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Impurity Deionization Effects on Surface Recombination DC Current-Voltage Characteristics in mos transistors

Journal of Semiconductors 2010年第12期31卷 1-10页

作者：陈祖辉揭斌斌薩支唐 Lee-Kuan-Yew Postdoctoral Fellow 2007-2010Nanyang Technological University Department of Physics Xiamen University CTSAH Associates Gainesville

Impurity deionization on the direct-current current-voltage characteristics from electron-hole recombi- nation （R-DCIV） at SiO2/Si interface traps in mos transistors is analyzed using the steady-state Shockley-Read-Hall recombination kinetics and the Fermi distributions for electrons and holes. Insignificant distortion is observed over 90% of the bell-shaped R-DCIV curves centered at their peaks when impurity deionization is excluded in the theory. This is due to negligible impurity deionization because of the much lower electron and hole concentrations at the interface than the impurity concentration in the 90% range.

关键词： recombination current impurity deionization interface traps mos transistors

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Total dose radiation effects on SOI Nmos transistors with different layouts

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Chinese Physics C 2008年第8期32卷 645-648页

作者：田浩张正选贺威俞文杰王茹陈明 Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Partially-depleted Silicon-On-Insulator Negative Channel Metal Oxide Semiconductor （SOI Nmos） transistors with different layouts are fabricated on radiation hard Separation by IMplanted OXygen （SIMOX） substrate and tested using 10 keV X-ray radiation sources. The radiation performance is characterized by transistor threshold voltage shift and transistor leakage currents as a function of the total dose up to 2.0×10^6 rad（Si）. The results show that the total dose radiation effects on Nmos devices are very sensitive to their layout structures.

关键词： SIMOX SOI total dose radiation effect mos transistors

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Study of total ionizing dose radiation effects on enclosed gate transistors in a commercial Cmos technology

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Chinese Physics B 2007年第12期16卷 3760-3765页

作者：李冬梅王志华皇甫丽英勾秋静 Department of Electronic Engineering Tsinghua University Belting 100084 China Institute of Microelectronics Tsinghua University Beijing 100084 China

This paper studies the total ionizing dose radiation effects on mos （metal-oxide-semiconductor） transistors with normal and enclosed gate layout in a standard commercial Cmos （compensate mos） bulk process. The leakage current, threshold voltage shift, and transconductance of the devices were monitored before and after γ-ray irradiation. The parameters of the devices with different layout under different bias condition during irradiation at different total dose are investigated. The results show that the enclosed layout not only effectively eliminates the leakage but also improves the performance of threshold voltage and transconductance for Nmos （n-type channel mos） transistors. The experimental results also indicate that analogue bias during irradiation is the worst case for enclosed gate Nmos. There is no evident different behaviour observed between normal Pmos （p-type channel mos） transistors and enclosed gate Pmos transistors.

关键词： mos transistors radiation effects total dose layout

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