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The Bipolar field-effect transistor: *** Channel Electrochemical Current Theory (Two-mos-Gates on Pure-Base)

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Journal of Semiconductors 2008年第1期29卷 1-11页

作者：揭斌斌薩支唐北京大学北京100871 佛罗里达大学美国佛罗里达州Gainesville FL32605 中国科学院北京100871

This paper describes the short channel theory of the bipolar field-effect transistor （BiFET） by partitioning the transistor into two sections,the source and drain sections,each can operate as the electron or hole emitter or collector under specific combinations of applied terminal voltages. Analytical solution is obtained in the source and drain sections by separating the two-dimensional trap-free Shockley Equations into two one-dimensional equations parametrically coupled via the surface-electric-potential and by using electron current continuity and hole current continuity at the boundary between the emitter and collector sections. Total and electron-hole-channel components of the output and transfer currents and conductances, and the electrical lengths of the two sections are computed and presented in graphs as a function of the D. C. terminal voltages for the model transistor with two identical and connected metal-oxide-silicon-gates （mos-gates） on a thin pure-silicon base over practical ranges of thicknesses of the silicon base and gate oxide. Deviations of the long physical channel currents and conductances from those of the short electrical channels are reported.

关键词： bipolar field-effect transistor theory mos field-effect transistor simultaneous electron and hole surface andvolume channels surface potential short channel theory double-gate pure-base

The Bipolar field-effect transistor:Ⅳ.Short Channel Drift-Diffusion Current Theory(Two-mos-Gates on Pure-Base)

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Journal of Semiconductors 2008年第2期29卷 193-200页

作者：揭斌斌薩支唐北京大学北京100871

This paper gives the short channel analytical theory of the bipolar field-effect transistor （BiFET） with the drift and diffusion currents separately computed in the analytical theory. As in the last-month paper which represented the drift and diffusion current by the single electrochemical （potential-gradient） current, the two-dimensional transistor is partitioned into two sections, the source and drain sections, each can operate as the electron or hole emitter or collector under specific combinations of applied terminal voltages. Analytical solution is then obtained in the source and drain sections by separating the two-dimensional trap-free Shockley Equations into two one-dimensional equations parametrically coupled via the surface-electric-potential and by using electron current continuity and hole current continuity at the boundary between the emitter and collector sections. Total and the drift and diffusion components of the electron-channel and hole-channel currents and output and transfer conductances, and the electrical lengths of the two sections are computed and presented in graphs as a function of the D. C. terminal voltages for the model transistor with two identical and connected metal-oxide-silicon-gates （mos-gates） on a thin pure-silicon base over practical ranges of thicknesses of the silicon base and gate oxide. Deviations of the two-section short-channel theory from the one-section long-channel theory are described.

关键词： bipolar field-effect transistor theory mos field-effect transistor simultaneous electron and hole surface and volume channels surface potential two-section short-channel theory double-gate pure-base

The Bipolar field-effect transistor:***-Diffusion Current Theory(Two-mos-Gates on Pure-Base)

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Journal of Semiconductors 2007年第12期28卷 1849-1859页

作者：薩支唐揭斌斌中国科学院北京大学北京100871

This paper describes the drift-diffusion theory of the bipolar field-effect transistor （BiFET） with two identical and connected metal-oxide-silicon-gates （mos-gates） on a thin-pure-base. Analytical solution is obtained by partitioning the two-dimensional transistor into two one-dimensional problems coupled by the parametric sur- face-electric-potential. Total and component output and transfer currents and conductances versus D. C. voltages from the drift-diffusion theory, and their deviations from the electrochemical （quasi-Fermi） potential-gradient theory,are presented over practical ranges of thicknesses of the silicon base and gate oxide. A substantial contri- bution from the longitudinal gradient of the square of the transverse electric field is shown.

关键词： bipolar field-effect transistor theory mos field-effect transistor simultaneous electron and holesurface and volume channels surface potential~ longitudinal gradient of transverse electric field

The Bipolar Theory of the field-effect transistor:*** Fundamental Physics and Theory(All Device Structures)

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Journal of Semiconductors 2008年第4期29卷 613-619页

作者：薩支唐揭斌斌佛罗里达大学北京大学北京100871

This paper describes the foundation underlying the device physics and theory of the semiconductor field effect transistor which is applicable to any devices with two carrier species in an electric field. The importance of the boundary conditions on the device current-voltage characteristics is discussed. An illustration is given of the transfer DCIV characteristics computed for two boundary conditions,one on electrical potential,giving much higher drift-limited parabolic current through the intrinsic transistor, and the other on the electrochemical potentials, giving much lower injection-over-thebarrier diffusion-limited current with ideal 60mV per decade exponential subthreshold roll-off, simulating electron and hole contacts. The two-mos-gates on thin pure-body silicon field-effect transistor is used as examples

关键词： bipolar field-effect transistor theory mos field-effect transistor electric potential electrochemical potential boundary conditions

The Theory of field-effect transistors:XI. The Bipolar Electrochemical Currents(1-2-mos-Gates on Thin-Thick Pure-Impure Base)

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Journal of Semiconductors 2008年第3期29卷 397-409页

作者：薩支唐揭斌斌中国科学院外籍院士北京大学北京100871

The field-effect transistor is inherently bipolar, having simultaneously electron and hole surface and volume channels and currents. The channels and currents are controlled by one or more externally applied transverse electric fields. It has been known as the unipolar field-effect transistor for 55-years since Shockley＇s 1952 invention,because the electron-current theory inevitably neglected the hole current from over-specified internal and boundary conditions, such as the electrical neutrality and the constant hole-electrochemical-potential, resulting in erroneous solutions of the internal and terminal electrical characteristics from the electron channel current alone, which are in gross error when the neglected hole current becomes comparable to the electron current, both in subthreshold and strong inversion. This report presents the general theory, that includes both electron and hole channels and currents. The rectangular （ x, y, z） parallelepiped transistors,uniform in the width direction （z-axis）,with one or two mos gates on thin and thick,and pure and impure base, are used to illustrate the two-dimensional effects and the correct internal and boundary conditions for the electric and the electron and hole electrochemical potentials. Complete analytical equations of the DC current-voltage characteristics of four common mos transistor structures are derived without over-specification： the 1-gate on semi-infinite-thick impure-base （the traditional bulk transistor）, the 1-gate on thin impure-silicon layer over oxide-insulated silicon bulk （SOI） ,the 1-gate on thin impure-silicon layer deposited on insulating glass （SOI TFT）, and the 2-gates on thin pure-base （FinFETs）.

关键词： bipolar field-effect transistor theory mos field-effect transistor simultaneous electron and hole surface and volume channels and currents surface potential two-section short-channel theory double-gate impure-base theory