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Effects of TMIn flow rate during quantum barrier growth on multi-quantum well material properties and device performance of GaN-based laser diodes

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CHINESE PHYSICS B 2024年第12期33卷 128102-128102页

作者： Chen, Zhenyu Zhao, Degang Liang, Feng Liu, Zongshun Yang, Jing Chen, Ping Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China Univ Chinese Acad Sci Coll Mat Sci & Optoelect Technol Beijing 100049 Peoples R China Univ Chinese Acad Sci Ctr Mat Sci & Optoelect Engn Beijing 100049 Peoples R China

Multidimensional influences of indium composition in barrier layers on GaN-based blue laser diodes (LDs) are discussed from both material quality and device physics perspectives. LDs with higher indium content in the barriers demonstrate a notably lower threshold current and shorter lasing wavelength compared to those with lower indium content. Our experiments reveal that higher indium content in the barrier layers can partially reduce indium composition in the quantum wells, a novel discovery. Employing higher indium content barrier layers leads to improved luminescence properties of the MQW region. Detailed analysis reveals that this improvement can be attributed to better homogeneity in the indium composition of the well layers along the epitaxy direction. InGaN barrier layers suppress the lattice mismatch between barrier and well layers, thus mitigating the indium content pulling effect in the well layers. In supplement to experimental analysis, theoretical computations are performed, showing that InGaN barrier structures can effectively enhance carrier recombination efficiency and optical confinement of LD structure, thus improving the output efficiency of GaN-based blue LDs. Combining these theoretical insights with our experimental data, we propose that higher indium content barriers effectively enhance carrier recombination efficiency and indium content homogeneity in quantum well layers, thereby improving the output performance of GaN-based blue LDs.

关键词： laser diodes MOCVD quantum wells III-V semiconductors

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Thermal analysis of GaN laser diodes in a package structure

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Chinese Physics B 2012年第8期21卷 264-269页

作者：冯美鑫张书明江徳生刘建平王辉曾畅李增成王怀兵王峰杨辉 State Key Laboratory on Integrated Optoelectronics Institute of SemiconductorsChinese Academy of Sciences Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of Sciences

Using the finite-element method, the thermal resistances of GaN laser diode devices in a TO 56 package for both epi-up configuration and epi-down configuration are calculated. The effects of various parameters on the thermal characteristics are analysed, and the thicknesses of the AlN submount for both epi-up configuration and epi-down configuration are optimized. The obtained result provides a reference for the parameter selection of the package materials.

关键词： laser diodes thermal GaN

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High power laser diodes of 2 μm AlGaAsSb/InGaSb type I quantum-wells

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Journal of Semiconductors 2015年第5期36卷 50-53页

作者：廖永平张宇邢军亮魏思航郝宏玥王国伟徐应强牛智川 State Key Laboratory for Superlattices and Microstructures Institute of SemiconductorsChinese Academy of Sciences Synergetic Innovation Center of Quantum Information and Quantum Physics University of Science and Technology of China

2μm A1GaAsSb/InGaSb type-I quantum-well high-power laser diodes （LDs） are grown using molec- ular beam epitaxy. Stripe-type waveguide single LD （single emitter） and array LD （four emitters） devices without facet coatings are fabricated. For the single LDs （single emitter） device, the maximum output power under contin- uous wave （CW） operation is 0.5 W at 10℃ with a threshold current density of 150 A/cm^2 and a slope efficiency of 0.17 W/A, the output powers under the pulse mode in the 5% duty cycles are much higher, up to 0.98 W. For the array LD devices, the maximum output powers are 1.02 W under the CW mode and 3.03 W under the pulse mode at room temperature.

关键词： laser diodes arrays emitters quantum wells

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Thermal investigation of high-power GaAs-based laser diodes

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Journal of Semiconductors 2017年第5期38卷 59-61页

作者： Jichuan Liu Cuiluan Wang Suping Liu Xiaoyu Ma National Engineering Research Center for Optoelectronic Devices Institute of SemiconductorChinese Academy of Sciences

The thermal characteristics of high-power AlGaAs/GaAs laser diodes（LDs） at high current（2-10 A）are studied with electrical transient *** temperature rise increases linearly with the *** thermal resistance of chip is the largest proportion of total thermal *** increasing the width of the chip from 500 to 800 fim,the temperature rise and thermal resistance decrease by 8.5%and 8.8%,respectively.

关键词： laser diodes high power temperature rise thermal resistance electrical transient method

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Al-free cladding-layer blue laser diodes with a low aspect ratio in far-field beam pattern

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Journal of Semiconductors 2018年第8期39卷 57-61页

作者： Meixin Feng Qian Sun Jianping Liu Zengcheng Li Yu Zhou Hongwei Gao Shuming Zhang Hui Yang Key Laboratory of Nano-Devices and Applications Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO) Chinese Academy of Sciences School of Nano Technology and Nano Bionics University of Science and Technology of China

c-plane GaN-based blue laser diodes（LDs） were fabricated with Al-free cladding layers（CLs） and deepened etching depth of mesa structure, so the aspect ratio of the far-field pattern（FFP） of the laser beam can be reduced to as low as 1.7, which is nearly the same as conventional AlGa In P-based red LDs. By using GaN CLs,the radiation angle of the laser beam θ⊥ is only 10.1° in the direction perpendicular to the junction plane. After forming a deeply etched mesa, the beam divergence angle parallel to the junction plane of FFP, θ;, increases from4.9° to 5.8°. After using the modified structure, the operation voltage of LD is effectively reduced by 2 V at an injection current of 50 mA, but the threshold current value increases. The etching damage may be one of the main reasons responsible for the increase of the threshold current.

关键词： Al-free cladding layers far-field beam patterns aspect ratio laser diodes

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Suppression of electron leakage in 808 nm laser diodes with asymmetric waveguide layer

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Journal of Semiconductors 2016年第1期37卷 69-72页

作者：李翔赵德刚江德生陈平刘宗顺朱建军侍铭赵丹梅刘炜 State Key Laboratory on Integrated Optoelectronics Institute of Semiconductors Chinese Academy of SciencesBeijing 100083 China

Electron leakage in GaAs-based separately confined heterostructure 808 nm laser diodes （SCH LDs） has a serious influence on device performance. Here, in order to reduce the energy of electrons injected into the quantum well （QW）, an A1GaAs interlayer with a smaller A1 component is added between the active region and the n-side waveguide. Numerical device simulation reveals that when the Al-composition of the A1GaAs interlayer and its thickness are properly elected, the electron leakage is remarkably depressed and the characteristics of LDs are improved, owing to the reduction of injected electron energy and the improvement of QW capture efficiency.

关键词： quantum well laser diodes electron leakage electron energy

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Experimental Investigation of the Spectrum Characteristics of laser diodes Under Low-Frequency Modulation

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Chinese Journal of lasers 1999年第1期 2-7页

作者： LUO Zhongsheng ZHANG Meidun (National Laboratory on Local Fiber optic Communication Networks and Advance Optical Communication Systems, Shanghai Jiao Tong University, Shanghai, 200030, China)

１ＩｎｔｒｏｄｕｃｔｉｏｎＴｈｅｃｈａｒａｃｔｅｒｉｓｔｉｃｓｏｆｌａｓｅｒｄｉｏｄｅｓｗｈｏｓｅｉｎｊｅｃｔｉｏｎｃｕｒｅｎｔｉｓｍｏｄｕｌａｔｅｄｄｉｒｅｃｔｌｙｂｙｈｉｇｈｆｒｅｑｕｅｎｃｙｓｉｇｎａｌｈａｖｅ... 详细信息

１ＩｎｔｒｏｄｕｃｔｉｏｎＴｈｅｃｈａｒａｃｔｅｒｉｓｔｉｃｓｏｆｌａｓｅｒｄｉｏｄｅｓｗｈｏｓｅｉｎｊｅｃｔｉｏｎｃｕｒｅｎｔｉｓｍｏｄｕｌａｔｅｄｄｉｒｅｃｔｌｙｂｙｈｉｇｈｆｒｅｑｕｅｎｃｙｓｉｇｎａｌｈａｖｅｂｅｅｎｉｎｔｅｎｓｉｖｅｌｙｒｅ...

关键词： laser diodes low frequency modulation longitudinal mode spectrum

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Material Growth and Device Fabrication of GaAs Based 1.3μm GaInNAs Quantum Well laser diodes

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Journal of Semiconductors 2005年第9期26卷 1860-1864页

作者：牛智川韩勤倪海桥杨晓红徐应强杜云张石勇彭红玲赵欢吴东海李树英贺振宏任正伟吴荣汉中国科学院半导体研究所半导体超晶格国家重点实验室北京100083 中国科学院半导体研究所国家光电子工艺中心北京100083

Material growth and device fabrication of the first 1.3μm quantum well （QW） edge emitting laser diodes in China are reported. Through the optimization of the molecular beam epitaxy （MBE） growth conditions and the tuning of the indium and nitrogen composition of the GalnNAs QWs, the emission wavelengths of the QWs can be tuned to 1.3μm. Ridge geometry waveguide laser diodes are fabricated. The lasing wavelength is 1.3μm under continuous current injection at room temperature with threshold current of 1kA/cm^2 for the laser diode structures with the cleaved facet mirrors. The output light power over 30mW is obtained.

关键词： GaAs based materials GalnNAs quantum wells molecular beam epitaxy laser diodes

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Robust YAG:Ce single crystal for ultra-high efficiency laser lighting

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Journal of Rare Earths 2022年第5期40卷 717-724,I0002页

作者： Yaqian Zhang Jianming Liu Yujie Zhang Haisheng Yang Yanxia Yu Qingyun He Xiaojuan Liang Yongfu Liu Weidong Xiang College of Chemistry and Materials Engineering Wenzhou UniversityWenzhou 325035China Ningbo Institute of Materials Technology and Engineering Chinese Academy of SciencesNingbo 315201China

At present,solid-state laser-driven lighting fabricated with blue laser diode(LD)and phosphor has been greatly developed in high-power lighting *** major obstacle is the luminescence saturation threshold of the fluorescence conversion material(YAG:Ce).In this work,we successfully prepared a series of high-quality and robust YAG:Ce single *** high quantum efficiency(QE=92%),regular crystal structure and high thermal conductivity,the single-crystal has excellent ability to deal with high radiation flux and thermal accumulation generated by high *** the single-crystal with the laser,the luminous efficiency up to 274 lm/W and saturation threshold of 12 W/mm^(2) were *** addition,the influence of Ce doping concentration and sample processing conditions on the indicators in laser-driven white lighting was systematically *** results are of great significance and are believed to promote the development of solid-state laser-driven lighting.

关键词： YAG:Ce Single-crystal laser diodes Luminous efficiency Saturation threshold Rare earths

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Mode characteristics of VCSELs with different shape and size oxidation apertures

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Chinese Physics B 2023年第4期32卷 347-351页

作者：谢新宇李健邱小浪王永丽李川川韦欣 Institute of Semiconductors Chinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China

Vertical cavity surface emitting laser(VCSELs)as the ideal light source for rubidium(Rb)and cesium(Cs)atomic clocks is analyzed for its mode and polarization *** fabricated three kinds of shapes:triangular,elliptic,and circular oxidation apertures which also have different *** formed three different shape oxide apertures by wetoxidation with 36μm-39μm circular *** results show that triangular oxidized-VCSEL has the advantages of mode and polarization selection over elliptic and circular oxide *** triangular oxide-confined VCSELs emit in single mode,the measured side mode suppression ratio(SMSR)is larger than 20 d B and orthogonal polarization suppression ratio achieves 10 d *** blueshift of VCSELs with triangular and elliptic apertures is observed with the decrease of aperture size.

关键词： semiconductor lasers laser diodes microcavity and microdisk lasers semiconductor-device characterization design modeling

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