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Study on the saturation characteristics of high-speed uni-traveling-carrier photodiodes based on field screening analysis

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Chinese Optics Letters 2011年第8期9卷 79-82页

作者：石拓熊兵孙长征罗毅 Tsinghua National Laboratory for Information Science and Technology State Key Lab on Integrated OptoelectronicsDepartment of Electronic EngineeringTsinghua University

A back-illuminated mesa-structure InGaAs/InP charge-compensated uni-traveling-carrier （UTC） photodi- ode （PD） is fabricated, and its saturation characteristics are investigated. The responsivity of the 40-μm- diameter PD is as high as 0.83 A/W, and the direct current （DC） saturation current is up to 275 mA. The 1-dB compression point at the 3-dB cutoff frequency of 9 GHz is measured to be 100 mA, corresponding to an output radio frequency （RF） power of up to 20.1 dBm. According to the calculated electric field distributions in the depleted region under both DC and alternating current （AC） conditions, the saturation of the UTC-PD is cansed hv cnmnlete field screening at high optical iniectinn levels

关键词： DC power transmission Electric fields photodiodes

Reverse current reduction of Ge photodiodes on Si without post-growth annealing

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Chinese Optics Letters 2009年第4期7卷 286-290页

作者： Sungbong Park Shinya Takita Yasuhiko Ishikawa Jiro Osaka Kazumi Wada Department of Materials Engineering University of Tokyo

A new approach to reduce the reverse current of Ge pin photodiodes on Si is presented, in which an i-Si layer is inserted between Ge and top Si layers to reduce the electric field in the Ge layer. Without post- growth annealing, the reverse current density is reduced to -10 mA/cm^2 at -1 V, i.e., over one order of magnitude lower than that of the reference photodiode without i-Si layer. However, the responsivity of the photodiodes is not severely compromised. This lowered-reverse-current is explained by band-pinning at the i-Si/i-Ge interface. Barrier lowering mechanism induced by E-field is also discussed. The presented ＂non-thermal＂ approach to reduce reverse current should accelerate electronics-photonics convergence by using Oe on the Si complementary metal oxide semiconductor （CMOS） platform.

关键词： CMOS integrated circuits Electric fields Germanium Metals MOS devices Oxide semiconductors photodiodes Silicon Silicon on insulator technology

Growth and Characterization of GaSb-Based Type-Ⅱ InAs/GaSb Superlattice photodiodes for Mid-Infrared Detection

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Chinese Physics Letters 2010年第7期27卷 245-248页

作者：王国伟徐应强郭杰汤宝任正伟贺振宏牛智川 State Key Laboratory for Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 Luoyang Opts-electronics Development Center Luoyang 471009

InAs/GaSb superlattiee （SL） midwave infrared photovoltaic detectors are grown by molecular beam epitaxy on GaSb（001） residud p-type substrates. A thick GaSb layer is grown under the optimized growth condition as a buffer layer. The detectors containing a 320-period 8ML/SML InAs/GaS5 SL active layer are fabricated with a series pixel area using anode sulfide passivation. Corresponding to 50% cutoff wavelengths of 5.0 μm at 77K, the peak directivity of the detectors is 1.6 × 10^10 ***^1/2 W^-1 at 77K.

关键词： CRYSTAL growth INDIUM arsenide SUPERLATTICES photodiodes INFRARED detectors PHOTOVOLTAIC effect MOLECULAR beam epitaxy SUBSTRATES (Materials science)

Ultra-wideband Waveguide-coupled photodiodes Heterogeneously Integrated on a Thin-film Lithium Niobate Platform

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Light(Advanced Manufacturing) 2023年第3期4卷 263-271页

作者： Chao Wei Youren Yu Ziyun Wang Lin Jiang Zhongming Zeng Jia Ye Xihua Zou Wei Pan Xiaojun Xie Lianshan Yan Key Laboratory of Photonic-Electric Integration and Communication-Sensing Convergence School of Information Science and TechnologySouthwest Jiaotong UniversityChengdu611756China School of Nano Technology and Nano Bionics University of Science and Technology of ChinaHefei230026China

With the advantages of large electro-optical coefficient,wide transparency window,and strong optical confinement,thin-film lithium niobate(TFLN)technique has enabled the development of various high-performance optoelectronics devices,ranging from the ultra-wideband electro-optic modulators to the high-efficient quantum ***,the TFLN platform does not natively promise lasers and *** study presents an InP/InGaAs modified uni-traveling carrier(MUTC)photodiodes heterogeneously integrated on the TFLN platform with a record-high 3-dB bandwidth of 110 GHz and a responsivity of 0.4 A/W at a 1,550-nm *** is implemented in a wafer-level TFLN-InP heterogeneous integration platform and is suitable for the large-scale,multi-function,and high-performance TFLN photonic integrated circuits.

关键词： photodiodes Thin-film lithium niobate Integrated photonics Ultra-wideband electro-optic modulators

Photovoltaic Properties of Thermally-Grown Selenium-Doped Silicon photodiodes for Infrared Detection Applications

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Photonic Sensors 2015年第2期5卷 152-158页

作者： Oday A. HAMMADI Department of Physics College of Education Al-Iraqia University Baghdad Iraq

In this work, the photovoltaic properties of selenium-doped silicon photodiodes were studied. Influence of illumination of the impurity absorption range on the current-voltage and spectral characteristics of the fabricated device were considered. The photoresponse dependencies on the electric intensity, current, and radiation power at the sample were observed. Results obtained in this work showed that the current-sensitivity of the fabricated structures at the forward bias was rather higher than that of photoresistors. The photosensitivity and detectivity were up to 2.85 × 10^- 6 ***^-1/2 and 2.1 × 10^11 ***^1/2w^-1, respectively.

关键词： Silicon devices selenium dopant photodiodes photovoltaic properties

High-performance 4H-SiC p-i-n ultraviolet avalanche photodiodes with large active area

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Chinese Optics Letters 2019年第9期17卷 1-4页

作者： Xingye Zhou Xin Tan Yuangang Wang Xubo Song Tingting Han Jia Li Weili Lu Guodong Gu Shixiong Liang Yuanjie Lii Zhihong Feng National Key Laboratory of ASIC Hebei Semiconductor Research Institute

Ultraviolet(UV) detectors with large photosensitive areas are more advantageous in low-level UV detection applications. In this Letter, high-performance 4 H-SiC p-i-n avalanche photodiodes(APDs) with large active area(800 μm diameter) are reported. With the optimized epitaxial structure and device fabrication process,a high multiplication gain of 1.4 × 10^6 is obtained for the devices at room temperature, and the dark current is as low as ~10 p A at low reverse voltages. In addition, record external quantum efficiency of 85.5% at 274 nm is achieved, which is the highest value for the reported Si C APDs. Furthermore, the rejection ratio of UV to visible light reaches about 10^4. The excellent performance of our devices indicates a tremendous improvement for largearea SiC APD-based UV detectors. Finally, the UV imaging performance of our fabricated 4 H-SiC p-i-n APDs is also demonstrated for system-level applications.

关键词： Ultraviolet(UV) 4H-SiC p-i-n photodiodes

Detection performance of trigger-controlled Geiger-mode avalanche photodiodes in weak optical signal detection

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Chinese Optics Letters 2016年第4期14卷 81-85页

作者：赵鹏袁亚博张艳钱卫平 Beijing Institute of Tracking and Telecommunications Technology Beijing 100094 China Key Laboratory of Space Object Measurement Beijing 100094 Chine

This Letter introduces a trigger-controlled Geiger-mode avalanche photodiode （GM-APD）. A hierarchical look- back-upon tree recurrence method is given to predict the performance of trigger-controlled GM-APDs under different trigger-count upper limits. In addition, the normalized detection probability is defined to evaluate the detection performance of trigger-controlled GM-APDs in typical weak optical signal detection （impulse noise and continuous noise situations）. Theoretical analyses show that the trigger-controlled GM-APD improves the detection performance of GM-APDs in weak optical signal detection via the optimization of the trigger-count upper limit, compared with single-trigger and multi-trigger GM-APDs.

关键词： Avalanche photodiodes Geiger counters Impulse noise Optical signal processing photodiodes

Distributed parameter circuit model for wideband photodiodes with inductive coplanar waveguide electrodes

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Chinese Optics Letters 2020年第6期18卷 40-44页

作者： Yaru Han Bing Xiong Changzheng Sun ZhibiaoHao Jian Wang Yan junHan Lai Wang Hongtao Li Jiadong Yu Yi Luo Beijing National Research Center for Information Science and Technology(BNRist) Department of Electronic EngineeringTsinghua UniversityBeijing 100084China Center for Flexible Electronics Technology Tsinghua UniversityBeijing 100084China Flexible Intelligent Optoelectronic Device and Technology Center Institute of Flexible Electronics Technology of THUJiaxing 314006China

An equivalent circuit model including multi-section distributed parameters is proposed to analyze wideband photodiodes(PDs)with coplanar waveguide(CPW)*** model helps extract CPW parameters as well as intrinsic bandwidth parameters so that the influence of theCPW structure can be investigated,making it valuable for the design of high-performance *** with an inductive 115Ωimpedance CPW are fabricated,and the 3 dB bandwidth is improved from 28 GHz to 37.5 GHz compared with PDs with a conventional 50Ωimpedance CPW.

关键词： photodiodes photodetector high-impedance coplanar waveguide

The Influence of Rapid Thermal Annealing on SiGe/Si Multiple-Quantum Wells p_-i_-n photodiodes

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Journal of Semiconductors 2001年第6期22卷 695-699页

作者：李成杨沁清王红杰王玉田余金中王启明中国科学院半导体研究所集成光电子国家重点实验室北京100083

The influence of thermal treatment on Si 1-x Ge x/Si multiple-quantum wells (MQW) p-i-n photodiodes has been investigated by photocurrent spectroscopy combined with X-ray double crystal *** cutoff wavelength is significantly reduced due to the Si-Ge interdiffusion and partial relaxation of the strained SiGe *** values of the blue shift increase slowly with the annealing temperatures in the range of 750℃ to 850℃.However,the nonlinear changes in photocurrent intensities of the samples annealed at different temperatures have been observed,which is mainly dominated by the generation of misfit dislocations and the reduction of the point defects in the heating process.

关键词： SiGe/Si MQW photodiodes blue shift thermal annealing interdiffusion