Electron–acoustic phonon interaction and mobility in stressed rectangular silicon nanowires

作     者：朱林利 

作者机构：Department of Engineering Mechanics School of Aeronautics and Astronautics Zhejiang University 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2015年第24卷第1期

页      面：411-417页

核心收录：

学科分类：07[理学] 082403[工学-水声工程] 08[工学] 070206[理学-声学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0824[工学-船舶与海洋工程] 0704[理学-天文学] 0702[理学-物理学] 

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.11472243,11302189,and 11321202) the Doctoral Fund of Ministry of Education of China(Grant No.20130101120175) the Zhejiang Provincial Qianjiang Talent Program,China(Grant No.QJD1202012) the Educational Commission of Zhejiang Province,China(Grant No.Y201223476) 

主　　题：phonon properties elastic model electron–acoustic phonon interaction carrier mobility 

摘      要：We investigate the effects of pre-stress and surface tension on the electron–acoustic phonon scattering rate and the mobility of rectangular silicon nanowires. With the elastic theory and the interaction Hamiltonian for the deformation potential, which considers both the surface energy and the acoustoelastic effects, the phonon dispersion relation for a stressed nanowire under spatial confinement is derived. The subsequent analysis indicates that both surface tension and pre-stress can dramatically change the electron–acoustic phonon interaction. Under a negative（positive） surface tension and a tensile（compressive） pre-stress, the electron mobility is reduced（enhanced） due to the decrease（increase） of the phonon energy as well as the deformation-potential scattering rate. This study suggests an alternative approach based on the strain engineering to tune the speed and the drive current of low-dimensional electronic devices.