Room-temperature operating extended short wavelength infrared photodetector based on interband transition of InAsSb/GaSb quantum well

作     者：Ling Sun Lu Wang Jin-Lei Lu Jie Liu Jun Fang Li-Li Xie Zhi-Biao Hao Hai-Qiang Jia Wen-Xin Wang Hong Chen 孙令;王禄;鲁金蕾;刘洁;方俊;谢莉莉;郝智彪;贾海强;王文新;陈弘

作者机构：Key Laboratory for Renewable Energy Beijing Key Laboratory for New Energy Materials and Devices Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences Beijing 100190 China University of Chinese Academy of Sciences Beijing 100049 China Department of Electronic Engineering Tsinghua University Beijing 100084 China 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2018年第27卷第4期

页      面：396-400页

核心收录：

学科分类：080901[工学-物理电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 081302[工学-建筑设计及其理论] 080401[工学-精密仪器及机械] 0804[工学-仪器科学与技术] 0805[工学-材料科学与工程（可授工学、理学学位）] 0813[工学-建筑学] 0704[理学-天文学] 0803[工学-光学工程] 

基　　金：Project supported by the National Natural Science Foundation of China(Grant No.11574362) 

主　　题：InAsSb/GaSb quantum well interband transition photodetector room temperature operating 

摘      要：Here in this paper,we report a room-temperature operating infrared photodetector based on the interband transition of an In As Sb/Ga Sb quantum *** interband transition energy of 5-nm thick In As（0.91）Sb（0.09） embedded in the Ga Sb barrier is calculated to be 0.53 e V（2.35μm）,which makes the absorption range of In As Sb cover an entire range from short-wavelength infrared to long-wavelength infrared *** fabricated photodetector exhibits a narrow response range from 2.0μm to 2.3μm with a peak around 2.1μm at 300 *** peak responsivity is 0.4 A/W under-500-m Vapplied bias voltage,corresponding to a peak quantum efficiency of 23.8%in the case without any anti-reflection *** 300 K,the photodetector exhibits a dark current density of 6.05×10^-3A/cm^2 under-400-m V applied bias voltage and 3.25×10^-5A/cm^2 under zero,*** peak detectivity is 6.91×10^10cm·Hz^1/2/W under zero bias voltage at 300 K.