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大连铁道学院学报 2003年第3期24卷 47-51页

作者：薛严冰王东兴赵闻蕾大连铁道学院电气信息分院辽宁大连116028

在分析SIT器件电流-电压特性的理论基础上,对由有机半导体材料酞氰铜制作的有机SIT进行了静态特性的测试,通过对测试曲线进行数据拟合与解析,得出一系列osit在不同偏压条件下,电流-电压的表达式,数据解析结果表明,有机SIT器件的静态特... 详细信息

在分析SIT器件电流-电压特性的理论基础上,对由有机半导体材料酞氰铜制作的有机SIT进行了静态特性的测试,通过对测试曲线进行数据拟合与解析,得出一系列osit在不同偏压条件下,电流-电压的表达式,数据解析结果表明,有机SIT器件的静态特性同无机SIT器件静态特性的理论分析基本相符。

关键词：有机静电感应三极管 osit 静态工作特性电流-电压特性有机半导体酞氰铜数据解析

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Exponential dependence of potential barrier height on biased voltages of inorganic/organic static induction transistor

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Journal of Semiconductors 2010年第4期31卷 20-24页

作者：张雍杨建红蔡雪原汪再兴 Institute of Microelectronics School of Physical Science and TechnologyLanzhou University School of Electronic and Information Engineering Lanzhou Jiaotong University

The exponential dependence of the potential barrier height Фc on the biased voltages of the inorganic/organic static induction transistor （SIT/osit） through a normalized approach in the low-current regime is presented. It shows a more accurate description than the linear expression of the potential barrier height. Through the verification of the numerical calculated and experimental results, the exponential dependence of Фc on the applied biases can be used to derive the I-V characteristics. For both SIT and osit, the calculated results, using the presented relationship, are agreeable with the experimental results. Compared to the previous linear relationship, the exponential description Of Фc can contribute effectively to reduce the error between the theoretical and experimental results of the I-V characteristics.

关键词： SIT osit potential barrier height normalized approach I-V characteristics

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