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monolithic integrated micro-supercapacitors with ultra-high systemic volumetric performance and areal output voltage

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National Science Review 2023年第3期10卷 169-177页

作者： Sen Wang Linmei Li Shuanghao Zheng Pratteek Das Xiaoyu Shi Jiaxin Ma Yu Liu Yuanyuan Zhu Yao Lu Zhong-Shuai Wu Hui-Ming Cheng State Key Laboratory of Catalysis Dalian Institute of Chemical Physics Chinese Academy of Sciences Department of Biotechnology Dalian Institute of Chemical Physics Chinese Academy of Sciences Dalian National Laboratory for Clean Energy Chinese Academy of Sciences University of Chinese Academy of Sciences Faculty of Materials Science and Engineering Institute of Technology for Carbon NeutralityShenzhen Institute of Advanced TechnologyChinese Academy of Sciences Shenyang National Laboratory for Materials Science Institute of Metal Research Chinese Academy of Sciences Advanced Technology Institute University of Surrey

monolithic integrated micro-supercapacitors(MIMSCs) with high systemic performance and cell-number density are important for miniaturized electronics to empower the Internet of Things.However,fabrication of customizable MIMSCs in an extremely small space remains a huge challenge considering key factors such as materials selection,electrolyte confinement,microfabrication and device-performance uniformity.Here,we develop a universal and large-throughput microfabrication strategy to address all these issues by combining multistep lithographic patterning,spray printing of MXene micro electrodes and controllable 3D printing of gel electrolytes.We achieve the monolithic integration of electrochemically isolated micro-supercapacitors in close proximity by leveraging high-resolution micropatterning techniques for micro electrode deposition and 3D printing for precise electrolyte deposition.Notably,the MIMSCs obtained demonstrate a high areal-number density of 28 cells cm-2(340 cells on 3.5 × 3.5 cm2),a record areal output voltage of 75.6 V cm-2,an acceptable systemic volumetric energy density of 9.8 mWh cm-3and an unprecedentedly high capacitance retention of 92% after 4000 cycles at an extremely high output voltage of 162 V.This work paves the way for monolithic integrated and microscopic energy-storage assemblies for powering future microele ctronics.

关键词： monolithic integrated micro-supercapacitors areal output voltage lithography MXene

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monolithic polyimine vitrimer/graphene aerogel composites

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Chinese Chemical Letters 2023年第2期34卷 529-533页

作者： Jinye Zhang Shichang Luo Yunlong Ma Ruiyang Li Yinghua Jin Li Qiu Wei Zhang Yunnan Key Laboratory for Micro/Nano Materials&Technology National Center for International Research on Photoelectric and Energy MaterialsSchool of Materials and EnergyYunnan UniversityKunming 650091China Department of Chemistry University of Colorado BoulderBoulderCO 80309United States

Graphene-polymer composites have attracted great attention as sensing materials due to their tailorable electrical conductivity, physicochemical properties, and sensitivity to geometric and functional changes.Herein, we report the first example of cylindrical monolithic polyimine vitrimer/graphene composites with excellent mechanical, compressive, rehealable and recyclable, and piezoresistive properties via simple infiltration of polymer monomers into the pores of graphene aerogel followed by thermal curing. The composites exhibit excellent durable compressibility(negligible reduction in the compression properties even after 3000 consecutive compression cycles), rapid recovery to the original size upon stress released,high compressive strength(up to 1.2 MPa), and high conductivity(up to 79 S/m). Excellent piezoresistive properties were observed, displaying consistent and reliable change of the electrical resistance with the compression ratio. Furthermore, rehealing with ~100% recovery of the compressive strength and electric conductivity was achieved under mild rehealing conditions, which is highly desired but has rarely been reported for electronic materials. The facile strategy for fabrication of rehealable monolithic polymer/GAs can open new possibilities for the sustainable development of composites with high electrical conductivity for various applications such as sensing, health monitoring, and movement detection.

关键词： Vitrimer Graphene aerogel Polyimine Rehealable Piezoresistive monolithic

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A 256 Gb/s electronic−photonic monolithically integrated transceiver in 45 nm CMOS

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Journal of Semiconductors 2024年第7期45卷 7-10页

作者： Ang Li Qianli Ma Yujun Xie Yongliang Xiong Yingjie Ma Han Liu Ye Jin Menghan Yang Guike Li Haoran Yin Minye Zhu Yang Qu Peng Wang Daofa Wang Wei Li Liyuan Liu Nan Qi Ming Li Key Laboratory of Optoelectronic Materials and Devices Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Institute of Semiconductors Chinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100190China School of Electronic Electrical and Communication EngineeringUniversity of Chinese Academy of SciencesBeijing 100049China

With the explosive development of artificial intelligence(AI),machine learning(ML),and high-performance comput-ing(HPC),the ever-growing data movement is asking for high density interconnects with higher bandwidth(BW),lower power and lower latency[1−3].The optical I/O leverages silicon photonic(SiPh)technology to enable high-density large-scale integrated photonics.

关键词： Gb/s transceiver monolithic

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monolithic white LED based on Al_xGa_(1-x) N/InyGa_(1-y)N DBR resonant-cavity

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Journal of Semiconductors 2009年第1期30卷 30-33页

作者：陈宇黄黎蓉朱珊珊 College of Optoelectronics Science & Engineering Huazhong University of Science and Technology Wuhan National Laboratory for Optoelectronics Huazhong University of Science and Technology

A monolithic white light-emitting diode （LED） with blue and yellow light active regions has been designed and studied. With the AlxGa1-xN/InyGa1-yN distributed Bragg reflector （DBR） resonant-cavity, the extraction... 详细信息

关键词： monolithic white light-emitting diode distributed Bragg reflector resonant-cavity

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A monolithic InP/SOI platform for integrated photonics

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Light(Science & Applications) 2021年第11期10卷 2143-2152页

作者： Zhao Yan Yu Han Liying Lin Ying Xue Chao Ma Wai Kit Ng Kam Sing Wong Kei May Lau Department of Electronic and Computer Engineering Hong Kong University of Science and TechnologyClear Water BayKowloonHong KongChina Department of Physics and William Mong Institute of Nano Science and Technology Hong Kong University of Science and TechnologyClear Water BayKowloonHong KongChina

The deployment of photonic integrated circuits(PICs)necessitates an integration platform that is scalable,high-throughput,cost-effective,and power-efficient.Here we present a monolithic InP on SOI platform to synergize the advantages of two mainstream photonic integration platforms:Si photonics and InP photonics.This monolithic InP/SOI platform is realized through the selective growth of both InP sub-micron wires and large dimension InP membranes on industry-standard(001)-oriented silicon-on-insulator(SOI)wafers.The epitaxial InP is in-plane,dislocation-free,site-controlled,intimately positioned with the Si device layer,and placed right on top of the buried oxide layer to form“InP-on-insulator”.These attributes allow for the realization of various photonic functionalities using the epitaxial InP,with efficient light interfacing between the III-V devices and the Si-based waveguides.We exemplify the potential of this InP/SOI platform for integrated photonics through the demonstration of lasers with different cavity designs including subwavelength wires,square cavities,and micro-disks.Our results here mark a critical step forward towards fully-integrated Si-based PICs.

关键词： SOI monolithic integration

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monolithic Coupling of the Pressure and Rigid Body Motion Equations in Computational Marine Hydrodynamics

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Journal of Marine Science and Application 2017年第4期16卷 375-381页

作者： Hrvoje Jasak Inno Gatin Vuko Vukcevic Faculty of Mechanical Engineering and Naval Architecture University of Zagreb 10000 Zagreb Croatia

In Fluid Structure Interaction(FSI) problems encountered in marine hydrodynamics, the pressure field and the velocity of the rigid body are tightly coupled. This coupling is traditionally resolved in a partitioned manner by solving the rigid body motion equations once per nonlinear correction loop, updating the position of the body and solving the fluid flow equations in the new configuration. The partitioned approach requires a large number of nonlinear iteration loops per time–step. In order to enhance the coupling, a monolithic approach is proposed in Finite Volume(FV) framework,where the pressure equation and the rigid body motion equations are solved in a single linear system. The coupling is resolved by solving the rigid body motion equations once per linear solver iteration of the pressure equation, where updated pressure field is used to calculate new forces acting on the body, and by introducing the updated rigid body boundary velocity in to the pressure equation. In this paper the monolithic coupling is validated on a simple 2D heave decay case. Additionally, the method is compared to the traditional partitioned approach(i.e. "strongly coupled" approach) in terms of computational efficiency and accuracy. The comparison is performed on a seakeeping case in regular head waves, and it shows that the monolithic approach achieves similar accuracy with fewer nonlinear correctors per time–step. Hence, significant savings in computational time can be achieved while retaining the same level of accuracy.

关键词： monolithic coupling pressure equation rigid body motion computational fluid dynamics marine hydrodynamics seakeeping

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A Ku-band high power density AlGaN/GaN HEMT monolithic power amplifier

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Journal of Semiconductors 2011年第8期32卷 70-73页

作者：戈勤陈晓娟罗卫军袁婷婷庞磊刘新宇 Key Laboratory of Microwave Devices & Integrated Circuit Institute of MicroelectronicsChinese Academy of Sciences

A high power density monolithic power amplifier operated at Ku band is presented utilizing a 0.3μm AlGaN/GaN HEMT production process on a 2-inch diameter semi-insulating（SI） 4H-SiC substrate by MOCVD. Over the 12-14 GHz frequency range,the single chip amplifier demonstrates a maximum power of 38 dBm（6.3 W）, a peak power added efficiency（PAE） of 24.2%and linear gain of 6.4 to 7.5 dB under a 10%duty pulse condition when operated at V_（ds） = 25 V and V_（gs） = -4 V.At these power levels,the amplifier exhibits a power density in excess of 5 W/mm.

关键词： Ku-band AlGaN/GaN HEMTs power amplifier monolithic power density

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A fully monolithic 0.18 μm SiGe BiCMOS power amplifier design

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Journal of Semiconductors 2011年第5期32卷 99-103页

作者：陈磊阮颖苏杰张书霖石春琦赖宗声 Institute of Microelectronics Circuit & System East China Normal University

A fully monolithic power amplifier （PA） for multi-mode front end IC integration is presented. The PA is fabricated in an IBM 7WL 0.18 μm SiGe BiCMOS process with all the matching networks integrated on a chip. After load-pull test to find the best power stage size and layout optimization, the measured results show that the PA can obtain a 24 dBm maximum output power at 2.4 GHz, the output 1 dB compression point is 21 dBm at 5 dBm input, and the PAE is 18%. This PA is complete on-chip tested without any bonding wires and on-board matching, targeting fully power module integration in multi-mode system on chip.

关键词： SiGe BiCMOS power amplifier monolithic multi-mode

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Design and fabrication of multi-channel photodetector array monolithic with arrayed waveguide grating

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Chinese Physics B 2016年第3期25卷 453-457页

作者：吕倩倩潘盼叶焓尹冬冬王玉冰杨晓红韩勤 State Key Laboratory of Integrated Optoelectronics Institute of Semiconductors Chinese Academy of Science

We have provided optical simulations of the evanescently coupled waveguide photodiodes integrated with a 13- channels AWGs. The photodiode could exhibit high internal efficiency by appropriate choice of layers geometry and refrac- tive index. Aseamless joint structure has been designed and fabricated for integrating the output waveguides of AWGs with the evanescently coupled waveguide photodiode array. The highest simulation quantum efficiency could achieve 92% when the matching layer thickfiess of the PD is 120 nm and the insertion length is 2 μm. The fabricated PD with 320-nm-thick match.ing layer and 2-μm-length insertion matching layer present a responsivity of 0.87 A/W.

关键词： photodetector array monolithic evanescent coupling arrayed waveguide grating

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Partial Oxidation of Methane to Syngas over monolithic Ni/γ-Al_2O_3 Catalyst——Effects of Rare Earths and Other Basic Promoters

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Journal of Rare Earths 2006年第4期24卷 451-455页

作者：马迪梅大江李璇龚茂初陈耀强 College of Chemistry Sichuan University Chengdu 610064 China

A series of monolithic Ni/γ-Al2O3 catalysts with and without basic promoters （Na, Sr, La, Ce） were prepared. Partial oxidation of methane （POM） to syngas was carried out in a continuous-flow, fixed-bed reactor. The influences of reaction conditions, including temperature, CH4/O2 ratio and space velocity, on the performance of the catalyst were investigated. The results show that at a high space velocity of 1 ×10^5 h^-1, optimal CH4 conversion can be obtained. Effects of promoters such as Na, Sr, Ce, La were also investigated, and the catalyst samples were characterized by means of temperature-programmed reduction and XRD techniques. XRD suggests that the addition of promoters has no influence on the crystal structure of Ni/γ-Al2O3 catalyst. The results show that the addition of a small amount of promoters improves the reducibility and activity of the catalyst. The side reaction CH4 ＋ 2O2→CO2 ＋ H2O, is fully restrained and 100% H2 selectivity is achieved when Ce and La are used as promoters, respectively.

关键词： promoter partial oxidation of methane syngas monolithic rare earths

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