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hybrid material integration in silicon photonic integrated circuits

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Journal of Semiconductors 2021年第4期42卷 33-42页

作者： Swapnajit Chakravarty† Min Teng Reza Safian Leimeng Zhuang IMEC USA 194 Neocity WayKissimmeeFL 34744USA

hybrid integration ofⅢ-Ⅴand ferroelectric materials is being broadly adopted to enhance functionalities in silicon photonic integrated circuits(PICs).Bonding and transfer printing have been the popular approaches for integration of III–V gain media with silicon *** approaches are also being considered for ferroelectrics to enable larger RF modulation bandwidths,higher linearity,lower optical loss integrated optical modulators on *** this paper,we review existing integration strategies ofⅢ-Ⅴmaterials and present a route towards hybrid integration of bothⅢ-Ⅴand ferroelectrics on the same *** show that adiabatic transformation of the optical mode between hybrid ferroelectric and silicon sections enables efficient transfer of optical modal energies for maximum overlap of the optical mode with the ferroelectric media,similar to approaches adopted to maximize optical overlap with the gain section,thereby reducing lasing thresholds for hybridⅢ-Ⅴintegration with silicon *** designs are presented to enable a foundry compatible hybrid integration route of diverse functionalities on silicon PICs.

关键词： CMOS technology photonic integrated circuits hybrid integration ferroelectric modulator

Phosphor-free white light-emitting diodes

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Chinese Physics B 2015年第6期24卷 75-82页

作者：郭霞刘巧莉李冲刘白董建沈光地 Photonic Research Laboratory Beijing University of Technology

The multiple color-matching schemes that could improve the color rendering index for phosphor-free white LEDs are discussed. Then we review a few of the recent research directions for phosphor-free white LEDs, which include the development of monolithic GaN-based white LEDs and hybrid integrated GaN-based and A1GalnP-based white LEDs. These development paths will pave the way toward commercial application of phosphor-free white LEDs in the coming years.

关键词： phosphor-free white light-emitting diodes color rendering index hybrid integration

Recent progress of integrated circuits and optoelectronic chips

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Science China(Information Sciences) 2021年第10期64卷 103-135页

作者： Yue HAO Shuiying XIANG Genquan HAN Jincheng ZHANG Xiaohua MA Zhangming ZHU Xingxing GUO Yahui ZHANG Yanan HAN Ziwei SONG Yan LIU Ling YANG Hong ZHOU Jiangyi SHI Wei ZHANG Min XU Weisheng ZHAO Biao PAN Yangqi HUANG Qi LIU Yimao CAI Jian ZHU Xin OU Tiangui YOU Huaqiang WU Bin GAO Zhiyong ZHANG Guoping GUO Yonghua CHEN Yong LIU Xiangfei CHEN Chunlai XUE Xingjun WANG Lixia ZHAO Xihua ZOU Lianshan YAN Ming LI School of Microelectronics Xidian University State Key Laboratory of Integrated Service Networks Xidian University National Integrated Circuit Innovation Center School of Microelectronics Fudan University School of Integrated Circuit Science and Engineering Beihang University China Center for Information Industry Development Frontier Institute of Chip and System Fudan University Institute of Microelectronics Peking University Nanjing Electronic Devices Institute State Key Laboratory of Functional Material for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Institute of Microelectronics Tsinghua University Center for Carbon-based Electronics Department of Electronics Peking University CAS Key Laboratory of Quantum Information University of Science and Technology of China CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics University of Science and Technology of China Origin Quantum Computing Company Limited Key Laboratory of Flexible Electronics & Institute of Advanced Materials Nanjing Tech University State Key Laboratory of Electronic Thin Films and Integrated Devices School of Optoelectronic Science and EngineeringUniversity of Electronic Science and Technology of China National Laboratory of Solid State Microstructures & College of Engineering and Applied Sciences Nanjing University State Key Laboratory on Integrated Optoelectronics Institute of Semiconductors Chinese Academy of Sciences Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences State Key Laboratory of Advanced Optical Communication Systems and Networks School of Electronics Engineering and Computer Science Peking University School of Electrical and Electronic Engineering Tiangong University Center for Information Photonics and Communications School of Information Science and TechnologySouthwest Jiaotong University School of Electronic Electrical and Communication Engineering

Integrated circuits(ICs) and optoelectronic chips are the foundation stones of the modern information society. The IC industry has been driven by the so-called "Moore’s law" in the past 60 years, and now has entered the post Moore’s law era. In this paper, we review the recent progress of ICs and optoelectronic chips. The research status, technical challenges and development trend of devices, chips and integrated technologies of typical IC and optoelectronic chips are focused on. The main contents include the development law of IC and optoelectronic chip technology, the IC design and processing technology, emerging memory and chip architecture, brain-like chip structure and its mechanism, heterogeneous integration, quantum chip technology, silicon photonics chip technology, integrated microwave photonic chip, and optoelectronic hybrid integrated chip.

关键词： integrated circuit photonic neural computing semiconductor science and technology optoelectronic device and chip photonic integrated circuit wide bandgap semiconductors silicon photonics hybrid integration quantum chip integrated microwave photonic

Micro-Opto-Mechanical Disk for Inertia Sensing

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Photonic Sensors 2016年第1期6卷 78-84页

作者： Ghada H. DUSHAQ Tadesse MULUGETA Mahmoud RASRAS Department of Electrical Engineering and Computer Science iMicro Center MASDAR Institute Building A1 PO Box 54224 Masdar City United Arab Emirates

An optically enabled z-axis micro-disk inertia sensor is presented, which consists of a disk-shaped proof mass integrated on top of an optical waveguide. Numerical simulations show that the optical power of laser beam propagating in a narrow silicon nitride （Si3N4） waveguide located under the disk is attenuated in response to the vertical movement of the micro-disk. The high leakage power of the TM mode can effectively be used to detect a dynamic range of 1 g - 10g （g=9.8 rn/s ）. At lest, the waveguide is kept at a nominal gap of 1 μm from the proof mass. It is adiabatically tapered to a narrow dimension of W×H = 350×220nm2 in a region where the optical mode is intended to interact with the proof mass. Furthermore, the bottom cladding is completely etched away to suspend the waveguide and improve the optical interaction with the proof mass. The proposed optical inertia sensor has a high sensitivity of 3 dB/g when a 50μm-long waveguide is used （normalized sensitivity 0.5 dB/μm2） for the vertical movement detection.

关键词： Micro-opto-Mechanical system photonic inertia sensor hybrid integration

Dual-polarization multiplexing amorphous Si:H grating couplers for silicon photonic transmitters in the photonic BiCMOS backend of line

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Frontiers of Optoelectronics 2022年第1期15卷 143-155页

作者： Galina Georgieva Christian Mai Pascal M.Seiler Anna Peczek Lars Zimmermann Hochfrequenztechnik-Photonik/Siliziumphotonik Technische Universität BerlinStraße des 17.Juni 13510623 BerlinGermany IHP-Leibnitz Institut für innovative Mikroelektronik Im Technologiepark 2515236 Frankfurt(Oder)Germany IHP Solutions GmbH Im Technologiepark 715236 Frankfurt(Oder)Germany

In this paper,we report on polarization combining two-dimensional grating couplers(2D GCs)on amorphous Si:H,fabricated in the backend of line of a photonic BiCMOS *** 2D GCs can be used as an interface of a hybrid silicon photonic coherent transmitter,which can be implemented on bulk Si *** fabricated 2D GCs operate in the telecom C-band and show an experimental coupling efficiency of−5 dB with a wafer variation of±1.2 *** for efficiency enhancement and improved performance stability in future design generations are outlined and extension toward O-band devices is also investigated.

关键词： hybrid integration Photonic BiCMOS Amorphous silicon Two-dimensional grating coupler(2D GC) Dual-polarization coherent communication Silicon photonics