Vertical and Smooth, etching of InP by Cl2／CH4／Ar Inductively Coupled Plasma at Room Temperature

作     者：孙长征 周进波 熊兵 王健 罗毅 

作者机构：DepartmentofElectronicEngineeringTsinghuaUniversityBeijing100084 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2003年第20卷第8期

页      面：1312-1314页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：国家973计划 国家863计划 国家自然科学基金 

主　　题：etched surface Auger electron spectroscopy specific emission etching Indium phosphide Inductively coupled plasma Atomic Force Microscopy Surface roughness vertical Smooth surface 

摘      要：We study the room-temperature dry, etching of InP by inductively coupled plasma (ICP) using Cl2/CH4/Ar mixtures. Etches were characterized in terms of anisotropy and surface roughness by scanning electron microscopy and atomic force microscopy, respectively. It is found that the flow ratio between Cl2 and CH4, ICP power, rf chuck power, and table temperature can greatly influence the, etching results. By adjusting, etching parameters, vertical sidewall and smooth surface can be obtained simultaneously, together with a moderate, etch rate and a good select ratio. The root-mean-square surface roughness is measured to be as low as 0.27 nm. To the best of our knowledge, this is the best result for InP to date. The, etch rate is 855 nm/min, and the selectivity ratio over SiO2 is estimated to be higher than 15:1. The stoichiometry of the, etched surface has also been investigated by Auger electron spectroscopy. The, etched surface is found to manifest a slight P deficiency, and the ratio between P and In reaches the stoichiometric value within about 0.75 nm depth into the surface.