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On the role of piezoelectricity in phonon properties and thermal conductivity of GaN nanofilms

Theoretical & Applied Mechanics Letters 2016年第6期6卷 277-281页

作者： Linli Zhu Haonan Luo Department of Engineering Mechanics and Key Laboratory of Soft Machines and Smart Devices of Zhejiang Province Zhejiang University

The effect of piezoelectricity on phonon properties and thermal conductivity of gallium nitride （GaN） nanofilms is theoretically investigated. The elasticity model is utilized to derive the phonon properties in spatially confined GaN nanofilms. The piezoelectric constitutive relation in GaN nanofilms is taken into account in calculating the phonon dispersion relation. The modified phonon group velocity and phonon density of state as well as the phonon thermal conductivity are also obtained due to the contribution of piezoelectricity. Theoretical results show that the piezoelectricity in GaN nanofilms can change significantly the phonon properties such as the phonon group velocity and density of states, resulting in the variation of the phonon thermal conductivity of GaN nanofilms remarkably. Moreover, the piezoelectricity of GaN can modify the dependence of thermal conductivity on the geometrical size and temperature. These results can be useful in modeling the thermal performance in the active region of GaN-based electronic devices.

关键词： GaN nanofilm phonon properties Elastic model Piezoelectricity phonon thermal conductivity

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Electron–acoustic phonon interaction and mobility in stressed rectangular silicon nanowires

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Chinese Physics B 2015年第1期24卷 411-417页

作者：朱林利 Department of Engineering Mechanics School of Aeronautics and Astronautics Zhejiang University

We investigate the effects of pre-stress and surface tension on the electron–acoustic phonon scattering rate and the mobility of rectangular silicon nanowires. With the elastic theory and the interaction Hamiltonian for the deformation potential, which considers both the surface energy and the acoustoelastic effects, the phonon dispersion relation for a stressed nanowire under spatial confinement is derived. The subsequent analysis indicates that both surface tension and pre-stress can dramatically change the electron–acoustic phonon interaction. Under a negative（positive） surface tension and a tensile（compressive） pre-stress, the electron mobility is reduced（enhanced） due to the decrease（increase） of the phonon energy as well as the deformation-potential scattering rate. This study suggests an alternative approach based on the strain engineering to tune the speed and the drive current of low-dimensional electronic devices.

关键词： phonon properties elastic model electron–acoustic phonon interaction carrier mobility

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Molecular dynamics study on the dependence of thermal conductivity on size and strain in GaN nanofilms

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Chinese Physics B 2023年第6期32卷 454-458页

作者：唐莹刘俊坤于子皓孙李刚朱林利 College of Optics and Electronics Technology China Jiliang UniversityHangzhou 310018China Key Laboratory of Soft Machines and Smart Devices of Zhejiang Province School of Aeronautics and AstronauticsZhejiang UniversityHangzhou 310027China School of Science Harbin Institute of TechnologyShenzhen 518055China

The thermal conductivity of GaN nanofilm is simulated by using the molecular dynamics(MD)method to explore the influence of the nanofilm thickness and the pre-strain field under different temperatures.It is demonstrated that the thermal conductivity of GaN nanofilm increases with the increase of nanofilm thickness,while decreases with the increase of temperature.Meanwhile,the thermal conductivity of strained GaN nanofilms is weakened with increasing the tensile strain.The film thickness and environment temperature can affect the strain effect on the thermal conductivity of GaN nanofilms.In addition,the analysis of phonon properties of GaN nanofilm shows that the phonon dispersion and density of states of GaN nanofilms can be significantly modified by the film thickness and strain.The results in this work can provide the theoretical supports for regulating the thermal properties of GaN nanofilm through tailoring the geometric size and strain engineering.

关键词： molecular dynamics simulation GaN nanofilm thermal conductivity phonon properties size effect strain effect

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