Improving performance of ZnO Schottky photodetector by inserting MXenes modified-layer

作     者：Cheng Wu Xinzhi Luo Xiaoming Yu Xuan Yu Kun Lin Minghao Li Zhenhua Li Yu Cao Yingtang Zhou Cheng Wu;Xinzhi Luo;Xiaoming Yu;Xuan Yu;Kun Lin;Minghao Li;Zhenhua Li;Yu Cao;Yingtang Zhou

作者机构：School of Marine Engineering EquipmentZhejiang Ocean UniversityZhoushan 316022China National Engineering Research Center for Marine AquacultureZhejiang Ocean UniversityZhoushan 316022China School of Electrical EngineeringNortheast Electric Power UniversityJilin 132012China 

出 版 物：《Chinese Chemical Letters》 (中国化学快报（英文版）)

年 卷 期：2023年第34卷第7期

页      面：423-427页

核心收录：

学科分类：07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0803[工学-光学工程] 0702[理学-物理学] 

基　　金：support from Zhejiang Provincial Natural Science Foundation (No. LY19F050007) the National Natural Science Foundation of China (No. 11604298) Zhoushan Science and Technology Project (Nos. 2019C21029, 2019C21017) 

主　　题：MXenes Ti_(3)C_(2)T_(X) Schottky Photodetector Responsivity Normalized detectivity 

摘      要：The development of low-cost and high-performance ZnO Schottky photodetectors (PDs) has drawn intensive attention,but still a challenge due to their poor conductivity and low light utilization ***,we introduce Ti_(3)C_(2)T_(X) into ZnO films to fabricate Schottky UV PDs via facile spin-coated *** fabricated ZnO/Ti_(3)C_(2)T_(X)/ZnO compound film shows outstanding performance on photocurrent,responsivity,noise equivalent power (NEP),normalized detection rate (D~*),and linear dynamic region (LDR),compared with the original Zn O *** photocurrent is significantly increased by 466%,and the responsivity is improved by one order of *** addition,it exhibits relatively low NEP (5.99×10^(-11)W),strong D~*(2.53×10~9 Jones),and high LDR (28 dB).The superior performance is ascribed to the enhanced conductivity and light absorption of ZnO film after introduction of Ti_(3)C_(2)T_(X) modification layer,leading to simultaneously faster electron transfer,lower the radiation recombination of electron and holes on the ZnO/Ti_(3)C_(2)T_(X)/ZnO compound *** work provides a facile way to develop low-cost and highperformance ZnO Schottky PDs.