Forming-free flexible memristor with multilevel storage for neuromorphic computing by full PVD technique

作     者：Tian-Yu Wang Jia-Lin Meng Qing-Xuan Li Lin Chen Hao Zhu Qing-Qing Sun Shi-Jin Ding David Wei Zhang Tian-Yu Wang;Jia-Lin Meng;Qing-Xuan Li;Lin Chen;Hao Zhu;Qing-Qing Sun;Shi-Jin Ding;David Wei Zhang

作者机构：State Key Laboratory of ASIC and SystemSchool of MicroelectronicsFudan UniversityShanghai 200433China 

出 版 物：《Journal of Materials Science & Technology》 (材料科学技术（英文版）)

年 卷 期：2021年第60卷第1期

页      面：21-26页

核心收录：

学科分类：08[工学] 081201[工学-计算机系统结构] 0812[工学-计算机科学与技术（可授工学、理学学位）] 

基　　金：supported by the National Natural Science Foundation of China(Nos.61704030 and 61522404) the Shanghai Rising-Star Program(No.19QA1400600) the Program of Shanghai Subject Chief Scientist(No.18XD1402800) the Support Plans for the Youth Top-Notch Talents of China 

主　　题：Full PVD process Flexible memristor Forming-free Multilevel storage Neuromorphic application 

摘      要：Flexible resistive random access memory(RRAM) has shown great potential in wearable *** tunable multilevel resistance states,flexible memristors could be used to mimic the bio-synapses for constructing high-efficient wearable neuromorphic computing ***,the flexible substrate has intrinsic disadvantages including low-tempe rature tolerance and poor complementary metal-oxidesemiconductor(CMOS) compatibility,which limit the development of flexible *** physical vapor deposition(PVD) fabrication process could prepare RRAM without requirement of further treatment,which greatly simplified preparation steps and reduced the production *** the other hand,forming process,as a common pre-programing operation in RRAM,increases the energy consumption and limits the application scenarios of ***,a NiO-based forming-free RRAM with low set voltage was fabricated via full PVD *** flexible device exhibited reliable re sistive switching characteristics under flat state even compre s sive and tensile states(R=10 mm).The tunable multilevel resistance states(5 levels) could be obtained by controlling the compliance ***,synaptic plasticities also were verified in this *** flexible NiO-based RRAM shows great potential in wearable forming-free multibit memo ry and neuromorphic computing electronics.