The Theory of Field-Effect Transistors:XI. The Bipolar Electrochemical Currents(1-2-MOS-Gates on Thin-Thick Pure-Impure Base)

作     者：薩支唐 揭斌斌 Sah Chih-Tang;Jie Binbin

作者机构：中国科学院外籍院士 北京大学北京100871 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2008年第29卷第3期

页      面：397-409页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：CTSAH Associates(CTSA)资助~~ 

主　　题：bipolar field-effect transistor theory MOS field-effect transistor simultaneous electron and hole surface and volume channels and currents surface potential two-section short-channel theory double-gate impure-base theory 

摘      要：The field-effect transistor is inherently bipolar, having simultaneously electron and hole surface and volume channels and currents. The channels and currents are controlled by one or more externally applied transverse electric fields. It has been known as the unipolar field-effect transistor for 55-years since Shockley＇s 1952 invention,because the electron-current theory inevitably neglected the hole current from over-specified internal and boundary conditions, such as the electrical neutrality and the constant hole-electrochemical-potential, resulting in erroneous solutions of the internal and terminal electrical characteristics from the electron channel current alone, which are in gross error when the neglected hole current becomes comparable to the electron current, both in subthreshold and strong inversion. This report presents the general theory, that includes both electron and hole channels and currents. The rectangular （ x, y, z） parallelepiped transistors,uniform in the width direction （z-axis）,with one or two MOS gates on thin and thick,and pure and impure base, are used to illustrate the two-dimensional effects and the correct internal and boundary conditions for the electric and the electron and hole electrochemical potentials. Complete analytical equations of the DC current-voltage characteristics of four common MOS transistor structures are derived without over-specification： the 1-gate on semi-infinite-thick impure-base （the traditional bulk transistor）, the 1-gate on thin impure-silicon layer over oxide-insulated silicon bulk （SOI） ,the 1-gate on thin impure-silicon layer deposited on insulating glass （SOI TFT）, and the 2-gates on thin pure-base （FinFETs）.