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Study on Static Deflection Model of MEMS Capacitive Microwave Power Sensors

Chinese Journal of Electronics 2024年第5期33卷 1188-1195页

作者： Ye JIN Debo WANG College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology) Nanjing University of Posts and Telecommunications College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications

In this paper, a static deflection model of MEMS cantilever beam is proposed, which can better study the force deformation of micro-electro-mechanical system(MEMS) cantilever beam and the output characteristics of capacitive microwave power sensor. The deflection curve is used to describe the deformation of the cantilever beam and then the overload power and sensitivity of this power sensor are derived. It is found that the overload power decreases with the beam length, and increases with the initial height of beam. The sensitivity increases with the beam length, and has a linear growth relationship with the measuring electrode width. A MEMS dual-channel microwave power sensor is designed, fabricated and measured. At a microwave signal frequency of 10 GHz, the sensitivity of the sensor is measured to be 0.11 V/W for the thermoelectric detection channel and 65.17 fF/W for the capacitive detection channel. The sensitivity calculated by the lumped model is 92.93 fF/W, that by the pivot model is 50.88 fF/W,and that by the deflection model proposed in this work is 75.21 fF/W. Therefore, the theoretical result of the static deflection model is more consistent with the measured result and has better accuracy than the traditional lumped model and pivot model.

关键词： Microwave measurement micromechanical devices Microelectromechanical systems Sensitivity Voltage measurement Accuracy Deformation Micro-electro-mechanical system (MEMS) cantilever beam Static deflection model Power sensor Overload power

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Quasi-static Finite-element Analysis For MEMS Transmission Lines

Quasi-static Finite-element Analysis For MEMS Transmission L...

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1999 International Conference on Computational Electromagnetics and Its Applications(ICCEA’99)

作者： Wang Ying Zhu Shouzheng Lai Zongsheng Dept.Of EE East China Normal University

ISBN: (纸本)0780358023

＜正＞Microelectromechnical systems（MEMS） technology is considered as one of key technologies in the new-coming century,In this paper,the quasi-static finite element method （FEM） is applied to analyze MEMS microwave transmission lines,the finite-grounded coplanar *** capacitance per unit length and intrinsic impedance of the line are derived. Dillerent materials are calculated to find the proper design parameters.

关键词： micromechanical devices coplanar waveguides capacitance electric impedance waveguide theory coplanar transmission lines transmission line theory finite element analysis MEMS transmission lines quasi-static finite-element analysis microelectromechanical systems FEM microwave transmission lines finite-grounded coplanar waveguide capacitance per unit length intrinsic impedance

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CMP Service for Prototyping and Low Volume Production

CMP Service for Prototyping and Low Volume Production

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2005 6th International Conference on ASIC

作者： Kholdoun TORKI Bernard COURTOIS CMP 46 Avenue Felix VIALLET38031 Grenoble CedexFrance

＜正＞CMP aims at providing Universities, Research Laboratories and Industries with the possibility to have their integrated circuits projects fabricated for prototyping and low volume production. Presently,users are serviced for CMOS double layer poly/double layer metal（DLP/DLM） 0.8,DLM/TLM 0.6μ,DLP/4LM 0.35μ,SLP/6LM 0.18μ,SLP/6LM 0.13μ,SLP/7LM 90nm,BiCMOS DLP/DLM 0.8μ, SiGe 0.35μSLP/5LM,SiGe.C 0.25μSLP/5LM and GaAs HEMT 0.2μ.About 40 multi-project runs are offered per year. Micro Electro Mechanical Systems（MEMS） are also provided in standard CMP runs in CMOS DLP/DLM 0.8μ0.6μ,BiCMOS DLP/DLM 0.8μand HEMT GaAs 0.2μ,using compatible front-side bulk micromachining. MUMPS processes are offered as surface micro-machining allowing integrating MEMS only microstructures.

关键词： Prototypes Production BiCMOS integrated circuits Gallium arsenide HEMTs micromechanical devices Educational institutions Laboratories Textile industry Silicon germanium

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