检索结果-南通市图书馆

International Journal of Minerals,Metallurgy and Materials 2017年第9期24卷 1067-1074页

作者： Lin Li Guo-hua Ni Qi-jia Guo Qi-fu Lin Peng Zhao Jun-li Cheng Institute of plasma Physics Chinese Academy of SciencesHefei 230031China

Amorphous spherical silica powders were prepared by inductively coupled thermal plasma treatment at a radio frequency of 36.2 MHz. The effects of the added content of hydrogen and nitrogen into argon(serving as the sheath gas), as well as the carrier gas flow rate, on the spheroidization rate of silica powders, were investigated. The prepared silica powders before and after plasma treatment were examined by scanning electron microscopy, X-ray diffraction, and laser granulometric analysis. Results indicated that the average size of the silica particles increased, and the transformation of crystals into the amorphous state occurred after plasma treatment. Discharge image processing was employed to analyze the effect of the plasma temperature field on the spheroidization rate. The spheroidization rate of the silica powder increased with the increase of the hydrogen content in the sheath gas. On the other hand, the spheroidization rate of the silica power first increased and then decreased with the increase of the nitrogen content in the sheath gas. Moreover, the amorphous content increased with the increase of the spheroidization rate of the silica powder.

关键词： silica powders spheroidization inductively coupled plasma mixed gas

An atmosphere-breathing propulsion system using inductively coupled plasma source

在线全文

学校读者我要写书评

暂无评论

Chinese Journal of Aeronautics 2023年第5期36卷 223-238页

作者： Peng ZHENG Jianjun WU Yu ZHANG Bixuan CHE Yuanzheng ZHAO College of Aerospace Science and Engineering National University of Defense TechnologyChangsha 410073China

CubeSats have attracted more research interest recently due to their lower cost and shorter production time.A promising technology for CubeSat application is atmosphere-breathing electric propulsion,which can capture the atmospheric particles as propulsion propellant to maintain longterm mission at very low Earth *** paper designs an atmosphere-breathing electric propulsion system for a 3 U CubeSat,which consists of an intake device and an electric thruster based on the inductively coupled *** capture performance of intake device is optimized considering both particles capture efficiency and compression *** plasma source is also analyzed by experiment and ***,the thrust performance is also estimated when taking into account the intake *** results show that it is feasible to use atmosphere-breathing electric propulsion technology for CubeSats to compensate for aerodynamic drag at lower Earth orbit.

关键词： Atmosphere-Breathing Electric Propulsion(ABEP) CubeSat inductively coupled plasma Intake device Very Low Earth Orbit(VLEO)

Identification and elimination of inductively coupled plasma-induced defects in Al_xGa_(1-x)N/GaN heterostructures

在线全文

学校读者我要写书评

暂无评论

Chinese Physics B 2011年第7期20卷 393-398页

作者：林芳沈波卢励吾刘新宇魏珂许福军王彦马楠黄俊 State Key Laboratory of Artificial Microstructures and Mesoscopic Physics School of PhysicsPeking University Institute of Microelectronics Chinese Academy of Sciences

By using temperature-dependent Hall, variable-frequency capacitance-voltage and cathodoluminescence （CL） measurements, the identification of inductively coupled plasma （ICP）-induced defect states around the AlxGa1-xN/GaN heterointerface and their elimination by subsequent annealing in AlxGa1-xN/GaN heterostructures are systematically investigated. The energy levels of interface states with activation energies in a range from 0.211 to 0.253 eV below the conduction band of GaN are observed. The interface state density after the ICP-etching process is as high as 2.75× 10^12 cm^-***^-1. The ICP-induced interface states could be reduced by two orders of magnitude by subsequent annealing in N2 ambient. The CL studies indicate that the ICP-induced defects should be Ga-vacancy related.

关键词： inductively coupled plasma subsequent annealing defect state

Experimental Study of the Influence of Process Pressure and Gas Composition on GaAs Etching Characteristics in Cl_2/BCl_3-Based inductively coupled plasma

在线全文

学校读者我要写书评

暂无评论

plasma Science and Technology 2011年第2期13卷 223-229页

作者： D.S.RAWAL B.K.SEHGAL R.MURALIDHARAN H.K.MALIK Solid State Physics Laboratory PWAPA Laboratory Department of Physics Indian Institute of Technology Delhi

A study of Cl2/BCl3-based inductively coupled plasma （ICP） was conducted using thick photoresist mask for anisotropic etching of 50μm diameter holes in a GaAs wafer at a relatively high average etching rate for etching depths of more than 150μm. plasma etch characteristics with ICP process pressure and the percentage of BCI3 were studied in greater detail at a constant ICP coil/bias power. The measured peak-to-peak voltage as a function of pressure was used to estimate the minimum energy of the ions bombarding the substrate. The process pressure was found to have a substantial influence on the energy of heavy ions. Various ion species in plasma showed minimum energy variation from 1.85 eV to 7.5 eV in the pressure range of 20 mTorr to 50 mTorr. The effect of pressure and the percentage of BCl3 on the etching rate and surface smoothness of the bottom surface of the etched hole were studied for a fixed total flow rate. The etching rate was found to decrease with the percentage of BCl3, whereas the addition of BCl3 resulted in anisotropic holes with a smooth veil free bottom surface at a pressure of 30 mTorr and 42% BC13. In addition, variation of the etching yield with pressure and etching depth were also investigated.

关键词： GaAs inductively coupled plasma etching ion energy etch yield

Gas flow characteristics of argon inductively coupled plasma and advections of plasma species under incompressible and compressible flows

在线全文

学校读者我要写书评

暂无评论

Chinese Physics B 2018年第12期27卷 348-360页

作者： Shu-Xia Zhao Zhao Feng Physics Department Dalian University of Technology

In this work, incompressible and compressible flows of background gas are characterized in argon inductively coupled plasma by using a fluid model, and the respective influence of the two flows on the plasma properties is specified. In the incompressible flow, only the velocity variable is calculated, while in the compressible flow, both the velocity and density variables are calculated. The compressible flow is more realistic; nevertheless, a comparison of the two types of flow is convenient for people to investigate the respective role of velocity and density variables. The peripheral symmetric profile of metastable density near the chamber sidewall is broken in the incompressible flow. At the compressible flow, the electron density increases and the electron temperature decreases. Meanwhile, the metastable density peak shifts to the dielectric window from the discharge center, besides for the peripheral density profile distortion, similar to the incompressible *** velocity profile at incompressible flow is not altered when changing the inlet velocity, whereas clear peak shift of velocity profile from the inlet to the outlet at compressible flow is observed as increasing the gas flow rate. The shift of velocity peak is more obvious at low pressures for it is easy to compress the rarefied gas. The velocity profile variations at compressible flow show people the concrete residing processes of background molecule and plasma species in the chamber at different flow rates. Of more significance is it implied that in the usual linear method that people use to calculate the residence time, one important parameter in the gas flow dynamics, needs to be rectified. The spatial profile of pressure simulated exhibits obvious spatial gradient. This is helpful for experimentalists to understand their gas pressure measurements that are always taken at the chamber outlet. At the end, the work specification and limitations are listed.

关键词： gas flow inductively coupled plasma compressible flow fluid model

Numerical Investigation of Flow Fields in inductively coupled plasma Wind Tunnels

在线全文

学校读者我要写书评

暂无评论

plasma Science and Technology 2014年第10期16卷 930-940页

作者：喻明浩 Yusuke TAKAHASHI Hisashi KIHARA Ken-ichi ABE Kazuhiko YAMADA Takashi ABE Department of Aeronautics and Astronautics Kyushu UniversityFukuoka 819-0395Japan Division of Mechanical and Space Engineering Hokkaido UniversitySapporo 060-8628Japan Institute of Space and Astronautical Science Japan Aerospace Exploration AgencySagamihara 252-5210Japan

Numerical simulations of 10 kW and 110 kW inductively coupled plasma （ICP） wind tunnels were carried out to study physical properties of the flow inside the ICP torch and vacuum chamber with air as tile working gas. Two-dimensional compressible axisymmetric Navier- Stokes （N-S） equations that took into account 11 species and 49 chemical reactions of air, were solved. A heat source model was used to describe the heating phenomenon instead of solving the electromagnetic equations. In the vacuum chamber, a four-temperature model was coupled with N-S equations. Numerical results for tile 10 kW ICP wind tunnel are presented and discussed in detail as a representative case. It was found that the plasma flow in the vacuum chamber tended to be in local thermoehemical equilibrium. To study the influence of operation conditions on the flow field, simulations were carried out for different chamber pressures and/or input powers. The computational results for the above two ICP wind tunnels were compared with corresponding experimental data. The computational and experimental results agree well, therefore the flow fields of ICP wind tunnels can be clearly understood.

关键词： inductively coupled plasma Joule heating vacuum chamber chemical reactions

Vertical and Smooth, etching of InP by Cl2／CH4／Ar inductively coupled plasma at Room Temperature

在线全文

学校读者我要写书评

暂无评论

Chinese Physics Letters 2003年第8期20卷 1312-1314页

作者：孙长征周进波熊兵王健罗毅 DepartmentofElectronicEngineering TsinghuaUniversityBeijing100084

We study the room-temperature dry, etching of InP by inductively coupled plasma (ICP) using Cl2/CH4/Ar mixtures. Etches were characterized in terms of anisotropy and surface roughness by scanning electron microscopy and atomic force microscopy, respectively. It is found that the flow ratio between Cl2 and CH4, ICP power, rf chuck power, and table temperature can greatly influence the, etching results. By adjusting, etching parameters, vertical sidewall and smooth surface can be obtained simultaneously, together with a moderate, etch rate and a good select ratio. The root-mean-square surface roughness is measured to be as low as 0.27 nm. To the best of our knowledge, this is the best result for InP to date. The, etch rate is 855 nm/min, and the selectivity ratio over SiO2 is estimated to be higher than 15:1. The stoichiometry of the, etched surface has also been investigated by Auger electron spectroscopy. The, etched surface is found to manifest a slight P deficiency, and the ratio between P and In reaches the stoichiometric value within about 0.75 nm depth into the surface.

关键词： etched surface Auger electron spectroscopy specific emission etching Indium phosphide inductively coupled plasma Atomic Force Microscopy Surface roughness vertical Smooth surface

Thermochemical Nonequilibrium 2D Modeling of Nitrogen inductively coupled plasma Flow

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

plasma Science and Technology 2015年第9期17卷 749-760页

作者： YU Minghao Yusuke TAKAHASHI Hisashi KIHARA Ken-ichi ABE Kazuhiko YAMADA Takashi ABE Satoshi MIYATANI Department of Aeronautics and Astronautics Kyushu University Division of Mechanical and Space Engineering Hokkaido University Institute of Space and Astronautical Science Japan Aerospace Exploration Agency Department of Aeronautics and Astronautics The University of Tokyo

Two-dimensional（2D） numerical simulations of thermochemical nonequilibrium inductively coupled plasma（ICP） flows inside a 10-kW inductively coupled plasma wind tunnel（ICPWT） were carried out with nitrogen as the working *** axisymmetric NavierStokes（N-S） equations coupled with magnetic vector potential equations were solved.A fourtemperature model including an improved electron-vibration relaxation time was used to model the internal energy exchange between electron and heavy *** third-order accuracy electron transport properties（3rd AETP） were applied to the simulations.A hybrid chemical kinetic model was adopted to model the chemical nonequilibrium *** flow characteristics such as thermal nonequilibrium,inductive discharge,effects of Lorentz force were made clear through the present *** was clarified that the thermal nonequilibrium model played an important role in properly predicting the temperature *** prediction accuracy can be improved by applying the 3rd AETP to the simulation for this ICPWT.

关键词： inductively coupled plasma nonequilibrium electron transport properties,magnetic vector potential

Modeling Approach and Analysis of the Structural Parameters of an inductively coupled plasma Etcher Based on a Regression Orthogonal Design

在线全文

学校读者我要写书评

暂无评论

plasma Science and Technology 2012年第12期14卷 1059-1068页

作者：程嘉朱煜季林红 Department of Precision Instruments and Mechanology Tsinghua University

The geometry of an inductively coupled plasma （ICP） etcher is usually considered to be an important factor for determining both plasma and process uniformity over a large wafer. During the past few decades, these parameters were determined by the ＂trial and error＂ method, resulting in wastes of time and funds. In this paper, a new approach of regression orthogonal design with plasma simulation experiments is proposed to investigate the sensitivity of the structural parameters on the uniformity of plasma characteristics. The tool for simulating plasma is CFD-ACE＋, which is commercial multi-physical modeling software that has been proven to be accurate for plasma simulation. The simulated experimental results are analyzed to get a regression equation on three structural parameters. Through this equation, engineers can compute the uniformity of the electron number density rapidly without modeling by CFD-ACE＋. An optimization performed at the end produces good results.

关键词： fluid model inductively coupled plasma regression orthogonal structural parameters design of experiment

Fluid simulation of the effect of a dielectric window with high temperature on plasma parameters in inductively coupled plasma

在线全文

学校读者我要写书评

暂无评论

plasma Science and Technology 2023年第3期25卷 51-61页

作者：李娜韩道满张权治刘旭辉王英杰王友年 Key Laboratory of Materials Modification by Laser Ionand Electron Beams(Ministry of Education)School of PhysicsDalian University of TechnologyDalian 116024People’s Republic of China Lab of Advanced Space Propulsion and Beijing Engineering Research Center of Efficient and Green Aerospace Propulsion Technology Beijing Institute of Control EngineeringBeijing 100190People’s Republic of China

To maintain the high-density plasma source in inductively coupled plasma(ICP),very high radiofrequency power is often delivered to the antenna,which can heat the dielectric windows near the antenna to high *** high temperature can modulate the plasma characteristics to a large *** thus study the effect of dielectric window temperature on plasma parameters in two different ICP structures based on COMSOL *** distributions of various plasma species are examined at different dielectric window *** concentration of neutral gas is found to be largely modulated at high dielectric window temperature,which further affects the electron collision probability with neutrals and the electron ***,the electron density profiles are barely affected by the dielectric window temperature,which is mainly concentrated at the center of the reactor due to the fixed power input and pressure.

关键词： fluid simulation metastable argon dielectric window temperature inductively coupled plasma