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光学精密工程 2005年第4期13卷 397-402页

作者： GAO Jin-song XU Ying WANG Xiao-yi WANG Tong-tong Optical Technology and Research Center Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences Changchun 130022 China

ito （indium oxide doped with tin） thin films were deposited on glass substrates by using ito pellet with a composition of w（In2O3）=90% and w（SnO2）=10% by electron beam evaporated with End-Hall ion source assisted without extra heating. The rate of deposition and flow rate of oxygen were measured and changed to obtain the best properties of ito thin films. Furthermore, the post annealing process was done in vacuum at different annealing temperatures for 2 h and at 400℃ for different keeping time, respectively. The relation between optical, electrical properties and structure was discussed in detail.

关键词： ito 薄膜电子束离子源

ito nano-powders prepared by microwave-assisted co-precipitation in aqueous phase

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中国有色金属学会会刊：英文版 2009年第S3期19卷 752-756页

作者：朱协彬姜涛邱冠周黄伯云 School of Minerals Processing and Bioengineering Central South University

By using microwave-assisted co-precipitation in aqueous phase, adding surface activation agent PEG-6000 into the mixture of InCl3 solution and SnCl4 solution, and dropping the ammonia solution with the density (volume ratio) of 1-0 to 1-4, ito precursor was prepared at different reaction system temperatures of 35 ℃-85 ℃, then ito nano-powder was obtained after it was calcinated at 800 ℃ for 1 h. The morphology of ito nano-powder was characterized by SEM and its electrical conductivity was determined by conductivity meter. The effects of different temperatures and ammonia concentration in microwave-assisted reaction system on its morphology and electric conductivity were discussed. The experimental results indicate that with the dilution of the ammonia solution or the rise of reacting system temperature, the morphology of ito particles is transformed from spherical to rod-like one with the decline of its electric conductivity. And the electric conductivity of ito nano-powders with spherical morphology is higher than that of ito nano-powders with rod-like morphology.

关键词： ito nano-powder surface activation agent PEG-6000 microwave assistance co-precipitation aqueous phase

Room-Temperature Organic Negative Differential Resistance Device Using CdSe Quantum Dots as the ito Modification Layer

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Chinese Physics Letters 2015年第11期32卷 122-126页

作者：焦博姚丽娟吴春芳董化侯洵吴朝新 Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shannxi Key Lab of Information Photonic Technique School of Electronic and Information Engineering Xi'an Jiaotong University Xi'an 710049 School of Physical Science and Technology Lanzhou University Lanzhou 730000

Room-temperature negative differential resistance （NDR） has been observed in different types of organic materials. However, detailed study on the influence of the organic material on NDR performance is still scarce. In this work, room-temperature NDR ＆ observed when CdSe quantum dot （QD） modified ito is used as the electrode. Furthermore, material dependence of the NDR performance is observed by selecting materials with different charge transporting properties as the active layer, respectively. A peak-to-valley current ratio up to 9 is observed. It is demonstrated that the injection barrier between ito and the organic active layer plays a decisive role for the device NDR performance. The influence of the aggregation state of CdSe QDs on the NDR performance is also studied, which indicates that the NDR is caused by the resonant tunneling process in the ito/CdSe QD/organic active layer structure.

关键词： Room-Temperature Organic Negative Differential Resistance Device Using CdSe Quantum Dots as the ito Modification Layer QDs NDR ito

Electrodeposited copper oxides with a suppressed interfacial amorphous phase using mixed-crystalline ito and their enhanced photoelectrochemical performances

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Journal of Energy Chemistry 2023年第7期82卷 277-286,I0007页

作者： Ji Hoon Choi Hae-Jun Seok Dongchul Sung Dong Su Kim Hak Hyeon Lee Suklyun Hong Han-Ki Kim Hyung Koun Cho School of Advanced Materials Science and Engineering Sungkyunkwan University2066Seobu-roJangan-guSuwon-siGyeonggi-do 16419Republic of Korea Department of Physics Graphene Research Instituteand GRI-TPC International Research CenterSejong UniversitySeoul 05006Republic of Korea

The effectiveness of photoelectrochemical(PEC)water splitting is significantly restricted by insufficient light harvesting,rapid charge recombination,and slow water reduction *** the presence of amorphous phases in the interfaces hinders the overcome of these inherent limitations,a photoelectrode must be built ***,we artificially controlled the crystallographic orientation of indium tin oxide(ito)to determine the orientation with the smallest lattice mismatch at the Cu_(2)O interface,thus significantly reducing the amorphous phase in the early stage of electrodeposition ***[222]/[400]mixed orientation ito primarily exposed the{400}surface planes and accelerated charge transfer by forming an optimal interface with preferentially grown(111)oriented Cu_(2)O and minimized amorphous *** addition,the ito surface energy was calculated using density functional theory to theoretically verify which plane is more active for growing the photoactivation *** rationally designed ito/Cu_(2)O/Al-dope Zn O/TiO_(2)/Rh-P device,with each layer serving a specific purpose,achieved a photocurrent density of 8.23 mA cm^(-2)at 0 VRHEunder AM 1.5 G illumination,providing a standard method for effective solar-to-hydrogen conversion photocathodes.

关键词： Photoelectrochemical water splitting Cu_(2)O ito Hydrogen Surface energy DFT

ICP dry etching ito to improve the performance of GaN-based LEDs

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Journal of Semiconductors 2011年第1期32卷 65-68页

作者：孟丽丽陈依新马莉刘自可沈光地 Key Laboratory of Opto-Electronics Technology of the Ministry of Education Beijing University of Technology

In order to improve the light efficiency of the conventional GaN-based light-emitting diodes （LEDs）, the indium tin oxide （ito） film is introduced as the current spreading layer and the light anti-reflecting layer on the p-GaN surface. There is a big problem with the ito thin film＇s corrosion during the electrode preparation. In this paper, at least, the edge of the ito film was lateral corroded 3.5μm width, i.e. 6.43%-1/3 of ito film＇s area. An optimized simple process, i.e. inductively couple plasma （ICP）, was introduced to solve this problem. The ICP process not only prevented the ito film from lateral corrosion, but also improved the LED＇s light intensity and device performance. The edge of the ito film by ICP dry etching is steep, and the areas of ito film are whole. Compared with the chip by wet etching, the areas of light emission increase by 6.43% at least and the chip＇s lop values increase by 45.9% at most.

关键词： ito lateral corrosion dry etching light extraction efficiency

Properties of Reactive Magnetron Sputtered ito Films without in-situ Substrate Heating and Post-deposition Annealing

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Journal of Materials Science & Technology 2000年第3期16卷 281-285页

作者： Meng CHEN, Xuedong BAI, Jun GONG, Chao SUN, Rongfang HUANG and Lishi WEN (Institute of Metal Research, the Chinese Academy of Sciences, Shenyang 110015, China) Institute of Metal Research Chinese Academy of Sciences Shenyang 110015 China Ion Beam Lab. Shanghai Institute of Metallurgy Chinese Academy of Sciences Shanghai 200050 China

Indium tin oxide (ito) films were prepared on polyester, Si and glass substrate with relatively high deposition rate of above 0.9 nm/s by DC reactive magnetron sputtering technique at the sputtering pressure of 0.06 Pa system, respectively. The dependence of resistivity on deposition parameters, such as deposition rate, target-to-substrate distance (TSD), oxygen flow rate and sputtering time (thickness), has been investigated, together with the structural and the optical properties. It was revealed that all ito films exhibited lattice expansion. The resistivity of ito thin films shows significant substrate effect: much lower resistivity and broader process window have been reproducibly achieved for the deposition of ito films onto polyester rather than those prepared on both Si and glass substrates. The films with resistivity of as low as 4.23 x 10^-4 Ω.cm and average transmittance of ～78% at wavelength of 400～700 nm have been achieved for the films on polyester at room temperature.

关键词： ito Properties of Reactive Magnetron Sputtered ito Films without in-situ Substrate Heating and Post-deposition Annealing TSD rate than

Preparation and characteristics of indium tin oxide (ito) thin films at low temperature by r.f. magnetron sputtering

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Rare Metals 2006年第Z1期25卷 137-140页

作者： REN Bingyan LIU Xiaoping WANG Minhua XU Ying School of Material Science and Engineering Hebei University of Technology Tianjin 300130 China School of Material Science and Engineering Hebei University of Technology Tianjin 300130 China Beijing Solar Energy Research Institute Beijing 100083 China School of Material Science and Engineering Hebei University of Technology Tianjin 300130 China Beijing Solar Energy Research Institute Beijing 100083 China Beijing Solar Energy Research Institute Beijing 100083 China

Low resistivity and highly transparent ito conducting films for solar cell applications were fabricated at low temperature by r.f. magnetron sputtering. ito films were deposited on glass and silicon substrate. Electrical, optical, structural and morphological properties of the ito films were investigated in terms of the preparation conditions. The annealing treatment has improved the properties of the ito films at different degree. The maximum transmittance of the obtained ito films in the visible range is over 92%, and the low resistivity for the ito films are about 3.85×10-4 Ω·cm at 80 ℃, 80 W after annealing.

关键词： ito r.f. magnetron sputtering low temperature annealing

Preparation of ito transparent conductive film by sol-gel method

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Transactions of Nonferrous Metals Society of China 2006年第6期7卷 1358-1361页

作者：李芝华任冬燕 School of Materials Science and Engineering Central South University Department of Materials Engineering Mian Yang Vocational and Technical College Mianyang 621000China

The ito transparent conductive films were prepared on substrate of quartz glass by sol-gel *** raw materials were nitrate indium,acetylacetone and the dopant of anhydrous chloride(SnCl4).The process from gel to crystalline film and the microstructure of the films were investigated by DTA-TG,XRD and *** influence of preparation processes on the electricity performance of the films was also studied by four-probe *** results show that the crystallization process of ito xerogel completes when the heat treatment temperature reaches 600 ℃.The ito films possesses on vesicular structures accumulated by spherical particles,and both heat treatment temperature and cooling rate have important effects on the resistivity of ito films.

关键词： ito film sol-gel process resistivity transparency

Fabrication and Photoelectrochemical Properties of[Ru(bpy)_2dppz]^(2+) on ito Electrode Associated with the Oxidation of Guanine

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Chemical Research in Chinese Universities 2010年第4期26卷 649-655页

作者： GUO Qing-yu LI Hong YANG Hui-yi SHAO Jiang-yang Key Lab of Technology on Electrochemical Energy Storage and Power Generation in Guangdong Universities School of Chemistry and Environment South China Normal University Guangzhou 510006 P. R. China

Electrochemical assembly of [Ru（bpy）2dppz]^2＋{bpy=2,2＇-bipyridine, dppz=dipyrido[3,2-a：＂2＇,3＇-c]phenazine} on an ito electrode in the presence of guanine and photoelectroehemical properties of the assembled layer were investigated. It has been found that [Ru（bpy）2dppz]^3＋/2＋ can be assembled onto the ito electrode by the method of repetitive voltammetric sweeping, and the assembly is enhanced by guanine. The peak currents of prewaves increase linearly up to a guanine concentration of 0.25 mmol/L. More importantly, upon illumination with 470 nm light source and at an applied potential of 0.2 V, cathodic current for the fabricated layer on the ito electrode indicate a linear enhancement with the rise of guanine concentration. Meanwhile, [Ru（bpy）2dppz]^2＋ can be served as an excellent mediator to prompt the oxidation of guanine, and the mediated peak current increases linearly with added guanine concentration from 0.01 to 0.25 mmol/L. In addition, the assembly mechanism of [Ru（bpy）2dppz]^2＋ on the ito electrode associated with the oxidation of guanine and the assistance of light irradiation were discussed.

关键词： Polypyridvl ruthenium(II) complex Guanine ito Assembly Photoelectrochemistrv

N-Soliton-like Solution of ito Equation

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Communications in Theoretical Physics 2004年第5X期42卷 641-644页

作者： ZHANGYi CHENDeng-Yuan DepartmentofMathematics ZhejiangNormalUniversityJinhua321004China DepartmentofMathematics ShanghaiUniversityShanghai200436China

By using the extended Hirota's method, the N-soliton-like solution of the ito equation is obtained. Furthermore, we also investigate the soliton-like solution interaction and find singularity.

关键词：孤波解偏微分方程数学物理变量转化 ito