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Chinese Physics B 2017年第8期26卷 481-490页

作者：姜帅贾锐陶科侯彩霞孙恒超于志泳李勇滔 Institute of Microelectronics Chinese Academy of SciencesBeijing 100029China University of Chinese Academy of Sciences Beijing 100049China Jiangxi Science&Technology Normal University Nanchang 330013China

Interdigitated back contact（IBC） solar cells can achieve a very high efficiency due to its less optical losses. But IBC solar cells demand for high quality passivation of the front surface. In this paper, a polycrystalline silicon/SiO_2 stack structure as front surface field to passivate the front surface of IBC solar cells is proposed. The passivation quality of this structure is investigated by two dimensional simulations. polycrystalline silicon layer and SiO_2 layer are optimized to get the best passivation quality of the IBC solar cell. Simulation results indicate that the doping level of polycrystalline silicon should be high enough to allow a very thin polycrystalline silicon layer to ensure an effective passivation and small optical losses at the same time. The thickness of SiO_2 should be neither too thin nor too thick, and the optimal thickness is 1.2 ***, the lateral transport properties of electrons are investigated, and the simulation results indicate that a high doping level and conductivity of polycrystalline silicon can improve the lateral transportation of electrons and then the cell performance.

关键词： polycrystalline silicon SiO2 solar cell passivation simulation IBC

A Novel Maximum Resolved Shear Stress Gradient Criterion and Its Application for Crack Deflection Behavior in polycrystalline silicon Materials

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Acta Mechanica Solida Sinica 2022年第3期35卷 518-526页

作者： Yangbo Zhang Qida Liu Qun Li Yangdong Ni Yuanjie Yu Jean-Nicolas Jaubert Eric Lajoie-Mazenc Emmanuel Boyere Metais Thomas Hong Zuo State Key Laboratory for Strength and Vibration of Mechanical Structures Shaanxi Key Laboratory of Environment and Control for Flight VehicleSchool of Aerospace EngineeringXi’an Jiaotong UniversityXi’an 710049China Canadian Solar Inc Guelph OntarioCanada R&D Centre EDF China Tianrun Fortune Center Tower AFI 8Rm.807No.58 Dongzongbu HutongDongcheng DistrictBeijing 100005China

In this paper,a development of new resolved shear stress gradient criteria is performed for the study of crack propagation behavior in polycrystalline materials with an emphasis on the effect of slip plane and slip *** prediction of crack deflection behavior by the maximum resolved shear stress gradient criterion shows good agreement with the experimental *** study for the prediction of crack propagation behavior in poly crystalline materials by other criteria demonstrates that the maximum resolved shear stress gradient criterion is superior to other fracture *** suggests that the new criterion could be further applied for predicting the crack deflection behavior in other polycrystalline materials.

关键词： Resolved shear stress gradient Crystal plasticity Crack deflection polycrystalline silicon

Degradation and Self-recovery of polycrystalline silicon TFT CMOS Inverters Under NBTI Stress

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Chinese Journal of Electronics 2019年第4期28卷 884-888页

作者： GUO Jian YU Zhinong YAN Wei SHI Dawei XUE Jianshe XUE Wei School of Optics and Photonics and Beijing Engineering Research Center of Mixed Reality and Advanced Display Beijing Institute of Technology

Degradation and self-recovery of polycrystalline silicon(poly-Si) Thin film transistor(TFT) by using complementary metal oxide semiconductor(CMOS)inverter were investigated. Under DC stress, degradation mechanisms were clarified by comparing the Voltage transfer characteristics(VTC) of fresh and stressed inverters. It is determined that Negative bias temperature instability(NBTI) of p-TFT dominates the degradation of the inverter under zero bias DC stress. After removing the stress, the VTC continues to be degraded, because the interface trap-states and the grain boundary trapstates increase due to hydrogen species diffusion. It is found out that the VTC is shifted to its right side severely with negative bias stress of VIN. The NBTI of p-TFT is enhanced and the NBTI of n-TFT also plays a role on the degradation. When removing the negative bias stress, the self-recovery of NBTI of nTFT and the continuing degradation of NBTI of p-TFT become competing mechanisms, together controlling the VTC after-stress behavior. Consequently, the continuing degradation of NBTI of p-TFT is restrained by selfrecovery of NBTI of n-TFT.

关键词： Negative bias temperature instability(NBTI) Self-recovery Inverter polycrystalline silicon Voltage transfer characteristics(VTC)

Effect of hydrogen on low temperature epitaxial growth of polycrystalline silicon by hot wire chemical vapor deposition

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Journal of Semiconductors 2015年第2期36卷 29-33页

作者：曹勇张海龙刘丰珍朱美芳董刚强 University of Chinese Academy of Sciences

polycrystalline silicon （poly-Si） films were prepared by hot-wire chemical vapor deposition （HWCVD） at a low substrate temperature of 525 ℃. The influence of hydrogen on the epitaxial growth of ploy-Si films was investigated. Raman spectra show that the poly-Si films are fully crystallized at 525 ℃ with a different hydrogen dilution ratio （50%-91.7%）. X-ray diffraction, grazing incidence X-ray diffraction and SEM images show that the poly-Si thin films present （100） preferred orientation on （100） c-Si substrate in the high hydrogen dilution condition. The P-type poly-Si film prepared with a hydrogen dilution ratio of 91.7% shows a hall mobility of 8.78 cm2/（V-s） with a carrier concentration of 1.3 × 10^20 cm^-3, which indicates that the epitaxial poly-Si film prepared by HWCVD has the possibility to be used in photovoltaic and TFT devices.

关键词： polycrystalline silicon hot-wire chemical vapor deposition low temperature epitaxial growth

Effect of Thermal Annealing on Characteristics of polycrystalline silicon

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Journal of Semiconductors 2005年第12期26卷 2294-2297页

作者：任丙彦勾宪芳马丽芬励旭东许颖王文静河北工业大学半导体研究所天津300130 北京太阳能研究所北京100083

Oxygen and carbon behaviors and minority-carrier lifetimes in multi-crystalline silicon （mc-Si） used for solar cells are investigated by FTIR and QSSPCD before and after annealing at 750～ 1150℃ in N2 and O2 ambient. For comparison, the annealing of CZ silicon with nearly the same oxygen and carbon concentrations is also carried out under the same conditions. The results reveal that the oxygen and carbon concentrations of mc-Si and CZ-Si have a lesser decrease,which means oxygen precipitates are not generated,and grain boundaries in mc-Si do not affect carbon behavior. Bulk lifetime of mc-Si increases in N2 and O2 ambient at 850,950,and 1150℃ ,and the lifetime of mc-Si wafers annealed in 02 are higher than those annealed in N2, which shows that a lot of impurities in mc-Si at high temperature annealing diffuse to grain boundaries,greatly reducing recombination centers. Interstitial Si atoms filling vacancies or recombination centers increases lifetime.

关键词： polycrystalline silicon oxygen lifetime

Effect of Boundary Layers on polycrystalline silicon Chemical Vapor Deposition in a Trichlorosilane and Hydrogen System

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Chinese Journal of Chemical Engineering 2011年第1期19卷 1-9页

作者：张攀王伟文陈光辉李建隆 Institute of Electronmechanical Engineering Qingdao University of Science and Technology Qingdao 266061 China Institute of Chemical Engineering.Qingdao University of Science and Technology Qingdao 266042 China

This paper presents the numerical investigation of the effects of momentum, thermal and species boundary layers on the characteristics of polycrystalline silicon deposition by comparing the deposition rates in three chemical vapor deposition （CVD） reactors. A two-dimensional model for the gas flow, heat transfer, and mass transfer was coupled to the gas-phase reaction and surface reaction mechanism for the deposition of polycrystalline silicon from trichlorosilane （TCS）-hydrogen system. The model was verified by comparing the simulated growth rate with the experimental and numerical data in the open literature. Computed results in the reactors indicate that the deposition characteristics are closely related to the momentum, thermal and mass boundary layer thickness. To yield higher deposition rate, there should be higher concentration of TCS gas on the substrate, and there should also be thinner boundary layer of HCl gas so that HCl gas could be pushed away from the surface of the substrate immediately.

关键词： boundary layer polycrystalline silicon numerical simulation mass diffusion

Three Dimensional Study of Spectral Response of polycrystalline silicon Solar Cells： Vertical Junction Frequency Modulation Scheme

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Journal of Energy and Power Engineering 2013年第5期7卷 903-906页

作者： Nouhou Bako Zeinabou Hawa Ly Diallo Aminata Gueye Camarat Moustapha Thiam Dan Maza Abouzeidi Madougou Saidou Gregoire Sissoko Departement de Physique FST Universite de Maradi Maradi 65110 Niger Laboratoire des Semiconducteurs et d'Energie Solaire Departement de Physique FST Universitd Cheikh Anta Diop DakarSenegal Departement de Physique ENS Universite Abdou Moumouni de Niamey Niamey 10 963 Niger

In this paper, the modeling ofa bifacial polycrystalline silicon solar cells vertical junction is presented. The study in dynamic frequency is limited to wavelengths from 400 nm to 1100 nm. The dependence of solar cell spectral response on wavelengths for several modulation frequencies was evaluated by using solar cell internal quantum *** objective is to characterize the polycrystalline silicon in 3D. The effect of frequency modulation pulsation on the phase of internal quantum efficiency was presented as well as values of shunt and series resistance for various grains size values. The results show that the value of maximum internal quantum efficiency is about 50% with a wavelength of 0,82 nm and a frequency of 103 rad/s under monochromatic illumination.

关键词： Solar cell vertical junction polycrystalline silicon frequency modulation internal quantum efficiency wavelength.

Experimental study on crystallinity of polycrystalline silicon thin film fabricated by electron cyclotron resonance enhanced chemical vapour deposition

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Experimental study on crystallinity of polycrystalline silic...

Dynamic Ni gettered by PSG from S-MIC poly-Si and its TFTs

第十五届全国等离子体科学技术会议

作者： Xiao Zuo,XingSheng Shu,YueDong Meng,LongWei Chen,Yu Wei,Jie Shen,ShiDong Fang Applied Plasma Division,Institute of Plasma Physics,Chinese Academy of Sciences,Hefei,230031, P.R.China

Using glasses as substrates is a promising way to lower the cost of thin film solar *** purity argon diluted silane(SiHAbstract4) and HAbstract2 were used as resource gases. Si-(111) preferential orientation polycrystalline silicon film was directly deposited at less than 200℃on glasses in a DC-biased compact electron cyclotron resonance enhanced chemical vapour deposition(ECR-PECVD) ***-Si films fabricated in this system have smooth *** effects of R(=[SiH]/([SiH]+[H])), substrate bias(V) on crystallinity of polysilicon were *** the other conditions are constant,the crystallinity of the thin silicon films increases first and then decreases with the increase of the SiH dilution *** transition from amorphous to crystalline growth happens at the point about R=2/*** crystallinity has a maximum of 62.4%which is thought as feasible result for fabricating solar cells When R=3/*** dependence of crystallinity on DC-bias was also *** crystallinity of silicon films decreases with the increase of V from -15V to 15V,which demonstrates that the minus bias is more beneficial to *** reported the neutral groups play a main role in fabricating polysilicon film,the results presented in this article indicated that the bombardment of positive ions is benefit for crystallization. The improvement of the deposition rate and the grain size still need to be investigated.

关键词： polycrystalline silicon thin film crystallinity ECR-PECVD

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Chinese Physics B 2008年第4期17卷 1415-1420页

作者：孟志国李阳吴春亚赵淑芸李娟王文郭海诚熊绍珍 Institute of Photo-electronics of Nankai University Tianjin key laboratory for Photo-electronic thin film devices and TechnologyTianjin Key Laboratory of Photo-electronic Thin Film Devices and Technology Department of electronic and computer engineering Hong Kong University of Science and TechnologyClear Water BayKowloon

A dynamic phosphor-silicate glass （PSG） gettering method is proposed in which the processes of the gettering of Ni by PSC and the crystallizing of α-Si into poly-Si by Ni take place simultaneously. The effects of PSC gettering process on the performances of solution-based metal induced crystallized （S-MIC） poly-Si materials and their thin film transistors （TFTs） are discussed. The crystallization rate is much reduced due to the fact that the Ni as a medium source of crystallization is extracted by the PSC during crystallization at the same time. The boundary between two neighbouring grains in S-MIC poly-Si with PSG looks blurrier than without PSG. Compared with the TFTs made from S-MIC poly-Si without PSC gettering, the TFTs made with PSC gettering has a reduced gate induced leakage current.

关键词： metal induced crystallization polycrystalline silicon nickel gettering phosphor-silicate glass (PSG)

Fabrication of Nano-Columnar Tungsten Films and Their Deuterium and Helium Ion Irradiation Effects

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Chinese Physics Letters 2014年第12期31卷 31-34页

作者：韩文佳陈哲俞坚钢冯红丽朱开贵 Department of Physics Beihang University Beijing 100191

Nuclear fusion energy for electricity generation is drawing significant attention, due to the fact that it is a clean, safe, and environmentally friendly energy source. The plasma facing material （PFM） is one of the key factors that determine the development of fu- sion reactors. The fusion energy system requires ex- cellent performance of PFMs under high heat flux de- position and particles irradiation. PFMs not only are exposed to unprecedented steady-state and tran- sient power fluxes, but also are bombarded with un- precedented neutron fluxes. In nuclear fusion reactors, the PFM suffers from high-energy （14MeV） neutron irradiation and a high heat flux of ～10MW/m2. A variety of point defects （e.g., interstitials, vacan- cies, helium, and hydrogen gas atoms） are produced in the process of irradiation through atomic displace- ment and nuclear transformation. These point defects form defect clusters （e.g., voids and interstitial loops） and thus change the mechanical properties and mi- crostructure of the material even to the extent that their structural integrity is compromised.

关键词： polycrystalline silicon Tungsten films Helium ions Deuterium ions Magnetron sputtering Scanning electron microscopy Microfabrication