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High-performance photodetectors based on two-dimensional perovskite crystals with alternating interlayer cations

Journal of Materiomics 2023年第4期9卷 817-823页

作者： Yezhan Li Zhengxun Lai You Meng Wei Wang Yuxuan Zhang Xuwen Zhao Di Yin Weijun Wang Pengshan Xie Quan Quan SenPo Yip Johnny C.Ho Department of Materials Science and Engineering City University of Hong Kong999077Hong Kong SARChina Institute for Materials Chemistry and Engineering Kyushu UniversityFukuoka816-8580Japan State Key Laboratory of Terahertz and Millimeter Waves City University of Hong Kong999077Hong Kong SARChina

Organic-inorganic halide perovskite,as a low-cost,solution-processable material with remarkable optoelectronic properties,is ideal candidate to fabricate high-performance photodetectors and is expected to significantly reduce device *** to the common Dion-Jacobson and Ruddlesden-Popper two-dimensional(2D)layered hybrid perovskite compounds,the perovskites with alternating cations in the interlayer(ACI)phase show higher crystal symmetry and narrower optical bandgaps,which exhibit great potential for excellent photodetection ***,we report a high-performance photodetector based on the 2D bilayered hybrid lead halide perovskite single crystal with the ACI phase(GAMA_(2)Pb_(2)I_(7);GA=C(NH_(2))_(3)and MA=CH_(3)NH_(3)).The single-crystal photodetector exhibits high photoresponsivity of 1.56,2.54,and 2.60 A/W for incident light wavelengths of 405,532,and 635 nm under 9.82 nW,respectively,together with the correspondingly high detectivity values of 1.86×10^(12),3.04×10^(12),and 3.11×10^(12)Jones under the same operating ***,a high-resolution imaging sensor is built based on the GAMA_(2)Pb_(2)I_(7)single-crystal photodetector,confirming the high stability and photosensitivity of the imaging *** results show that the 2D hybrid lead halide perovskites with alternating interlayer cations are promising for high-performance visible light photodetectors and imaging systems.

关键词： photodetector Two-dimensional Hybrid perovskite Alternating interlayer cation Imaging

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photodetectors based on junctions of two-dimensional transition metal dichalcogenides

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Chinese Physics B 2017年第3期26卷 174-188页

作者：魏侠闫法光申超吕全山王开友 State Key Laboratory of Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences College of Materials Science and Opto-Electronic Technology University of Chinese Academy of Science

Transition metal dichalcogenides （TMDCs） have gained considerable attention because of their novel properties and great potential applications. The flakes of TMDCs not only have great light absorption from visible to near infrared, but also can be stacked together regardless of lattice mismatch like other two-dimensional （2D） materials. Along with the studies on intrinsic properties of TMDCs, the junctions based on TMDCs become more and more important in applications of photodetection. The junctions have shown many exciting possibilities to fully combine the advantages of TMDCs, other 2D materials, conventional and organic semiconductors together. Early studies have greatly enriched the application of TMDCs in photodetection. In this review, we investigate the efforts in photodetectors based on the junctions of TMDCs and analyze the properties of those photodetectors. Homojunctions based on TMDCs can be made by surface chemical doping, elemental doping and electrostatic gating. Heterojunction formed between TMDCs/2D materials, TMDCs/conventional semiconductors and TMDCs/organic semiconductor also deserve more attentions. We also compare the advantages and disadvantages of different junctions, and then give the prospects for the development of junctions based on TMDCs.

关键词： transition metal dichalcogenides homojunction heterojunction photodetector

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温度诱导的梯度锡-铅基混合卤素钙钛矿光电探测器

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Science China Materials 2023年第12期66卷 4697-4703页

作者：刘连松曹风人边刘康王孟孙浩轩李亮 School of Physical Science and Technology Center for Energy Conversion Materials&Physics(CECMP)Jiangsu Key Laboratory of Thin FilmsSoochow UniversitySuzhou 215006China

无机锡(Sn)–铅(Pb)基混合卤素钙钛矿由于其宽的响应波长范围和高的热稳定性,比有机–无机复合铅基卤素钙钛矿更具有吸引力.为了进一步提高Sn–Pb基混合卤素钙钛矿器件的性能,有必要进一步操纵载流子分离和复合.本文提出了一种基于梯度... 详细信息

无机锡(Sn)–铅(Pb)基混合卤素钙钛矿由于其宽的响应波长范围和高的热稳定性,比有机–无机复合铅基卤素钙钛矿更具有吸引力.为了进一步提高Sn–Pb基混合卤素钙钛矿器件的性能,有必要进一步操纵载流子分离和复合.本文提出了一种基于梯度无机CsPb_(0.7)Sn_(0.3)I3的自驱动光电探测器.通过调节退火温度优化CsPb_(0.7)Sn_(0.3)I3基钙钛矿膜中Sn和Pb梯度分布的程度,最终,最优的梯度钙钛矿器件表现出高的响应度(0.18 A W^(−1)),大的比探测率(2.5×10^(12)Jones),和快的响应速率(58.9/42μs),与之前报道的大多数Sn–Pb混合或纯Sn钙钛矿光电探测器性能相当.器件性能的提高主要归因于梯度分布诱导的能带弯曲促进了光生载流子的分离和传输.

关键词： tin-lead halide perovskite gradient photodetector

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QUANTUM MECHANICAL MODEL AND SIMULATION OF GaAs/AlGaAs QUANTUM WELL INFRARED PHOTO-DETECTOR-ⅠOPTICAL ASPECTS

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红外与毫米波学报 2002年第6期21卷 321-326页

作者： Fu Y Willander M Li Ning Lu W Physical Electronics and Photonics Microtechnology Center at ChalmersDepartment of Microelectronics and NanoscienceChalmers University of TechnologyFysikgrand 3S-412 96 GothenburgSweden National Laboratory for Infrared Physics Shanghai Institute of Tec hnical PhysicsChinese Academy of Sciences500 YuTian RoadShanghai 200083China

A complete quantum mechanical model for GaAs?AlGaAs quantum well infrared photodetectors(QWIPs) is presented here. The model consisted of four parts: (1) Starting with the description of the electromagnetic field of the infrared radiation in the QWIP, effective component of the vector potential along the QWIP growth direction ( z axis) due to the optical diffraction grating was calculated. (2) From the wave transmissions and the occupations of the electronic states, it was discussed that the dark current in the QWIP is determined by the drift diffusion current of carriers thermally excited from the ground sublevel in the quantum well to extended states above the barrier. (3) The photocurrent was investigated by the optical transition (absorption coefficient between the ground state to excited states due to the nonzero ). (4) By studying the inter diffusion of the Al atoms across the GaAs?AlGaAs heterointerfaces,the mobility of the drift diffusion carriers in the excited states was calculated, so the measurement results of the dark current and photocurrent spectra can be explained theoretically. With the complete quantum mechanical descriptions of (1 4), QWIP device design and optimization are possible.

关键词： GaAs/AlGaAs photodetector quantum well infrared photodetector(QWIP) quantum mechanical model

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Materials and devices for flexible and stretchable photodetectors and light-emitting diodes

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Nano Research 2021年第9期14卷 2919-2937页

作者： Jun-Kyul Song Min Sung Kim Seungwon Yoo Ja Hoon Koo Dae-Hyeong Kim Center for Nanoparticle Research Institute for Basic Science(IBS)Seoul 08826Republic of Korea School of Chemical and Biological Engineering and Institute of Chemical Processes Seoul National UniversitySeoul 08826Republic of Korea Interdisciplinary Program for Bioengineering Seoul National UniversitySeoul 08826Republic of Korea Department of Materials Science and Engineering Seoul National UniversitySeoul 08826Republic of Korea

Recently,significant efforts have been directed at overcoming the limitations of conventional rigid optoelectronic devices,particularly their poor mechanical stability under bending,folding,and stretching *** of major approaches for rendering optoelectronic devices mechanically deformable is to replace the conventional electronic/optoelectronic materials with functional nanomaterials or organic materials that are intrinsically flexible/***,advanced device designs and unconventional fabrication methods have also contributed to the development of soft optoelectronic ***,new devices such as bio-inspired curved image sensors,wearable light emitting devices,and deformable bio-integrated optoelectronic devices have been *** this review,recent progress in the development of soft optoelectronic materials and devices is ***,various materials such as nanomaterials,organic materials,and their hybrids that are suitable for developing deformable photodetectors,are ***,the nanomaterials and organic/polymeric materials that are applicable in deformable light-emitting diodes are ***,representative system-level applications of flexible and stretchable photodetectors and light-emitting diodes are reviewed,and future prospects are discussed.

关键词： nanomaterial organic material photodetector light-emitting diode flexible optoelectronics stretchable optoelectronics

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High performance solar-blind deep ultraviolet photodetectors viaβ-phase(In_(0.09)Ga_(0.91))_(2)O_(3)single crystalline film

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中国物理B:英文版 2023年第9期32卷 559-565页

作者：王必成汤梓荧郑湖颖王立胜王亚琪王润晨丘志仁朱海 State Key Laboratory of Optoelectronic Materials and Technologies School of PhysicsSun Yat-Sen UniversityGuangzhou 510275China Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices School of PhysicsSun Yat-sen UniversityGuangzhou 510275China

We successfully fabricate a high performanceβ-phase(In_(0.09)Ga_(0.91))_(2)O_(3)single-crystalline film deep ultraviolet(DUV)solar-blind *** 2-inches high crystalline quality film is hetero-grown on the sapphire substrates using the plasma-assisted molecular beam epitaxy(PA-MBE).The smooth InGaO single crystalline film is used to construct the solar-blind DUV detector,which utilized an interdigitated Ti/Au electrode with a metal-semiconductor-metal *** device exhibits a low dark current of 40 pA(0 V),while its UV photon responsivity exceeds 450 A/W(50 V)at the peak wavelength of 232 nm with illumination intensity of 0.21 m W/cm^(2)and the UV/VIS rejection ratio(R232 nm/R380 nm)exceeds 4×10^(4).Furthermore,the devices demonstrate ultrafast transient characteristics for DUV signals,with fast-rising and fast-falling times of 80 ns and 420 ns,*** excellent temporal dynamic behavior can be attributed to indium doping can adjust the electronic structure of Ga_(2)O_(3)alloys to enhance the performance of InGaO solar-blind ***,a two-dimensional DUV scanning image is captured using the InGaO photodetector as a sensor in an imaging *** results pave the way for future applications of two-dimensional array DUV photodetectors based on the large-scale InGaO heteroepitaxially grown alloy wide bandgap semiconductor films.

关键词： deep ultraviolet film photodetector heteroepitaxy

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Preparation of Ga_2O_3 thin film solar-blind photodetectors based on mixed-phase structure by pulsed laser deposition

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Chinese Physics B 2019年第1期28卷 171-177页

作者：吕有明李超陈相和韩瞬曹培江贾芳曾玉祥刘新科许望颖柳文军朱德亮 College of Materials Science and Engineering Shenzhen Key Laboratory of Special Functional MaterialsShenzhen Engineering Laboratory for Advanced Technology of CeramicsGuangdong Research Center for Interfacial Engineering of Functional MaterialsShenzhen UniversityShenzhen 518060China

Gallium oxide(Ga_2O_3) thin films were deposited on a-Al2O3(1120) substrates by pulsed laser deposition(PLD) with different oxygen pressures at 650?C. By reducing the oxygen pressure, mixed-phase Ga_2O_3 films with α and β phases can be obtained, and on the basis of this, mixed-phase Ga_2O_3 thin film solar-blind photodetectors(SBPDs) were *** the responsivities of the mixed-phase Ga_2O_3 SBPDs and the single β-Ga_2O_3 SBPDs at a bias voltage of 25 V,it is found that the former has a maximum responsivity of approximately 12 A/W, which is approximately two orders of magnitude larger than that of the latter. This result shows that the mixed-phase structure of Ga_2O_3 thin films can be used to prepare high-responsivity SBPDs. Moreover, the cause of this phenomenon was investigated, which will provide a feasible way to improve the responsivity of Ga_2O_3 thin film SBPDs.

关键词： Ga2O3 mixed-phase solar-blind photodetector pulsed laser deposition

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TiO^(2)electron transport bilayer for all-inorganic perovskite photodetectors with remarkably improved UV stability toward imaging applications

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Journal of Materials Science & Technology 2021年第16期75卷 39-47页

作者： Ye Yuan Zhong Jia Genghua Yan Zhuowei Li Jinliang Li Min Kuang Bangqi Jiang Longlong Zeng Likun Pan Wenjie Mai Siyuan Laboratory Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy MaterialsDepartment of PhysicsJinan UniversityGuangzhouGuangdong 510632China Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications Jinan University.GuangzhouGuangdong 510632China Shanghai Key Laboratory of Magnetic Resonance School of Physics and Electronic ScienceEast China Normal University3663 N.Zhongshan Rd.Shanghai200062China Guangdong Institute of New Materials Guangdong Academy of SciencesGuangzhou510650China Institute of Solar Energy Systems Guangdong Provincial Key Laboratory of Photovoltaic TechnologySchool of PhysicsSun Yat-sen UniversityGuangzhou510006China

High ultraviolet(UV)stability and low dark current(Idark)are necessary for high-quality perovskite photodetectors(PDs).TiO^(2)thin film is known as effective electron-transport-layer(ETL)for perovskite ***,common spin-coated TiO^(2)ETLs endow many surface defects and have strong UV photocatalytic effect to decompose perovskite materials,resulting in inferior stability of *** this work,TiO^(2)bilayer film(Bi-TiO^(2))has been fabricated by combining spin-coating and atomic-layer-deposition process and its positive effects on UV stability and Idarkof Cs2 AgBiBr6-based PDs have been revealed for the first *** is demonstrated that Bi-TiO^(2)possesses fewer surface defects and smoother morphology with type II band alignment,which is beneficial to suppress photocatalytic activity of TiO^(2)and reduce carrier recombination at the *** accelerated strong UV aging treatment,the PD with Bi-TiO^(2)maintains excellent performance,whereas the PD with spin-coated TiO^(2)film dramatically deteriorate with on-off ratio drops from~102 to~***,the Idarkof PD remarkably decreases from~10^(-8) A to~10^(-10) A after bilayer ***,we have integrated the corresponding PDs into a self-built imaging system adopting diffuse reflection *** work suggests a feasible approach to fabricate TiO^(2)/Cs2 AgBiBr6-based PDs with remarkable UV tolerance for imaging applications.

关键词： TiO_(2)bilayer film All-Iinorganic perovskite photodetector UV stability Atomic-layer-deposition Reflective imaging

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High-performance UV-vis photodetectors based on electrospun ZnO nanofiber-solution processed perovskite hybrid structures

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Nano Research 2017年第7期10卷 2244-2256页

作者： Fengren Cao Wei Tian Bangkai Gu Yulong Ma Hao Lu Liang Li College of Physics Optoelectronics and Energy Collaborative Innovation Center of Suzhou Nano Science and Technology Jiangsu Key Laboratory of Thin Films Center for Energy Conversion Materials & Physics (CECMP) Soochow University Suzhou 215006 China

Hybrid organic-inorganic perovskites have been demonstrated as promising candidates for broadband-responsive photodetectors. It is critical to develop perovskite-based photodetectors with excellent photodetection capability and facile fabrication processes for practical application. Herein, we designed and fabricated, for the first time, a hybrid photodetector consisting of electrospun ZnO nanofibers and perovskites. Compared to pristine ZnO or perovskite, the hybrid photodetector showed increased on-off ratio, faster response speed, and higher responsivity and detectivity. The performance of the hybrid devices was significantly enhanced by using quasi-aligned ZnO nanofiber arrays instead of disordered nanofibers, which provide efficient charge transfer between the perovskite and ZnO, shorter transmission paths, and reduced carrier loss at cross-junctions of nanofibers. Our results provide a new and promising route to integrate inorganic functional materials with perovskite for high-performance and low-cost photodetectors.

关键词： ZnO perovskite hybrid electrospinning photodetector

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Graphene integrated photodetectors and opto-electronic devices — a review

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Chinese Physics B 2017年第3期26卷 39-47页

作者：王肖沐甘雪涛 School of Electronic Science and Engineering Nanjing University School of Science Northwestern Polytechnical University

Graphene and other two-dimensional materials have recently emerged as promising candidates for next-generation, high-performance photonics. In this paper, the progress of research into photodetectors and other electro-optical devices based on graphene integrated silicon photonics is briefly reviewed. We discuss the performance metrics, photo-response mechanisms, and experimental results of the latest graphene photodetectors integrated with silicon photonics, We also lay out the unavoidable performance trade-offs in meeting the requirements of various applications. In addition, we describe other opto-electronic devices based on this idea. Integrating two-dimensional materials with a silicon platform provides new opportunities in advanced integrated photonics.

关键词： two-dimensional materials photodetector integrated photonics

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