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Al-doped ZnO/WO_(3) heterostructure films prepared by magnetron sputtering for isopropanol sensors

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Rare metals 2024年第1期43卷 247-256页

作者： Wei-Xiang Gao Xue-Ting Chang Xiao-Jie Zhu Jun-Feng Li Ying-Chang Jiang Dong-Sheng Wang Chuan-Xiao Yang Shi-Bin Sun College of Logistics Engineering Shanghai Maritime UniversityShanghai 201306China College of Ocean Science and Engineering Shanghai Maritime UniversityShanghai 201306China Institute of Logistics Science and Engineering Shanghai Maritime UniversityShanghai 201306China

metal oxide semiconductors(MOSs) are ideal sensing materials for detecting volatile organic compounds due to their low cost, diversity, high stability, and ease of production. However, it remains a grand challenge to develop the MOSs-based gas sensors for sensing isopropanol with desired performance via a simple, effective,and controllable method. Herein, we reported the preparation of the Al-doped Zn O(AZO)/WO_(3) heterostructure films by directly depositing the AZO coating onto the WO_(3) coating using a strategy of magnetron sputtering. The AZO/WO_(3) heterostructure films were constructed by numbers of irregular nanoparticles that were interconnected with each other. The AZO/WO_(3) heterostructure films-based gas sensors exhibited excellent isopropanolsensing performance with high response, promising selectivity, low detection limit, fast response rate, wide detection range, and ideal reproducibility. The promising isopropanol-sensing performance of the AZO/WO_(3) heterostructure films arises mainly from their high uniformity, unique microstructures with high surface roughness,and the construction of the heterostructure between the AZO and WO_(3) coatings. This work provides a versatile approach to prepare the MOSs-based heterostructure films for assembling the gas sensors.

关键词： metal oxide semiconductors Gas sensors Aldoped ZnO/WO_(3) Heterostructure films Isopropanol Magnetron sputtering

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Extraction of Channel Length Independent Series Resistance for Deeply Scaled metal-oxide-Semiconductor Field-Effect Transistors

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Chinese Physics Letters 2014年第9期31卷 141-143页

作者：马丽娟纪小丽陈原聪夏好广朱晨昕郭强闫锋 School of Electronic Science and Engineering Nanjing University Nanjing 210093 Wuhan Xinxin Semiconductor Manufacturing Corporation Wuhan 430205

The recently developed four Rsd extraction methods from a single device, involving the constant-mobility method,the direct Id Vgs method, the conductance method and the Y-tunctlon metnoa, are evaluatea on 32 nm n-channel metal-oxide-semiconductor field-effect transistors （nMOSFETs）. It is found that Rsd achieved from the constant- mobility method exhibits the channel length independent characteristics. The L-dependent Rsd extracted from the other three methods is proven to be associated with the gate-voltage-induced mobility degradation in the extraction procedures. Based on L-dependent behaviors of Rsd, a new method is proposed for accurate series resistance extraction on deeply scaled MOSFETs.

关键词： metal oxide semiconductor field-effect transistors RESEARCH EXTRACTION techniques ADMITTANCE (Electricity) FIELD-effect transistors metal oxide semiconductors

Silicon Light Emitting Devices in CMOS Technology

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Chinese Physics Letters 2007年第1期24卷 265-267页

作者：陈弘达刘海军刘金彬顾明黄北举 State Key Lab on Integrated Optoelectronics Institute of Semiconductors Chinese Academy of Sciences Beijing 100083

Two silicon light emitting devices with different structures are realized in standard 0.35pro complementary metal-oxide-semiconductor （CMOS） technology. They operate in reverse breakdown mode and can be turned on at 8.3 V. Output optical powers of 13.6nW and 12.1 n W are measured at 10 V and l OOmA, respectively~ and both the calculated light emission intensities are more than 1 mW/cm^2. The optical spectra of the two devices are between 600-790 nm with a clear peak near 760 nm.

关键词： LIGHT emitting diodes metal oxide semiconductors COMPLEMENTARY metal oxide semiconductors SPECTRUM analysis

Simple point contact WO_3 sensor for NO_2 sensing and relevant impedance analysis

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International Journal of Minerals,metallurgy and Materials 2012年第12期19卷 1142-1148页

作者： Wu-bin Gao Yun-han Ling Xu Liu Jia-lin Sun School of Materials Science and Engineering University of Science and Technology Beijing Beijing 100083 China Department of Materials Science and Engineering Tsinghua University Beijing 100084 China

A simple and new point contact tungsten trioxide （WO3） sensor, which can be prepared by the oxidation of tungsten filaments via in-situ induction heating, likely detects low concentration （ppm level） environmental pollutants such as NO2. X-ray diffraction （XRD） and field emission scanning electron microscopy （FE-SEM） were applied to characterize the phase and the microstructure of the samples, respec-tively. It was found that the synthesized WO3 films exhibited a monoclinic phase and were composed of hierarchical microcrystals and nanocrystals. The point contact WO3 sensor （W-WO3-W） showed rectifying characteristics and an ideal sensing performance of about 110 C. A single semicircle in Nyquist plots was recorded by electrochemical impedance spectroscopy （EIS） at a relatively low temperature of 150 C but faded away above 200 C, which revealed that the sensing process was governed by a determining factor, i.e., grain boundaries at the contact site.

关键词： gas sensors tungsten trioxide metal oxide semiconductors thin fills microcrystals nanocrystals electrochemical impedancespectroscopy (EIS)

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Room temperature H2S micro-sensors with anti-humidity properties fabricated from NiO-In2O3 composite nanofibers

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Science Bulletin 2013年第07期58卷 821-826页

作者： YUE XueJun HONG TianSheng YANG Zhou HUANG ShuangPing Key Laboratory of Key Technology on Agricultural Machine and Equipment Ministry of EducationCollege of EngineeringSouth China Agricultural University

NiO-In2O3 composite nanofibers are synthesized via electrospinning and calcining ***-sensors are fabricated by sputtering Pt electrodes on Si chips to form sensor substrates,and then spinning the NiO-In2O3 composite nanofibers onto the sensor substrate *** as-fabricated micro-sensors exhibit excellent H2S sensing properties at room *** sensitivity of the micro-sensors is up to 6 when the sensors are exposed to 3μL/LH2S,and the corresponding response and recovery times are 14 and 22 s,*** micro-sensors also exhibit high selectivity and good ***,the micro-sensors can operate at various humidity *** sensitivity of the micro-sensors is 3.8 to 3μL/LH2S at 75% relative *** characteristics make the micro-sensors good candidates for practical H2S sensors with high performance.

关键词： gas sensors nanofibers micro-sensors metal oxide semiconductors nanomaterials

Trap States in Al2O3 InAlN/GaN metal-oxide-Semiconductor Structures by Frequency-Dependent Conductance Analysis

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Chinese Physics Letters 2014年第3期31卷 137-139页

作者： ZHANG Peng ZHAO Sheng-Lei XUE Jun-Shuai ZHANG Kai MA Xiao-Hua ZHANG Jin-Cheng HAO Yue Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices School of Microelectronics Xidian University Xi'an 710071

We present a detailed analysis of the trap states in atomic layer deposition Al2O3/InAlN/GaN high electron mobility transistors grown by pulsed metal organic chemical vapor deposition. Trap densities, trap energies and time constants are determined by frequency-dependent conductance measurements. A high trap density of up to 1.6×1014 cm？2eV？1 is observed, which may be due to the lack of the cap layer causing the vulnerability to the subsequent high temperature annealing process.

关键词： metal oxide semiconductors RESEARCH ATOMIC layer deposition HIGH electron mobility transistors CHEMICAL vapor deposition PHYSICS research

Origin of Electron and Hole Charging Current Peaks in Nanocrystal-Si Quantum Dot Floating Gate MOS Structure

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Chinese Physics Letters 2009年第3期26卷 222-225页

作者：黄健陈坤基方忠慧郭四华王祥丁宏林李伟黄信凡 National Laboratory of Solid State Microstructures and Department of Physics Nanjing University Nanjing 210093

The nanocrystal-Si quantum dot （nc-Si QD） floating gate MOS structure is fabricated by using plasma-enhanced chemical vapour deposition （PECVD） and furnace oxidation technology. The capacitance hysteresis in capacitancevoltage （C - V） measurements confirm the charging effect of nc-Si QDs. Asymmetric charging current peaks both for electrons and holes have been observed in current-voltage （I - V） measurements at room temperature for the first time. The characteristic and the origin of these current peaks in this nc-Si QD MOS structure is in- vestigated systematically. Moreover, the charge density （10^-7 C/cm^2） calculated from the charging current peaks in the I - V measurements at different sweep rates shows that each quantum dot is charged by one carrier. The difference of charging threshold voltages between the electrons and holes charging peaks, △VG, can be explained by the quantum confinement effect of the nc-Si dots in size of about 3.5 nm.

关键词： metal oxide semiconductors MICROFABRICATION ELECTRIC charge & distribution ELECTRIC currents NANOCRYSTALS QUANTUM dots STRUCTURAL analysis (Science) CHEMICAL vapor deposition

Physical and Chemical Properties of TiOxNy Prepared by Low-Temperature Oxidation of Ultrathin metal Nitride Directly Deposited on SiO2

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Chinese Physics Letters 2009年第3期26卷 193-195页

作者：韩跃平韩炎 National Key Laboratory for Electronic Measurement Technology North University of China Taiyuan 030051

Physical and chemical properties of titanium oxynitride （TiOxNy ） formed by low-temperature oxidation of titanium nitride （TIN） layer are investigated for advanced metal-oxide-semiconductor （MOS） gate dielectric application. TiOxNy exhibits polycrystalline properties after the standard thermal process for MOS device fabrication, showing the preferred orientation at [200]. Superior electrical properties of TiOxNy can be maintained before and after the annealing, probably due to the nitrogen incorporation in the oxide bulk and at the interface. Naturally formed transition layer between TiOxNy and SiO2 is also confirmed.

关键词： THIN-FILMS Oxidation metal oxide semiconductors Preferred orientation ultrathin heat treatment chemical properties chemical and physical properties thin films

Room temperature H_2S micro-sensors with anti-humidity properties fabricated from NiO-In_2O_3 composite nanofibers

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Science China(Technological Sciences) 2013年第3期56卷 821-826页

NiO-In2O3 composite nanofibers are synthesized via electrospinning and calcining techniques. Micro-sensors are fabricated by sputtering Pt electrodes on Si chips to form sensor substrates, and then spinning the NiO-In2O3 composite nanofibers onto the sensor substrate surface. The as-fabricated micro-sensors exhibit excellent H2S sensing properties at room temperature. The sensi- tivity of the micro-sensors is up to 6 when the sensors are exposed to 3 μL/L HzS, and the corresponding response and recovery times are 14 and 22 s, respectively. The micro-sensors also exhibit high selectivity and good stability. Especially, the micro-sensors can operate at various humidity conditions. The sensitivity of the micro-sensors is 3.8 to 3 μL/L HzS at 75% relative humidity. These characteristics make the micro-sensors good candidates for practical H2S sensors with high performance.

关键词： gas sensors nanofibers micro-sensors metal oxide semiconductors nanomaterials