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InGaN metal-insulator-semiconductor photodetector using Al2O3 as the insulator

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Science China Technological Sciences 2013年第3期56卷 633-636页

作者： ZHANG KaiXiao MA AiBin JIANG JingHua XU Yan TAI Fei GONG JiangFeng ZOU Hua ZHU WeiHua College of Science Hohai University College of Mechanics & Materials Hohai University

In this paper,an InGaN metal-insulator-semiconductor(MIS) photodetector with an ultra-thin Al2O3 insulation layer deposited by atomic layer deposition(ALD) was studied.A high photoelectric responsivity of 0.25 A/W and a spectral responsivity rejection ratio of about three orders of magnitude at 1 V reverse bias were achieved for this MIS *** dominant carrier transport mechanism in the InGaN MIS photodetectors is submitted to the space charge limited current(SCLC) mechanism at high field and exhibits an Ohmic-like conduction at low electric *** results indicate that the ultra-thin Al2O3 film deposited by the ALD technique can act as an excellent insulation dielectric for the InGaN photodetectors.

关键词： InGaN photodetector metal-insulator-semiconductor current transport

A novel PIN photodetector with double linear arrays for rainfall prediction

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Journal of Semiconductors 2015年第9期36卷 93-96页

作者：姚言刘雄袁立张兆华任天令 Integrated Micro/Nano Systems Laboratory Beijing Institute of Nanoenergy and NanosystemsChinese Academy of Sciences Institute of Microelectronics & Tsinghua National Laboratory for Information Science and Technology Tsinghua University

A novel PIN （positive-intrinsic-negative） photodetector with double linear arrays that can be used to measure the diameter of precipitation particles and the space between two droplets in clouds is proposed. The sensitive unit is the PIN photodiode. The chip with a size of 10 × 8 mm2 has 128 photodiodes, and each row has 64 photodiodes. The device design, fabrication process and package are introduced in the paper. The photocurrent of the packaged chip was systematically tested with a red laser. Also the diameter of one water drop and the space between two water drops were measured. The minimum raindrop diameter which can be tested in this paper is 100 μm. This device can be useful for rainfall prediction.

关键词： PIN photodetector double linear arrays rainfall prediction

Stability enhancement of lead-free CsSnI3 perovskite photodetector with reductive ascorbic acid additive

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InfoMat 2020年第3期2卷 577-584页

作者： Fengren Cao Wei Tian Meng Wang Min Wang Liang Li School of Physical Science and Technology Center for Energy Conversion Materials&Physics(CECMP)Jiangsu Key Laboratory of Thin FilmsSoochow UniversitySuzhouChina

Lead-free tin-based perovskites have attracted widespread research interestdue to their nontoxicity and potential commercialization. However, their practicalapplication is limited by high density of intrinsic defects and easy oxidationof Sn2+ in ambient environment. To address these issues, we demonstratean environment-friendly stable broadband photodetector based on CsSnI3perovskite with conventional SnF2 and reducing agent ascorbic acid *** optimizing the concentration of ascorbic acid, the optimal devicereveals high responsivity (0.257 A W−1), fast response speed (0.35/1.6 ms), andexcellent stability. The properties are comparable to most previously reportedlead-free perovskite photodetectors. The enhanced performance is mainlydue to the fact that ascorbic acid promotes the crystal growth, suppresses theformation of Sn4+, and makes it have good semiconductivity rather thanmetallicity.

关键词： CsSnI3 lead-free perovskite photodetector self-powered

A fully differential transimpedance amplifier with integrated differential photodetector in standard CMOS process for optical communications and interconnects

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Science China(Information Sciences) 2011年第6期54卷 1300-1311页

作者： YU ChangLiang , MAO LuHong, XIAO XinDong & ZHANG ShiLin School of Electronic Information Engineering, Tianjin University, Tianjin 300072, China School of Electronic Information Engineering Tianjin University Tianjin China

A fully differential transimpedance amplifier (TIA) with integrated differential photodetector in standard CMOS technologies has been realized for optical receivers in optical communications and optical interconnects. And a novel, fully differential photodetector aiming to convert the incident light into a pair of fully differential photo-generated currents and ensure the differential symmetry on circuit configuration and model has also been proposed for the differential TIA to achieve the fully differential characteristic. Theoretical analysis and simulation results both indicate that the fully differential TIA reaches a higher bandwidth than a conventional one and at the same time a doubled sensitivity. Based on this new TIA, a monolithic, fully differential optoelectronic integrated receiver was designed and implemented in a Chartered 3.3 V, 0.35 μm standard CMOS process. It demonstrates 98.75 dB transimpedance gain, and 0.334 μA equivalent input integrated referred noise current from 1 Hz up to 3 dB frequency. The power dissipation from a single 3.3 V supply is 100 mW for the TIA-LIA (limiting amplifier)-combination plus 138 mW for the 50 output buffer. At 850 nm wavelength, the optical receiver achieves a 1.1 GHz 3 dB bandwidth, and can handle bitrates up to 1.6 Gbit/s for 12.2 dBm peak-peak optical power and 2 31 1 PRBS (pseudorandom bit sequency) input signal.

关键词： transimpedance amplifier (TIA) photodetector CMOS optical receiver monolithic integrated circuits

Zero biased Ge-on-Si photodetector with a bandwidth of 4.72 GHz at 1550 nm

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Chinese Physics B 2009年第6期18卷 2542-2544页

作者：薛海韵薛春来成步文俞育德王启明 State Key Laboratory on Integrated Optoelectronics Institute of SemiconductorsChinese Academy of Sciences

High quality Ge was epitaxially grown on Si using ultrahigh vacuum/chemical vapor deposition （UHV/CVD）. This paper demonstrates efficient germanium-on-silicon p-i-n photodetectors with 0.8 μm Ge, with responsivities as high as 0.38 and 0.21 A/W at 1.31 and 1.55 μm, respectively. The dark current density is 0.37 mA/cm^2 and 29.4 mA/cm^2 at 0 V and a reverse bias of 0.5 V. The detector with a diameter of 30μm, a 3 dB-bandwidth of 4.72 GHz at an incident wavelength of 1550 nm and zero external bias has been measured. At a reverse bias of 3 V, the bandwidth is 6.28 GHz.

关键词： Si-based Ge epitaxy photodetector

Ultra-high photoresponsive photodetector based on ReS_(2)/SnS_(2)heterostructure

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中国物理B:英文版 2023年第9期32卷 545-551页

作者：王冰辉邢艳辉董晟园李嘉豪韩军涂华垚雷挺贺雯馨张宝顺曾中明 Key Laboratory of Opto-electronics Technology Ministry of EducationCollege of MicroelectronicsBeijing University of TechnologyBeijing 100124China Nanofabrication Facility Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesSuzhou 215123China

photodetectors based on two-dimensional materials have attracted much attention because of their unique structure and outstanding *** response speed of single ReS_(2)photodetector is slow exceptionally,the heterostructure could improves the response speed of ReS_(2)-based photodetector,but the photodetectors responsivity is reduced greatly,which restricts the development of ReS_(2).In this paper,a vertically structured ReS_(2)/SnS_(2)van der Waals heterostructure photodetectors is prepared,using ReS_(2)as the transport layer and SnS_(2)as the light absorbing layer to regulate the channel *** device has an ultra-high photoconductive gain of 10^(10),which exhibits an ultra-high responsivity of4706 A/W under 365-nm illumination and response speed in seconds,and has an ultra-high external quantum efficiency of1.602×10^(6)%and a high detectivity of 5.29×10^(12)*** study for ReS_(2)-based photodetector displays great potential for developing future optoelectronic devices.

关键词： two-dimensional material ReS_(2) heterostructure photodetector

Scalable manufacture of vertical p-GaN/n-SnO_(2) heterostructure for self-powered ultraviolet photodetector, solar cell and dual-color light emitting diode

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InfoMat 2021年第5期3卷 598-610页

作者： Longxing Su Yuqing Zuo Jin Xie School of Physical Science and Technology ShanghaiTech UniversityShanghaiChina

Vertical SnO_(2)based p-n junctions are pivotal since they built the core components in photoelectronic ***,preparation of high-quality p-SnO_(2)with controllable hole mobility and concentration is still a great challenge owing to the self-compensating effect and lattice distortion caused by the radius discrepancy between host and doped ***,p type GaN:Mg grown by metal organic chemical vapor deposition is employed as hole transportation layer to construct p-n heterojunction with intrinsic n-SnO_(2)prepared by atomic layer *** material preparation techniques are compatible with current industrial mass production *** p-GaN/n-SnO_(2)heterojunction can be developed as solar cell,dual-color light emitting diode and self-powered,high speed ultraviolet(UV)photodetector with external quantum efficiency of 74%at 0 V bias *** addition,direct recombination of donor bound excitons(D0 X)and UV emission red shifts caused by quantum confinement Stack effect are observed in SnO_(2).Since our device fabrication technique is a standard craft in photoelectronics,the study of p-GaN/n-SnO_(2)heterojunction suggests a simple and effective strategy for large scale device integration in next generation high performance photoelectronic devices.

关键词： heterostructure light emitting diode self-powered solar cell UV photodetector

Plasmon-enhanced photoresponse of deep-subwavelength GaAs NW photodetector

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Optoelectronics Letters 2021年第7期17卷 385-389页

作者：李邦唐燕妮颜鑫张霞刘永革 School of Computer&Information Engineering Anyang Normal UniversityAnyang 455000China Key Laboratory of Oracle Bone Inscriptions Information Processing Ministry of Education of ChinaAnyang 455000China Henan Key Laboratory of Oracle Bone Inscriptions Information Processing Anyang 455000China State Key Laboratory of Information Photonics and Optical Communications Beijing University of Posts and TelecommunicationsBeijing 100876China

According to optical diffraction limit, the photoresponsity of nanowire(NW)-based photodetector exponentially decreases when its NW diameter reduces to the range of deep subwavelength. In this paper, we demonstrate a photoresponse-enhanced method of the deep-subwavelength Ga As NW photodetector by using a plasmon-driven dipole antenna. Considering that the enhancement is extremely influenced by the shape and size of antenna, the structure of antenna is optimized by finite difference time domain(FDTD) solutions. The optimal structure of antenna optimizes the responsivity-enhanced factors to 1123.3 and 224.7 in NW photodetectors with NW diameters of 20 nm and 60 nm, respectively. This photoresponse-enhanced method is promising for easy-integration high-performance nanoscale photodetectors.

关键词： antenna photoresponse photodetector

Ultraviolet photodetector based on Au doped TiO_2 nanowires array with low dark current

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Optoelectronics Letters 2019年第2期15卷 81-84页

作者：张敏卡马勒.托克达尔汗张红燕李琳 School of Physics Science and Technology Xinjiang University

Au nanoparticles doped TiO_2 nanowires(NWs) arrays with an average diameter of 100 nm were synthesized through a facile solvothermal ***, metal/semiconductor/metal(MSM) structured detectors with Ag electrodes were fabricated on these *** ultraviolet(UV) sensing characteristics of pure TiO_2 and Au-doped ones(Au-TiO_2) were *** with pure TiO_2, the Au-TiO_2 NWs based device shows a much lower dark current of 1.5 nA at 3 V *** low dark current mechanism might be due to the promoted directional transmission of carriers induced by Au *** photoresponse is nearly one order of magnitude under 360 nm monochromatic *** Au-TiO_2 NWs detector with simple fabrication process, low noise and good overall performance provides a broad way in fabricating UV imaging arrays.

关键词： TiO Ultraviolet photodetector UV