Measurement of Deep Energy Level in InP: Fe by the Method of OTCS

作     者：SHAO Limei (Jilin Polytechnic University, Changchun 130022, CHN) YANG Wei YANG Ming YAN Ruhui (Technology Academy of Armor Force of P. L. A., Changchun 130117, CHN ) 

出 版 物：《Semiconductor Photonics and Technology》 (半导体光子学与技术（英文版）)

年 卷 期：1998年第4卷第2期

页      面：78-83页

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

主　　题：Impurity Level Measurement Optical Transient Current Spectroscopy Semiconductor Materials 

摘      要：We have measured the deep energy level of the InP: Fe which is semi -insulator through the method of OTCS. The effect of light intensity on OTCS measurement is mainly discussed. There are electron trap of E_T =0.34 eV and hole trap of E_T = 1.13 eV in InP: Fe under the strong light and low temperature. The location of the OTCS peak of electron trap (E_T = 0.34 eV) moves towards the direction of high temperaturer, when the light intensity was increased, E_T is different under different light intensity. It is corrected in terms of theory that the stuff ratio of the deep energy level is affected by the light intensity. The experiments show that the error is decreased greatly with the correction.