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New Description Model of Sputtering on Material Surface

Chinese Physics Letters 2003年第7期20卷 1098-1101页

作者：邓柏权严建成黄锦华彭利林 SouthwesterninstituteofPhysics POBox432Chengdu610041

In order to estimate the erosion rates of some plasma facing component materials, the sputtering yields of Mo, W and deuterium-saturated Li bombarded by fusion charged particles are calculated by application of new sputtering physics description methods based on the bipartition model of ion transport theory. The comparisons with Monte Carlo calculation and experimental results are made. These data might be useful to estimate the lifetime of plasma facing components and to analyse the impurity level in core plasma of fusion reactors.

关键词： MONTE-CARLO CALCULATION Fusion reactors surface properties(materials) Plasmas erosion rates impurity level Sputtering

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Electronic structures of phosphorus-doped diamond films and impacts of their vacancies

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Science China(Physics,Mechanics & Astronomy) 2010年第7期53卷 1248-1254页

作者： WANG GangWen SHAO QingYi Laboratory of Quantum Information Technology School of Physics and Telecommunication EngineeringSouth China Normal UniversityGuangzhou 510006China Department of Physics Zhangzhou Normal UniversityZhangzhou 363000China

In order to better understand the bonding mechanisms of the phosphorus-doped diamond films and the influences of the phosphorus-doped concentration on the diamond lattice integrity and conductivity,we calculate the electronic structures of the phosphorus-doped diamond with different phosphorus concentrations and the density of states in the phosphorus--doped diamond films with a vacant lattice site by the first principle *** calculation results show the phosphorus atom only affects the bonds of a few atoms in its vicinity,and the conductivity increases as the doped concentration *** in the diamond lattice with a total number of 64 atoms and introducing a vacancy into the non-nearest neighbor lattice site of a phosphorus atom,we have found that both the injuries of the phosphorus-doped diamond films and the N-type electron conductivity of diamond films could be improved.

关键词： phosphorus-doped impurity level vacancy diamond lattice

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Measurement of Deep Energy level in InP: Fe by the Method of OTCS

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Semiconductor Photonics and Technology 1998年第2期4卷 78-83页

作者： SHAO Limei (Jilin Polytechnic University, Changchun 130022, CHN) YANG Wei YANG Ming YAN Ruhui (Technology Academy of Armor Force of P. L. A., Changchun 130117, CHN )

We have measured the deep energy level of the InP: Fe which is semi -insulator through the method of OTCS. The effect of light intensity on OTCS measurement is mainly discussed. There are electron trap of E_T =0.34 eV and hole trap of E_T = 1.13 eV in InP: Fe under the strong light and low temperature. The location of the OTCS peak of electron trap (E_T = 0.34 eV) moves towards the direction of high temperaturer, when the light intensity was increased, E_T is different under different light intensity. It is corrected in terms of theory that the stuff ratio of the deep energy level is affected by the light intensity. The experiments show that the error is decreased greatly with the correction.

关键词： impurity level Measurement Optical Transient Current Spectroscopy Semiconductor Materials

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