Gate-dependent photoresponse in self-assembled graphene p–n junctions

作     者：尹伟红 王玉冰 韩勤 杨晓红 

作者机构：State Key Laboratory on Integrated OptoelectronicsInstitute of SemiconductorsChinese Academy of Science 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2015年第24卷第6期

页      面：603-606页

核心收录：

学科分类：081704[工学-应用化学] 07[理学] 08[工学] 0817[工学-化学工程与技术] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0704[理学-天文学] 070301[理学-无机化学] 

基　　金：Project supported by the High Technology Research and Development Program of China(Grant No.2013AA031401) the National Natural Science Foundation of China(Grant Nos.61176053,61274069,and 61435002) the National Basic Research Program,China(Grant No.2012CB933503) 

主　　题：graphene photodetector photovoltage photothermoelectric 

摘      要：The intrinsic photocurrent generation mechanism of a self-assembled graphene p-n junction operating at 1.55 ~tm is investigated experimentally. It is concluded that both a photovoltage effect and a photothermoelectric effect contribute to the final photocurrent. The photocurrent signal at the p-n junction was found to be dominated by photothermoelectric current, arising from different self-assembled doping levels.