ITO thin films prepared by electron beam evaporation with End-Hall ion source assisted without heating to the substrate
ITO thin films prepared by electron beam evaporation with End-Hall ion source assisted without heating to the substrate作者机构：Optical Technology and Research Center Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences Changchun 130022 China
出 版 物：《光学精密工程》 (Optics and Precision Engineering)
年 卷 期：2005年第13卷第4期
页 面：397-402页
核心收录：
学科分类：08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）]
摘 要：ITO （indium oxide doped with tin） thin films were deposited on glass substrates by using ITO pellet with a composition of w（In2O3）=90% and w（SnO2）=10% by electron beam evaporated with End-Hall ion source assisted without extra heating. The rate of deposition and flow rate of oxygen were measured and changed to obtain the best properties of ITO thin films. Furthermore, the post annealing process was done in vacuum at different annealing temperatures for 2 h and at 400℃ for different keeping time, respectively. The relation between optical, electrical properties and structure was discussed in detail.
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