Impurity Deionization Effects on Surface Recombination DC Current-Voltage Characteristics in MOS Transistors

作     者：陈祖辉 揭斌斌 薩支唐 

作者机构：Lee-Kuan-Yew Postdoctoral Fellow2007-2010Nanyang Technological University Department of PhysicsXiamen University CTSAH AssociatesGainesville 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2010年第31卷第12期

页      面：1-10页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0703[理学-化学] 0702[理学-物理学] 

基　　金：This investigation is supported by the CTSAH Associates(CTSA) founded by the late Linda Su-Nan Chang Sah 

主　　题：recombination current impurity deionization interface traps MOS transistors 

摘      要：Impurity deionization on the direct-current current-voltage characteristics from electron-hole recombi- nation （R-DCIV） at SiO2/Si interface traps in MOS transistors is analyzed using the steady-state Shockley-Read-Hall recombination kinetics and the Fermi distributions for electrons and holes. Insignificant distortion is observed over 90% of the bell-shaped R-DCIV curves centered at their peaks when impurity deionization is excluded in the theory. This is due to negligible impurity deionization because of the much lower electron and hole concentrations at the interface than the impurity concentration in the 90% range.