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Fabrication of flexible reduced graphene oxide/Fe2O3 hollow nanospheres based on-chip micro-supercapacitors for integrated photodetecting applications

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Nano Research 2016年第2期9卷 424-434页

作者： Shaosong Gu Zheng Lou Ludong Li Zhaojun Chen Xiangdong Ma Guozhen Shen Department of Material Science and Engineering China University of Mining & Technology (Beijing) Beijing 100083 China State Key Laboratory for Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences Beijing 100083China College of Chemical Science and Engineering Qingdao University Qingdao 266071 China

Micro-supercapacitors （MSCs） as important on-chip micropower sources have attracted considerable attention because of their unique and advantageous design for optimized maximum functionality within a minimized sized chip and excellent mechanical flexibility/stability in miniaturized portable electronic device applications. In this work, we report a novel, high-performance flexible integrated on-chip MSC based on hybrid nanostructures of reduced graphene oxide/Fe2O3 hollow nanospheres using a microelectronic photo-lithography technology combined with plasma etching technique. The unique structural design for on-chip MSCs enables high-performance enhancements compared with graphene-only devices, exhibiting high specific capacitances of 11.57 F·cm^-3 at a scan rate of 200 mV·s^-1 and excellent rate capability and robust cycling stability with capacitance retention of 92.08% after 32,000 charge/discharge cycles. Moreover, the on-chip MSCs exhibit superior flexibility and outstanding stability even after repetition of charge/discharge cycles under different bending states. As-fabricated highly flexible on-chip MSCs can be easily integrated with CdS nanowire-based photodetectors to form a highly compacted photodetecting system, exhibiting comparable performance to devices driven by conventional external energy storage units.

关键词： Fe2O3 microsupercapacitor photodetector flexible

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Effective shape-controlled synthesis of gallium selenide nanosheets by vapor phase deposition

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Nano Research 2020年第2期13卷 557-563页

作者： Lilan Tan Qingbo Liu Yufeng Ding Xiaogang Lin Wei Hu Meng-Qiu Cai Hong Zhou School of Physics and Electronics Hunan University Changsha 410082China ey Laboratory of Optoelectronic Technology and System of the Education Ministry of ChinaCollege of Optoelectronic EngineeringChongging UniversityChongqing 400044Chna Synergetic Innovation Center for Quantum Effects and Applications(SICQEA) Hunan Normal UniversityChangsha 410081China

The controlled synthesis of large and uniform gallium selenide(GaSe)crystals is crucial for its various applications based on the attractive properties of this emerging *** this work,vapor phase growth of high-quality monolayer GaSe nanosheets with multiple shape and size is achieved by tuning the Ga/GaSe ratio in the precursor.A theoretical model based on density functional theory calculations and kinetic Wulff construction theory describe the observed shape evolution of the GaSe *** show that the Ga/Se ratio plays a critical role in the evolution of the domain shape and ***,the as-grown GaSe nanosheets show improved performance with photoresponse time less than 0.7 ms and responsibility up to 3,000 *** study presents a previously unexplored strategy for the controlled growth of two-dimensional(2D)GaSe nanosheets for promising applications in next-generation optoelectronics.

关键词： galliurm selenide shape-evolution controllable growth photodetector growth dynamics

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Toward high-performance two-dimensional black phosphorus electronic and optoelectronic devices

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Chinese Physics B 2017年第3期26卷 137-147页

作者：李学飞熊雄吴燕庆 Wuhan National High Magnetic Field Center and School of Electrical and Electronic Engineering Huazhong University of Science and Technology Wuhan 430074 China Wuhan National High Magnetic Field Center and School of Optical and Electronic Information Huazhong University of Science and Technology Wuhan 430074 China

Recently, black phosphorus （BP） has joined the two-dimensional material family as a promising candidate for elec- tronic and photonic applications due to its moderate bandgap, high carrier mobility, and unusual in-plane anisotropy. Here, we review recent progress in BP-based devices, such as field-effect transistors, contact resistance, quantum transport, stabil- ity, photodetector, heterostructure, and in-plane anisotropy. We also give our perspectives on future BP research directions.

关键词： black phosphorus transistors mobility photodetector

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Van der Waals epitaxy of ultrathin crystalline PbTe nanosheets with high near-infrared photoelectric response

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Nano Research 2021年第6期14卷 1955-1960页

作者： Xinxin Zhao Qing Yin Hao Huang Qiang Yu Bo Liu Jie Yang Zhuo Dong Zhenjiang Shen Benpeng Zhu Lei Liao Kai Zhang School of Nano-Tech and Nano-Bionics University of Science and Technology of ChinaHefei230026China Nano Science and Technology Institute University of Science and Technology of ChinaSuzhou215123China Key Laboratory of Nanodevices and Applications i-LabSuzhou Institute of Nano-Tech and Nano-Bionics(SINANO)Chinese Academy of SciencesSuzhou215123China School of Physics and Technology Wuhan UniversityWuhan430072China The Institute of Scientific and Industrial Research Osaka UniversityOsaka567-0047Japan College of Physics and Electronic Engineering Hainan Normal UniversityHaikou571158China School of Optical and Electronic Information Wuhan National Laboratory for OptoelectronicsHuazhong University of Science and TechnologyWuhan430074China

Lead telluride(PbTe)is one of the reliable candidates for infrared(IR)optoelectronics with optimum band-gap as well as excellent photoelectric *** interests had been paid on the growth and device applications with PbTe for the development of high-performance IR photodetectors especially those working in the near-infrared *** a great deal of effort had been made to prepare PbTe nanostructures for miniaturized detectors,it is difficult to synthesize high-quality two-dimensional(2D)PbTe crystals due to its rock-salt non-layered ***,a facile strategy for controllable synthesis of ultrathin crystalline PbTe nanosheets by van der Waals epitaxy is *** an optimized growth temperature,which determines the morphology transit from triangular pyramid islands to regular square 2D planars,PbTe nanosheets in lateral size of tens of microns with thickness down to~7 nm are ***,ultrasensitive near-infrared detectors(NIRDs)based on the as-grown 2D PbTe nanosheets have been demonstrated with an ultrahigh responsivity exceeding 3,847 A/W at the wavelength of 1,550 nm under room *** approach demonstrates that 2D PbTe nanosheets have great latent capacity of developing high-performance miniaturized IR optoelectronic devices.

关键词： two-dimensional materials van der Waals epitaxy lead telluride near-infrared photodetector

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Highly stable lead-free Cs3Bi2I9 perovskite nanoplates for photodetection applications

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Nano Research 2019年第8期12卷 1894-1899页

作者： Zhaoyang Qi Xianwei Fu Tiefeng Yang Dong Li Peng Fan Honglai Li Feng Jiang Lihui Li Ziyu Luo Xiujuan Zhuang Anlian Pan Key Laboratory for Micro-Nano Physics and Technology of Hunan Province College of Materials and EngineeringSchool of Physics and Electronic Scienceand State Key Laboratory of Chemo/Biosensing and ChemometricsHunan UniversityChangsha 410082China

Lead halide perovskites have received tremendous attentions recently for their excellent properties such as high light absorption coefficient and long charge carrier diffusion length. However, the stability issues and the existence of toxic lead cations have largely limited their applications in optoelectronic area. Herein, we report the synthesis and investigation of highly stable and lead-free Cs3Bi2I9 perovskite nanoplates for visible light photodetection applications. The Cs3Bi2I9 nanoplates were synthesized through a facile solution-processed method, which is also applicable to various substrates. The achieved nanoplates present very good crystal quality and exhibit excellent long-term stability even exposed in moist air for several months. photodetectors were constructed based on these high-quality perovskite nanoplates for the first time, and display a maximum photoresponsivity of 33.1 mA/W under the illumination of 450 nm laser, which is six times higher than the solution-synthesized CH3NH3PbI3 nanowire photodetectors. The specific detectivity of these devices can reach up to 10^10 Jones. Additionally, the devices exhibit fast rise and decay time of 10.2 and 37.2 ms, respectively, and highly stable photoswitching behavior with their photoresponse well retaining under alternating light and darkness. This work opens up a new opportunity for stable and low-toxic perovskite-based optoelectronic applications.

关键词： bismuth inorganic perovskite lead-free highly stable nanoplates photodetector

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Efficient passivation of monolayer MoS2 by epitaxially grown 2D organic crystals

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Science Bulletin 2019年第22期64卷 1700-1706页

作者： Xin Xu Zefeng Chen Beilei Sun Yu Zhao Li Tao Jian-Bin Xu Department of Electronic Engineering The Chinese University of Hong KongHong KongChina Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter School of Material and EnergyGuangdong University of TechnologyGuangzhou 510006China

Monolayer molybdenum disulfide(Mo S2)is considered to be a promising candidate for field-effect transistors and photodetectors due to its direct bandgap and atomically thin ***,the Mo S2devices are impeded by the intrinsic surface defects and environmental adsorption such as H2O and ***,we demonstrated a highly ordered,ultrathin(photodetector made on Mo S2after passivation has a much faster response speed(from 3 s to 10 ms)without significant sacrifice of the *** method provides a facile approach to realize high-performance two-dimensional electronic and optoelectronic devices.

关键词： Molybdenum disulfide Filed-effect transistor photodetector Passivation

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A low-noise, high-SNR balanced homodyne detector for the bright squeezed state measurement in 1–100 kHz range

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Chinese Physics B 2020年第3期29卷 215-220页

作者：王锦荣王庆伟田龙苏静郑耀辉 State Key Laboratory of Quantum Optics and Quantum Optics Devices Institute of Opto-ElectronicsShanxi UniversityTaiyuan 030006China Collaborative Innovation Center of Extreme Optics Shanxi UniversityTaiyuan 030006China

We report a low-noise, high-signal-to-noise-ratio(SNR) balanced homodyne detector based on the standard transimpedance amplifier circuit and the inductance and capacitance combination for the measurement of the bright squeezed state in the range from 1 kHz to 100 kHz. A capacitance is mounted at the input end of the AC branch to prevent the DC photocurrent from entering the AC branch and avoid AC branch saturation. By adding a switch at the DC branch,the DC branch can be flexibly turned on and off on different occasions. When the switch is on, the DC output provides a monitor signal for laser beam alignment. When the switch is off, the electronic noise of the AC branch is greatly reduced at audio-frequency band due to immunity to the impedance of the DC branch, hence the SNR of the AC branch is significantly improved. As a result, the electronic noise of the AC branch is close to -125 dBm, and the maximum SNR of the AC branch is 48 dB with the incident power of 8 mW in the range from 1 kHz to 100 kHz. The developed photodetector paves a path for measuring the bright squeezed state at audio-frequency band.

关键词： quantum optics photodetector low-noise audio band

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Gate-dependent photoresponse in self-assembled graphene p–n junctions

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Chinese Physics B 2015年第6期24卷 603-606页

作者：尹伟红王玉冰韩勤杨晓红 State Key Laboratory on Integrated Optoelectronics Institute of SemiconductorsChinese Academy of Science

The intrinsic photocurrent generation mechanism of a self-assembled graphene p-n junction operating at 1.55 ~tm is investigated experimentally. It is concluded that both a photovoltage effect and a photothermoelectric effect contribute to the final photocurrent. The photocurrent signal at the p-n junction was found to be dominated by photothermoelectric current, arising from different self-assembled doping levels.

关键词： graphene photodetector photovoltage photothermoelectric

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Observation of ambipolar photoresponse from 2D MoS_(2)/MXene heterostructure

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Nano Research 2021年第10期14卷 3416-3422页

作者： Juntong Zhu Hao Wang Liang Ma Guifu Zou College of Energy Soochow Institute for Energy and Materials Innovationsand Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu ProvinceSoochow UniversitySuzhou 215006China Research Institute of Superconductor Electronics Nanjing UniversityNanjing 210023China School of Physical Sciences University of Chinese Academy of SciencesBeijing 100190China

Two-dimensional materials have been demonstrated as promising toolboxes for *** metal carbides and nitrides(MXenes),members of an emerging family of two-dimensional materials,have drawn extensive attention in optoelectronics owing to their excellent conductivity and tunable electronic ***,a photodetector based on the two-dimensional van der Waals heterostructure of Ti_(3)C_(2)T_(x)MXene and a MoS_(2)monolayer was constructed to observe the ambipolar photoresponse,which showed a positive photoresponse in the visible spectrum(500-700 nm)and a negative photoresponse at longer wavelengths(700-800 nm).The device exhibited a high negative responsivity of 1.9 A/W and a detectivity of 2.1×10^(10)Jones under 750 nm light *** experiments demonstrate that the negative photoresponse arises from the heterostructureinduced trap energy level,which confines the excited photoelectrons and leads to an inverse *** work demonstrates a unique optoelectronic phenomenon in MoS_(2)/MXene heterostructures and provides valuable insights into the development of new photodetection materials.

关键词： MXene MoS_(2) two-dimensional heterostructure photodetector ambipolar photoresponse

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Intrinsic carrier multiplication in layered Bi_(2)O_(2)Se avalanche photodiodes with gain bandwidth product exceeding 1 GHz

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Nano Research 2021年第6期14卷 1961-1966页

作者： Vinod K.Sangwan Joohoon Kang David Lam J.Tyler Gish Spencer A.Wells Jan Luxa James P.Male GJeffrey Snyder Zdenek Sofer Mark C.Hersam Department of Materials Science and Engineering Northwestern UniversityEvanstonIL60208USA Department of Inorganic Chemistry University of Chemistry and Technology PragueTechnicka 516628Prague 6Czech Republic Department of Chemistry Northwestern UniversityEvanstonIL60208USA Department of Electrical and Computer Engineering Northwestern UniversityEvanstonIL60208USA

Emerging layered semiconductors present multiple advantages for optoelectronic technologies including high carrier mobilities,strong light-matter interactions,and tunable optical absorption and ***,metal-semiconductor-metal avalanche photodiodes(APDs)are fabricated from Bi2O2Se crystals,which consist of electrostatically bound[Bi2O2]2+and[Se]2−*** resulting APDs possess an intrinsic carrier multiplication factor up to 400 at 7 K with a responsivity gain exceeding 3,000 A/W and bandwidth of~400 kHz at a visible wavelength of 515.6 nm,ultimately resulting in a gain bandwidth product exceeding 1 *** to exceptionally low dark currents,Bi2O2Se APDs also yield high detectivities up to 4.6×1014 Jones.A systematic analysis of the photocurrent temperature and bias dependence reveals that the carrier multiplication process in Bi2O2Se APDs is consistent with a reverse biased Schottky diode model with a barrier height of~44 meV,in contrast to the charge trapping extrinsic gain mechanism that dominates most layered semiconductor *** this manner,layered Bi2O2Se APDs provide a unique platform that can be exploited in a diverse range of high-performance photodetector applications.

关键词： layered semiconductor photodetector high-frequency Schottky diode impact ionization

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