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Research progress on 2D ferroelectric and ferrovalley materials and their neuromorphic application

Science China(Physics,Mechanics & Astronomy) 2023年第11期66卷 55-76页

作者： Yifan Tan Junding Zheng Xuezhong Niu Yifeng Zhao Ni Zhong Bobo Tian Chungang Duan Key Laboratory of Polar Materials and Devices Ministry of EducationShanghai Center of Brain-inspired Intelligent Materials and DevicesDepartment of ElectronicsEast China Normal UniversityShanghai200241China Collaborative Innovation Center of Extreme Optics Shanxi UniversityTaiyuan030006China

Two-dimensional(2D)ferroelectric and ferrovalley materials have recently received extensive attention due to their significant advantages for modern electronic devices,such as miniaturization,low-dissipation,non-volatility,and *** interestingly,the couplings between the ferroic orders in these materials have enriched the development of intelligent devices,especially in neuromorphic *** this paper,the research progress of 2D ferroelectric and ferrovalley materials is introduced and the coupling effects between them are also ***,we briefly introduce recent neuromorphic computing reports based on 2D ferroelectric materials and give perspectives on ferrovalley neuromorphic devices.

关键词： two-dimensional materials ferroelectric materials multiferroic coupling neuromorphic application

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Forming-free flexible memristor with multilevel storage for neuromorphic computing by full PVD technique

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Journal of Materials Science & Technology 2021年第1期60卷 21-26页

作者： Tian-Yu Wang Jia-Lin Meng Qing-Xuan Li Lin Chen Hao Zhu Qing-Qing Sun Shi-Jin Ding David Wei Zhang State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghai 200433China

Flexible resistive random access memory(RRAM) has shown great potential in wearable *** tunable multilevel resistance states,flexible memristors could be used to mimic the bio-synapses for constructing high-efficient wearable neuromorphic computing ***,the flexible substrate has intrinsic disadvantages including low-tempe rature tolerance and poor complementary metal-oxidesemiconductor(CMOS) compatibility,which limit the development of flexible *** physical vapor deposition(PVD) fabrication process could prepare RRAM without requirement of further treatment,which greatly simplified preparation steps and reduced the production *** the other hand,forming process,as a common pre-programing operation in RRAM,increases the energy consumption and limits the application scenarios of ***,a NiO-based forming-free RRAM with low set voltage was fabricated via full PVD *** flexible device exhibited reliable re sistive switching characteristics under flat state even compre s sive and tensile states(R=10 mm).The tunable multilevel resistance states(5 levels) could be obtained by controlling the compliance ***,synaptic plasticities also were verified in this *** flexible NiO-based RRAM shows great potential in wearable forming-free multibit memo ry and neuromorphic computing electronics.

关键词： Full PVD process Flexible memristor Forming-free Multilevel storage neuromorphic application

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