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Plasma atomic layer etching of GaN/AlGaN materials and application: An overview

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Journal of Semiconductors 2022年第11期43卷 70-77页

作者： Lulu Guan Xingyu Li Dongchen Che Kaidong Xu Shiwei Zhuang School of Physics and Electronic Engineering Jiangsu Normal UniversityXuzhou 221116China Jiangsu Leuven Instruments Co.Ltd Xuzhou 221300China

With the development of the third generation of semiconductor devices,it is essential to achieve precise etching of gallium nitride(GaN)materials that is close to the atomic *** with the traditional wet etching and continuous plasma etching,plasma atomic layer etching(ALE)of GaN has the advantages of self-limiting etching,high selectivity to other materials,and smooth etched *** this paper the basic properties and applications of GaN are *** also presents the various etching methods of *** plasma ALE systems are reviewed,and their similarities and differences are *** addition,the industrial application of GaN plasma ALE is outlined.

关键词： gallium nitride plasma etching atomic layer etching self-limiting

Influence of growth pressure of a GaN buffer layer on the properties of MOCVD GaN

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Science China Technological Sciences 2003年第6期46卷 620-626页

作者：陈俊张书明张宝顺朱建军冯淦段俐宏王玉田杨辉郑文琛 National Research Center for Opto-Electronic Technology Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China National Research Center for Opto-Electronic Technology Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China National Research Center for Opto-Electronic Technology Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China National Research Center for Opto-Electronic Technology Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China National Research Center for Opto-Electronic Technology Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China National Research Center for Opto-Electronic Technology Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China National Research Center for Opto-Electronic Technology Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China National Research Center for Opto-Electronic Technology Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China Department of Material Science Sichuan University Chengdu 610064 China Department of Material Science Sichuan University Chengdu 610064 China

The influence of growth pressure of GaN buffer layer on the properties of MOCVD GaN on -Al2O3 has been investigated with the aid of a home-made in situ laser reflectometry meas-urement system. The results obtained with in situ measurements and scanning electron micro-scope show that with the increase in deposition pressure of buffer layer, the nuclei increase in size, which roughens the surface, and delays the coalescence of GaN nuclei. The optical and crystalline quality of GaN epilayer was improved when buffer layer was deposited at high pressure.

关键词： gallium nitride MOCVD in situ laser reflectometry.

Effect of Different Etching Time on Fabrication of an Optoelectronic Device Based on GaN/Psi

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Journal of Renewable Materials 2023年第3期11卷 1101-1122页

作者： Haneen D.Jabbar Makram A.Fakhri Mohammed Jalal Abdul Razzaq Omar S.Dahham Evan T.Salim Forat H.Alsultany U.Hashim Laser and Optoelectronic Engineering Department University of Technology-IraqBaghdadIraq Department of Civil Engineering College of EngineeringCihan University-ErbilKurdistan RegionIraq Department of Petroleum and Gas Refinery Engineering Al-Farabi University CollageBaghdadIraq Applied Science Department University of Technology-IraqBaghdadIraq Department of Medical Physics Al-Mustaqbal University CollegeBabylonIraq Institute of Nano Electronic Engineering University Malaysia PerlisKangarPerlisMalaysia

gallium nitride(GaN)/porous silicon(PSi)film was prepared using a pulsed laser deposition method and 1064 nm Nd:YAG laser for optoelectronic applications and a series of Psi substrates were fabricated using a photoelectrochemical etching method assisted by laser at different etching times for 2.5–15 min at 2.5 min intervals.X-ray diffraction,room-temperature photoluminescence,atomic force microscopy and field emission scanning electron microscopy images,and electrical characteristics in the prepared GaN on the Psi film were *** optimum Psi substrate was obtained under the following conditions:10 min,10 mA/cm^(2),and 24%hydrofluoric *** substrate exhibited two highly cubic crystalline structures at(200)and(400)orientations and yellow visible band photoluminescence,and homogeneous pores formed over the entire *** pores had steep oval shapes and were accompanied by small dark pores that appeared topographically and *** GaN/Psi film fabricated through PLD exhibited a high and hexagonal crystallographic texture in the(002)*** properties results revealed that the photoluminescence emission of the deposited nano-GaN films was in the ultraviolet band(374 nm)related to GaN material and in the near-infrared band(730 nm)related to the Psi *** topographical and morphological results of the GaN films confirmed that the deposited film contained spherical grains with an average diameter of 51.8 nm and surface roughness of 4.8 *** GaN/Psi surface showed a cauliflower-like morphology,and the built-in voltage decreased from 3.4 to 2.7 eV after *** fabricated GaN/Psi film exhibited good electrical characteristics.

关键词： gallium nitride porous silicon photoelectrochemical etching pulsed laser deposition optical device

Surface treatment of GaN nanowires for enhanced photoelectrochemical water-splitting

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Chinese Chemical Letters 2024年第9期35卷 398-402页

作者： Wenhao Chen Jian Du Hanbin Zhang Hancheng Wang Kaicheng Xu Zhujun Gao Jiaming Tong Jin Wang Junjun Xue Ting Zhi Longlu Wang College of Integrated Circuit Science and Engineering Nanjing University of Posts and TelecommunicationsNanjing 210023China College of Electronic and Optical Engineering&College of Flexible Electronics(Future Technology) Nanjing University of Posts and TelecommunicationsNanjing 210023China

High-efficiency hydrogen production through photoelectrochemical(PEC)water splitting has emerged as a promising solution to address current global energy challenges.Ⅲ-nitride semiconductor photoelectrodes with nanostructures have demonstrated great potential in the near future due to their high light absorption,tunable direct band gap,and strong physicochemical ***,several issues,including surface trapping centers,surface Fermi level pinning,and surface band bending,need to be *** this work,enhanced photovoltaic properties have been achieved using gallium nitride(GaN)nanowires(NWs)photoelectrodes by adopting an alkaline solution surface treatment method to reduce the surface *** was found that surface oxides on NWs can be removed by an alkaline solution treatment without changing the surface morphology through X-ray photoelectron spectroscopy(XPS),scanning electron microscopy(SEM)and other characterization *** findings provide new insights to the development of high-efficiency photoelectrodes for new energy source applications.

关键词： Water splitting Photoelectrochemical cells gallium nitride Surface treatment Nano-architectures

The First Principles Investigations of the Thermoelectric Properties of GaN with p-and n-Type Doping

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Chinese Journal of Structural Chemistry 2012年第11期31卷 1613-1617页

作者：吴文涛吴克琛马祖驹洒荣建韦永勤李巧红 State Key Laboratory of Structural Chemistry Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences

We investigate the thermoelectric properties of GaN with p- and n-type doping by the first principles calculation and the semi-classical Boltzmann theory. We find that the power factors （Sacr） of p-type GaN （-3500 μW/mK2） is about twice that of the n-type （-1750 μW/mK2）, which indicates the thermoelectric properties of p-type GaN would be better. Thermal conductivity of GaN crystal decreases rapidly as the temperature increases, but it is still too large for thermoelectric applications. The figure of merit （ZT） estimated at 1500 K is 0.134 for p-type GaN crystal and 0.062 for the n-type.

关键词： thermoelectric properties gallium nitride first principles Boltzmann theory

Integration of GaN thin films with silicon substrates by fusion bonding and laser lift-off

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Chinese Optics Letters 2006年第7期4卷 416-418页

作者：王婷郭霞方圆刘斌沈光地 Optoelectronic Technology Laboratory Institute of Electronic Information & Control Engineering Beijing University of Technology

GaN thin films grown on sapphire substrates by metalorganic chemical vapor deposition （MOCVD） are successfully bonded and transferred onto Si receptor substrates using fusion bonding and laser lift-off （LLO） technique. GaN/Al2O3 structures are joined to Si substrates by pressure bonding Ti/Au coated GaN surface onto Ti/Au coated Si receptor substrates at the temperature of 400℃. KrF excimer laser with 400-mJ/cm^2 energy density, 248-nm wavelength, and 30-ns pulse width is used to irradiate the wafer through the transparent sapphire substrates and separate GaN films from sapphire. Cross-section scanning electron microscopy （SEM） combined with energy dispersive X-ray spectrometer （EDS） measurements show that Au/Si solid solution is formed during bonding process. Atomic force microscopy （AFM） and photoluminescence （PL） measurements show that the qualities of GaN films on Si substrates degrade little after substrates transfer.

关键词： Atomic force microscopy Bonding Energy dispersive spectroscopy Excimer lasers Fusion reactions gallium nitride Metallorganic chemical vapor deposition Photoluminescence Sapphire Scanning electron microscopy Silicon Solid solutions Substrates Surfaces X ray spectrometers

Defect evolution in GaN thin film heterogeneously integrated with CMOS-compatible Si(100) substrate by ion-cutting technology

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Science China(Information Sciences) 2023年第11期66卷 313-314页

作者： Hangning SHI Ailun YI Jiaxin DING Xudong LIU Qingcheng QIN Juemin YI Junjie HU Miao WANG Demin CAI Jianfeng WANG Ke XU Fengwen MU Tadatomo SUGA René HELLER Mao WANG Shengqiang ZHOU Wenhui XU Kai HUANG Tiangui YOU Xin OU State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences University of Chinese Academy of Sciences School of Materials and Chemistry University of Shanghai for Science and Technology Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of Sciences Suzhou Nanowin Science and Technology Co. Ltd. SABers Co. Ltd. Collaborative Research Center Meisei University Helmholtz-Zentrum Dresden-Rossendorf Institute of Ion Beam Physics and Materials Research College of Physics and Electronic Engineering Sichuan Normal University

Ion-cutting technology is an ingenious solution to the highquality heterogeneous integration of Ga N thin films with CMOS-compatible Si(100) substrate, which provides a platform to combine Ga N-based optoelectronics, high-frequency and high-power electronics with digital signal processing,logic computation, and control of Si(100) CMOS [1].

关键词： gallium nitride

Influence of initial growth conditions and Mg-surfactant on the quality of GaN film grown by MOVPE

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Journal of Semiconductors 2015年第2期36卷 34-37页

作者：曹峻松吕欣赵璐冰曲爽高伟 State Key Laboratory of Solid-State Lighting Beijing Solid-State Lighting Science and Technology Promotion Center Institute of Semiconductors Chinese Academy of Sciences Shandong Inspur Huaguang Optoelectronics Co. LTD.

The initial growth conditions of a 100 nm thick GaN layer and Mg-surfactant on the quality of the GaN epilayer grown on a 6H-SiC substrate by metal-organic vapor phase epitaxy have been investigated in this research. Experimental results have shown that a high V/III ratio and the initially low growth rate of the GaN layer are favorable for two-dimension growth and surface morphology of GaN and the formation of a smoother growth surface. Mg-surfactant occurring during GaN growth can reduce the dislocations density of the GaN epilayer but increase the surface RMS, which are attributed to the change of growth mode.

关键词： metalorganic vapor phase epitaxy gallium nitride high resolution X-ray diffraction

Fabrication of blue LEDs on big chips

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Chinese Optics Letters 2003年第4期1卷 220-221页

作者：殷宗友曹殿生殷景志张源涛李正庭杜国同杨树人 Changchun University of Technology School of Material Science and Engineering Changchun 130012 Jilin University College of Electronic Science and Engineering Changchun 130023 CAO GROUP INC. 8683 South 700 West SandyUT 84070 USA Jilin University College of Electronic Science and Engineering Changchun 130023 Jilin University College of Electronic Science and Engineering Changchun 130023

In this paper, the GaN based epitaxial wafer is fabricated on big 1 mmx1 mm chips, and packaged with a special technology. At working current 350 mA and working voltage 3.74 V, the full viewing angle, the axial brightness and the output integral power of the 465 nm LED can reach 125? 210, 000 cd/m2 and 1.5 1m, respectively. The LED with such good performances has promising application potential in the fields of display, traffic and the development of solid-state white light source.

关键词： Epitaxial growth Fabrication gallium nitride