratory of Precision Spectroscopy East China Normal University State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Solar-blind ultraviolet detection is of great importance in astronomy and industrial and military applications. Here, we report enhanced solar-blind ultraviolet single-photon detection by a normal silicon avalanche photo- diode （Si APD） single-photon detector with a specially designed photon-collecting device. By re-focusing the reflected photon from the Si chip surface on the detection area by the aluminum-coated hemisphere, the detec- tion efficiency of the Si APD at 280 nm can be improved to 4.62%. This system has the potential for high-efficiency photon detection in the solar-blind ultraviolet regime with low noise.

关键词： Aluminum coatings Avalanche photodiodes Efficiency Military applications Photodetectors photodiodes Photons Silicon

Single-Photon Detection at Telecom Wavelengths

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Chinese Physics Letters 2007年第2期24卷 574-576页

作者：孙志斌马海强雷鸣王迪刘赵杰杨捍东吴令安翟光杰冯稷 Institute of Physics Chinese Academy of Sciences Beijing 100080

A single-photon detector based on an InGaAs avalanche photodiode has been developed for use at telecom wavelengths. A suitable delay and sampling gate modulation circuit are used to prevent positive and negative transient pulses from influencing the detection of true photon induced avalanches. A monostable trigger circuit eliminates the influence of avalanche peak jitter, and a dead time modulation feedback control circuit decreases the afterpulsing. From performance tests we lind that at the optimum operation point, the quantum efficiency is 12% and the dark count rate 1.5 × 10^-6 ns^-1, with a detection rate of 500 kHz.

关键词： AVALANCHE PERFORMANCE photodiodes

Characteristics of the CsI:Tl Scintillator Crystal for X-Ray Imaging Applications

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Materials Sciences and Applications 2018年第2期9卷 268-280页

作者： Maria da Conceicao Costa Pereira Tufic Madi Filho Jose Roberto Berretta Carlos Henrique de Mesquita Nuclear and Energy Research Institute—IPEN/CNEN-SP Sao PauloBrazil

Scintillators are high-density luminescent materials that convert X-rays to visible light. Thallium doped cesium iodide (CsI:Tl) scintillation materials are widely used as converters for X-rays into visible light, with very high conversion efficiency of 64.000 optical photons/MeV. CsI:Tl crystals are commercially available, but, the possibility of developing these crystals into different geometric shapes, meeting the need for coupling the photosensor and reducing cost, makes this material very attractive for scientific research. The objective of this work was to study the feasibility of using radiation sensors, scintillators type, developed for use in imaging systems for X-rays. In this paper, the CsI:Tl scintillator crystal with nominal concentration of the 10-3 M was grown by the vertical Bridgman technique. The imaging performance of CsI:Tl scintillator was studied as a function of the design type and thickness, since it interferes with the light scattering and, hence, the detection efficiency plus final image resolution. The result of the diffraction X-ray analysis in the grown crystals was consistent with the pattern of a face-centered cubic (fcc) crystal structure. Slices 25 × 2 × 3 mm3 (length, thickness, height) of the crystal and mini crystals of 1 × 2 × 3 mm3 (length, thickness, height) were used for comparison in the imaging systems for X-rays. With these crystals scintillators, images of undesirable elements, such as metals in food packaging, were obtained. One-dimensional array of photodiodes and the photosensor CCD (Coupled Charge Device) component were used. In order to determine the ideal thickness of the slices of the scintillator crystal CsI:Tl, Monte Carlo method was used.

关键词： Crystal Growth Scintillator X-Ray Imaging Systems photodiodes Coupled Charge Device

Development of Low Dark Current SiGe Near-Infrared PIN Photodetectors on 300 mm Silicon Wafers

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Optics and Photonics Journal 2016年第5期6卷 61-68页

作者： Caitlin Rouse John W. Zeller Harry Efstathiadis Pradeep Haldar Jay S. Lewis Nibir K. Dhar Priyalal Wijewarnasuriya Yash R. Puri Ashok K. Sood State University of New York Polytechnic Institute Albany NY USA Magnolia Optical Technologies Inc. Woburn MA USA DARPA/MTO Arlington VA USA US Army Night Vision Sensors and Electronic Division Fort Belvoir VA USA US Army Research Laboratory Adelphi MD USA

SiGe offers a low-cost alternative to conventional infrared sensor material systems such as InGaAs, InSb, and HgCdTe for developing near-infrared (NIR) photodetector devices that do not require cooling and can operate with relatively low dark current. As a result of the significant difference in thermal expansion coefficients between germanium (Ge) and silicon (Si), tensile strain incorporated into SiGe detector devices through specialized growth processes can extend their NIR wavelength range of operation. We have utilized high throughput, large-area complementary metal-oxide semiconductor (CMOS) technology to fabricate Ge based p-i-n (PIN) detector devices on 300 mm Si wafers. The two-step device fabrication process, designed to effectively reduce the density of defects and dislocations arising during deposition that form recombination centers which can result in higher dark current, involves low temperature epitaxial deposition of Ge to form a thin p+ seed layer, followed by higher temperature deposition of a thicker Ge intrinsic layer. Phosphorus was then ion-implanted to create devices with n+ regions of various doping concentrations. Secondary ion mass spectroscopy (SIMS) has been utilized to determine the doping profiles and material compositions of the layers. In addition, electrical characterization of the I-V photoresponse of different devices from the same wafer with various n+ region doping concentrations has demonstrated low dark current levels (down to below 1 nA at -1 V bias) and comparatively high photocurrent at reverse biases, with optimal response for doping concentration of 5 × 1019 cm-3.

关键词： Photodetectors Infrared Detectors Germanium photodiodes Large-Area Wafers