Degradation and Self-recovery of Polycrystalline Silicon TFT CMOS Inverters Under NBTI Stress
Degradation and Self-recovery of Polycrystalline Silicon TFT CMOS Inverters Under NBTI Stress作者机构：School of Optics and Photonics and Beijing Engineering Research Center of Mixed Reality and Advanced Display Beijing Institute of Technology
出 版 物：《Chinese Journal of Electronics》 (电子学报(英文))
年 卷 期：2019年第28卷第4期
页 面：884-888页
核心收录：
学科分类：080903[工学-微电子学与固体电子学] 0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0701[理学-数学]
基 金：supported by the National Natural Science Foundation of China(No.61675024)
主 题：Negative bias temperature instability(NBTI) Self-recovery Inverter Polycrystalline silicon Voltage transfer characteristics(VTC)
摘 要：Degradation and self-recovery of polycrystalline Silicon(poly-Si) Thin film transistor(TFT) by using complementary metal oxide semiconductor(CMOS)inverter were investigated. Under DC stress, degradation mechanisms were clarified by comparing the Voltage transfer characteristics(VTC) of fresh and stressed inverters. It is determined that Negative bias temperature instability(NBTI) of p-TFT dominates the degradation of the inverter under zero bias DC stress. After removing the stress, the VTC continues to be degraded, because the interface trap-states and the grain boundary trapstates increase due to hydrogen species diffusion. It is found out that the VTC is shifted to its right side severely with negative bias stress of VIN. The NBTI of p-TFT is enhanced and the NBTI of n-TFT also plays a role on the degradation. When removing the negative bias stress, the self-recovery of NBTI of nTFT and the continuing degradation of NBTI of p-TFT become competing mechanisms, together controlling the VTC after-stress behavior. Consequently, the continuing degradation of NBTI of p-TFT is restrained by selfrecovery of NBTI of n-TFT.
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