Trap States in Al2O3 InAlN/GaN Metal-Oxide-Semiconductor Structures by Frequency-Dependent Conductance Analysis

作     者：ZHANG Peng ZHAO Sheng-Lei XUE Jun-Shuai ZHANG Kai MA Xiao-Hua ZHANG Jin-Cheng HAO Yue 

作者机构：Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices School of Microelectronics Xidian University Xi'an 710071 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2014年第31卷第3期

页      面：137-139页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 080503[工学-材料加工工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

基　　金：Supported by the National Natural Science Foundation of China under Grant Nos 61334002 and K5051325020 

摘      要：We present a detailed analysis of the trap states in atomic layer deposition Al2O3/InAlN/GaN high electron mobility transistors grown by pulsed metal organic chemical vapor deposition. Trap densities, trap energies and time constants are determined by frequency-dependent conductance measurements. A high trap density of up to 1.6×1014 cm？2eV？1 is observed, which may be due to the lack of the cap layer causing the vulnerability to the subsequent high temperature annealing process.