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Effects of Strain Channel on Electron Irradiation Tolerance of inp-based hemt Structures

原子能科学技术 2023年第12期57卷 2288-2294页

作者： FANG Renfeng CAO Wenyu WEI Yanfeng WANG Yin CHEN Chuanliang YAN Jiasheng XING Yan LIANG Guijie ZHOU Shuxing Hubei Key Laboratory of Low Dimensional Optoelectronic Materials and Devices Hubei University of Arts and ScienceXiangyang 441053China Hubei Key Laboratory of High Power Semiconductor Technology Hubei TECH Semiconductor Co.LtdXiangyang 441021China Hubei Longzhong Laboratory Xiangyang 441000China

The introduction of strain In_(x)Ga_(1-x)As channel with high In content increases the confinement of the two-dimensional electron gas(2DEG)and further improves the high-frequency performance of InGaAs/InAlAs/inp *** effect of In_(x)Ga_(1-x)As channel with different In contents on electron irradiation tolerance of inp-based hemt structures in terms of 2DEG mobility and density has been *** experiment results show that,after the same high electron irradiation dose,the 2DEG mobility and density in inp-based hemt structures with strain In_(x)Ga_(1-x)As(x>0.53)channel decrease more dramatically than that without strain In_(0.53)Ga_(0.47)As ***,the degradation of 2DEG mobility and density becomes more severe as the increase of In content and strain in the In_(x)Ga_(1-x)As *** research results can provide some suggestions for the design of radiation-resistant inp-based hemts.

关键词： inp-based hemt strain channel two-dimensional electron gas electron irradiation

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Influences of increasing gate stem height on DC and RF performances of InAlAs/InGaAs inp-based hemts

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Chinese Physics B 2021年第1期30卷 586-592页

作者： Zhi-Hang Tong Peng Ding Yong-Bo Su Da-Hai Wang Zhi Jin High-Frequency High-Voltage Device and Integrated Circuits Center Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China University of Chinese Academic of Sciences Beijing 100049China

The T-gate stem height of In Al As/In Ga As In P-based high electron mobility transistor(hemt) is increased from165 nm to 250 nm. The influences of increasing the gate stem height on the direct current(DC) and radio frequency(RF)performances of device are investigated. A 120-nm-long gate, 250-nm-high gate stem device exhibits a higher threshold voltage(Vth) of 60 m V than a 120-nm-long gate devices with a short gate stem, caused by more Pt distributions on the gate foot edges of the high Ti/Pt/Au gate. The Pt distribution in Schottky contact metal is found to increase with the gate stem height or the gate length increasing, and thus enhancing the Schottky barrier height and expanding the gate length,which can be due to the increased internal tensile stress of Pt. The more Pt distributions for the high gate stem device also lead to more obvious Pt sinking, which reduces the distance between the gate and the In Ga As channel so that the transconductance(gm) of the high gate stem device is 70 m S/mm larger than that of the short stem device. As for the RF performances,the gate extrinsic parasitic capacitance decreases and the intrinsic transconductance increases after the gate stem height has been increased, so the RF performances of device are obviously improved. The high gate stem device yields a maximum ft of 270 GHz and fmax of 460 GHz, while the short gate stem device has a maximum ft of 240 GHz and the fmax of 370 GHz.

关键词： inp-based hemt gate stem height Pt/Ti Schottky contact gate parasitic capacitances

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Physical modeling of direct current and radio frequency characteristics for In P-based InAlAs/InGaAs hemts

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Chinese Physics B 2016年第10期25卷 509-512页

作者：孙树祥吉慧芳姚会娟李胜金智丁芃钟英辉 School of Physics and Engineering Zhengzhou University Institute of Microelectronics Chinese Academy of Sciences

Direct current（DC） and radio frequency（RF） performances of inp-based high electron mobility transistors（hemts）are investigated by Sentaurus TCAD. The physical models including hydrodynamic transport model, Shockley–Read–Hall recombination, Auger recombination, radiative recombination, density gradient model and high field-dependent mobility are used to characterize the devices. The simulated results and measured results about DC and RF performances are compared, showing that they are well matched. However, the slight differences in channel current and pinch-off voltage may be accounted for by the surface defects resulting from oxidized InAlAs material in the gate-recess region. Moreover,the simulated frequency characteristics can be extrapolated beyond the test equipment limitation of 40 GHz, which gives a more accurate maximum oscillation frequency( f;) of 385 GHz.

关键词： inp-based hemt hydrodynamic model the current gain cutoff frequency(f_T) the maximum oscillation frequency(f_(max))

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