Effects of Strain Channel on Electron Irradiation Tolerance of InP-based HEMT Structures

作     者：FANG Renfeng CAO Wenyu WEI Yanfeng WANG Yin CHEN Chuanliang YAN Jiasheng XING Yan LIANG Guijie ZHOU Shuxing FANG Renfeng;CAO Wenyu;WEI Yanfeng;WANG Yin;CHEN Chuanliang;YAN Jiasheng;XING Yan;LIANG Guijie;ZHOU Shuxing

作者机构：Hubei Key Laboratory of Low Dimensional Optoelectronic Materials and DevicesHubei University of Arts and ScienceXiangyang 441053China Hubei Key Laboratory of High Power Semiconductor TechnologyHubei TECH Semiconductor Co.LtdXiangyang 441021China Hubei Longzhong LaboratoryXiangyang 441000China 

出 版 物：《原子能科学技术》 (Atomic Energy Science and Technology)

年 卷 期：2023年第57卷第12期

页      面：2288-2294页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 082703[工学-核技术及应用] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0827[工学-核科学与技术] 

基　　金：National Natural Science Foundation of China(11705277) Science and Technology Research Project of Hubei Provincial Department of Education(Q20222607) Graduate Quality Engineering Support Project of Hubei University of Arts and Science(YZ3202405) 

主　　题：InP-based HEMT strain channel two-dimensional electron gas electron irradiation 

摘      要：The introduction of strain In_(x)Ga_(1-x)As channel with high In content increases the confinement of the two-dimensional electron gas(2DEG)and further improves the high-frequency performance of InGaAs/InAlAs/InP *** effect of In_(x)Ga_(1-x)As channel with different In contents on electron irradiation tolerance of InP-based HEMT structures in terms of 2DEG mobility and density has been *** experiment results show that,after the same high electron irradiation dose,the 2DEG mobility and density in InP-based HEMT structures with strain In_(x)Ga_(1-x)As(x0.53)channel decrease more dramatically than that without strain In_(0.53)Ga_(0.47)As ***,the degradation of 2DEG mobility and density becomes more severe as the increase of In content and strain in the In_(x)Ga_(1-x)As *** research results can provide some suggestions for the design of radiation-resistant InP-based HEMTs.