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High-performance self-powered photodetector based on organic/inorganic hybrid van der Waals heterojunction of rubrene/silicon

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Chinese Physics B 2021年第7期30卷 467-477页

作者：徐彦彩周荣尹钦李娇佀国翔张洪宾 School of Physics and Electronics Shandong Normal UniversityJinan 250014China

Organic/inorganic hybrid van der Waals heterostructure with an atomically abrupt interface has attracted great research interests within the field of multifunctional electronic and optoelectronic *** integration of organic rubrene films with inorganic Si semiconductors can avoid the atomic mutual-diffusion at the interface,and provide the possibility of forming two-dimensional van der Waals heterojunction accompanied with the type-II energy band alignment,due to the transfer behaviors of majority carriers at the *** this study,the high-quality rubrene/Si van der Waals heterostructure with an electronically abrupt junction was prepared,and a self-powered photodetector was then constructed based on this hybrid *** photodetector demonstrated an excellent switching response to the 1064 nm monochromatic light with large on/off current ratio of 7.0×10^(3),the maximum photocurrent of 14.62 m A,the maximum responsivity of 2.07 A/W,the maximum detectivity of 2.9×10^(11)Jones,and a fast response time of 13.0μ*** study offers important guidance for preparing high-quality rubrene/Si hybrid van der Waals heterostructure with desirable band alignment,and the designed heterojunction photodetector has an important application prospect in the field of multifunctional optoelectronics.

关键词： rubrene van der Waals heterojunction photodetector band alignment

Broadband photodetector of high quality Sb2S3 nanowire grown by chemical vapor deposition

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Journal of Materials Science & Technology 2021年第16期75卷 14-20页

作者： Kun Ye Bochong Wang Anmin Nie Kun Zhai Fusheng Wen Congpu Mu Zhisheng Zhao Jianyong Xiang Yongjun Tian Zhongyuan Liu Center for High Pressure Science State Key Laboratory of Metastable Materials Science & Technology Yanshan University Key Laboratory for Microstructural Material Physics of Hebei Province School of Science Yanshan University

Low dimensional semiconductors can be used for various electronic and optoelectronic devices because of their unique structure and property. In this work, one-dimensional SbSnanowires(NWs) with high crystallinity were grown via chemical vapor deposition(CVD) technique on SiO/Si substrates. The SbSNWs exhibited needle-like structures with inclined cross-sections. The lengths of SbSnanowires changed from 7 to 13 μm. The photodetection properties of SbSnanowires were comprehensively and systematically characterized. The SbSphotodetectors show a broadband photoresponse ranging from ultraviolet(360 nm) to near-infrared(785 nm). An excellent specific detectivity of 2.1 × 101~4 Jones, high external quantum efficiency of 1.5 × 10~4%, sensitivity of 2.2 × 104 cm~2 Wand short response time of less than 100 ms was achieved for the SbSNW photodetectors. Moreover, the SbSNWs showed outstanding switch cycling stability that was beneficial to the practical applications. The high-quality SbSnanowires fabricated by CVD have great application potential in semiconductor and optoelectronic fields.

关键词： Sb 2 S 3 nanowires photodetector Chemical Vapor Deposition

Performance Improvement of GaN Based Schottky Barrier Ultraviolet photodetector by Adding a Thin A1GaN Window Layer

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Chinese Physics Letters 2007年第6期24卷 1745-1748页

作者：周梅赵德刚 Department of Physics China Agriculture University Beijing 100083 State Key Laboratory on Integrated Optoelectronics Institute of Semiconductors Chinese Academy of Sciences PO Box 912 Beijing 100083

We propose a new structure of GaN based Schottky barrier ultraviolet photodetector, in which a thin n-type A1GaN window layer is added on the conventional n^--GaN/n^＋-GaN device structure. The performance of the Schottky barrier ultraviolet photodetector is found to be improved by the new structure. The simulation result shows that the new structure can reduce the negative effect of surface states on the performance of Schottky barrier GaN photodetectors, improving the quantum efficiency and decreasing the dark current. The investigations suggest that the new photodetector can exhibit a better responsivity by choosing a suitably high carrier concentration and thin thickness for the A1GaN window layer.

关键词： Performance Ultraviolet photodetector

Recent progress of ZnMgO ultraviolet photodetector

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Chinese Physics B 2017年第4期26卷 18-26页

作者：杨佳霖刘可为申德振 State Key Laboratory of Luminescence and Applications Changchun Institute of OpticsFine Mechanics and PhysicsChinese Academy of SciencesChangchun 130033China University of Chinese Academy of Sciences Beijing 100049China

The ultra-violet（UV） detection has a wide application in both civil and military *** is recognized as one of ideal materials for fabricating the UV photodetectors due to its plenty of advantages,such as wide bandgap,low cost,being environment-friendly,high radiation hardness,***,the alloying of ZnO with MgO to make ZnMgO could continually increase the band gap from ~ 3.3 eV to ~ 7.8 eV,which allows both solar blind and visible blind UV radiation to be *** is well known,ZnO is stabilized in the wurtzite structure,while MgO is stabilized in the rock salt *** a result,with increasing the Mg content,the crystal structure of ZnMgO alloy will change from wurtzite structure to rock salt ***,ZnMgO photodetectors can be divided into three types based on the structures of alloys,namely,wurtzite-phase,cubic-phase and mixed-phase *** this paper,we review recent development and make the prospect of three types of ZnMgO UV photodetectors.

关键词： ZnO ZnMgO UV photodetector

Enhanced near-infrared responsivity of silicon photodetector by the impurity photovoltaic effect

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Chinese Physics B 2015年第4期24卷 521-524页

作者：袁吉仁黄海宾邓新华梁晓军周耐根周浪 Institute of Photovoltaics Nanchang University School of Science Nanchang University

The near-infrared responsivity of a silicon photodetector employing the impurity photovoltaic （IPV） effect is investigated with a numerical method. The improvement of the responsivity can reach 0.358 A/W at a wavelength of about 1200 nm, and its corresponding quantum efficiency is 41.1%. The origin of the enhanced responsivity is attributed to the absorption of sub-bandgap photons, which results in the carrier transition from the impurity energy level to the conduction band. The results indicate that the IPV effect may provide a general approach to enhancing the responsivity of photodetectors.

关键词： impurity photovoltaic effect responsivity photodetector

Room-temperature operating extended short wavelength infrared photodetector based on interband transition of InAsSb/GaSb quantum well

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Chinese Physics B 2018年第4期27卷 396-400页

作者：孙令王禄鲁金蕾刘洁方俊谢莉莉郝智彪贾海强王文新陈弘 Key Laboratory for Renewable Energy Beijing Key Laboratory for New Energy Materials and Devices Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences Beijing 100190 China University of Chinese Academy of Sciences Beijing 100049 China Department of Electronic Engineering Tsinghua University Beijing 100084 China

Here in this paper,we report a room-temperature operating infrared photodetector based on the interband transition of an In As Sb/Ga Sb quantum *** interband transition energy of 5-nm thick In As（0.91）Sb（0.09） embedded in the Ga Sb barrier is calculated to be 0.53 e V（2.35μm）,which makes the absorption range of In As Sb cover an entire range from short-wavelength infrared to long-wavelength infrared *** fabricated photodetector exhibits a narrow response range from 2.0μm to 2.3μm with a peak around 2.1μm at 300 *** peak responsivity is 0.4 A/W under-500-m Vapplied bias voltage,corresponding to a peak quantum efficiency of 23.8%in the case without any anti-reflection *** 300 K,the photodetector exhibits a dark current density of 6.05×10^-3A/cm^2 under-400-m V applied bias voltage and 3.25×10^-5A/cm^2 under zero,*** peak detectivity is 6.91×10^10cm·Hz^1/2/W under zero bias voltage at 300 K.

关键词： InAsSb/GaSb quantum well interband transition photodetector room temperature operating

Van der Waals heterojunction ReSe_(2)/WSe_(2)polarization-resolved photodetector

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Journal of Semiconductors 2021年第3期42卷 45-49页

作者： Xiaoyu Tian Yushen Liu School of Mechanical and Electrical Engineering Soochow UniversitySuzhou 215137China School of Electronic and Information Engineering Changshu Institute of TechnologyChangshu 215556China

Polarization-resolved photodetectors,a significant branch of photodetection,can more effectively distinguish the target from the background by exploiting polarization-sensitive ***,due to the absence of intrinsic polarized absorption properties of many materials,there is still a great challenge to develop the high-performance polarization-resolved ***,we report a van der Waals heterojunction(vdWH)ReSe_(2)/WSe_(2)photodetector,which performs a high responsivity of~0.28 A/W and a high detectivity of 1.1×10^(12)Jones under the illumination of 520 nm laser at room ***,scanning photocurrent mapping(SPCM)measurements demonstrate the photoresponse of devices closely depend on the polarized angle of the incident light,indicating the effective polarized light *** work paves the way to develop high-performance polarization-resolved photodetectors based on two-dimensional(2D)materials.

关键词： ReSe_(2)/WSe_(2) photodetector polarization

Photon energy response optimization using few-channel spectroscopy dose method for Si-PIN photodetector applied in personal dose equivalent measurements

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Nuclear Science and Techniques 2020年第4期31卷 37-46页

作者： Ping Huang Shu-Qiong Li Run-Dong Yang Yun-Tian Sun Yong Yang Wu Gao National Institute of Measurement and Testing Technology Chengdu 610021China Sichuan Radiation Technology Co. LtdChengdu 610021China Institute of Microelectronics School of Computer S&TNorthwestern Polytechnical UniversityXi’an 710072China

Si-PIN photodetectors having features such as low cost,small size,low weight,low voltage,and low power consumption are widely used as radiation detectors in electronic personal dosimeters(EPDs).The technical parameters of EPDs based on the Si-PIN photodetectors include photon energy response(PER),angular response,inherent error,and dose rate *** them,PER is a key parameter for evaluation of EPD measurement *** present,owing to the limitations of volume,power consumption,and EPD cost,the PER is usually corrected by a combination of single-channel counting techniques and filtering material ***,the above-mentioned methods have problems such as poor PER and low measurement *** solve such problems,in this study,a 1024-channel spectrometry system using a Si-PIN photodetector was developed and fullspectrum measurement in the reference radiation fields was conducted for radiation *** measurement results using the few-channel spectroscopy dose method showed that the PER could be controlled within±14%and±2%under the conditions of two and three energy intervals,respectively,with different channel *** PER measured at 0°angle of radiation incidence meets the-29%to+67%requirements of IEC 61526:***,the channel number and counts-to-dose conversion factors formed in the experiment can be integrated into an EPD.

关键词： Electronic personal dosimeter Si-PIN photodetector Personal dose equivalent Photon energy response Few-channel spectroscopy dose method

Flexible and Reusable Non-woven Fabric photodetector Based on Polypyrrole/Crystal Violate Lactone for NIR Light Detection and Writing

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Advanced Fiber Materials 2020年第3期2卷 150-160页

作者： Shuangping Yang Daniel K.Macharia Sharjeel Ahmed Bo Zhu Qiuping Zhong Haifeng Wang Zhigang Chen State Key Laboratory for Modification of Chemical Fibers and Polymer Materials College of Materials Science and EngineeringDonghua UniversityShanghai 201620China

Rapid NIR light detection and/or writing has drawn much attention,but their practical applications have been limited by obtaining such NIR *** address this problem,we have developed a simple and versatile strategy to prepare a non-woven fabric *** blue non-woven fabric photodetector has been prepared by coating photo-thermochromic ink(including crystal violet lactone(CVL)as the thermo-sensitive dye,polypyrrole(PPy)nanospheres as the photothermal component and hydroxyethyl cellulose(HEC)as the polymer matrix)on white non-woven *** the blue fabric photodetector is irradiated by NIR(808-nm as model,0.75 W cm^(−2))laser,the discoloration occurs in 35 s,and higher laser intensity confers more rapid *** discoloration results from the photothermal effect of PPy which confers the elevation of temperature(>50℃)and then converts CVL to its leuco form(colorless).When the laser is turned off,the temperature drops to below the transition temperature(photodetector by 808 nm laser,and then they can be erased automatically under ambient conditions,with excellent cycling ***,this fabric photodetector may act as a new platform for rapid NIR light detection and writing.

关键词： Non-woven fabric photodetector Photothermal effects NIR light detection