Plasma atomic layer etching of GaN/AlGaN materials and application: An overview

作     者：Lulu Guan Xingyu Li Dongchen Che Kaidong Xu Shiwei Zhuang Lulu Guan;Xingyu Li;Dongchen Che;Kaidong Xu;Shiwei Zhuang

作者机构：School of Physics and Electronic EngineeringJiangsu Normal UniversityXuzhou 221116China Jiangsu Leuven Instruments Co.LtdXuzhou 221300China 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2022年第43卷第11期

页      面：70-77页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：This work was supported by the Key Projects of Ministry of Science and Technology of the People’s Republic of China(Grant No.SQ2020YFF0407077) the Industry-University-Research Cooperation Project of Jiangsu Province(Grant No.BY2020462) the National Foreign Experts Bureau High-end Foreign Experts Project(Grant No.G20190114003) Postgraduate Research&Practice Innovation Program of Jiangsu Province(Grant No.2021XKT1206) 

主　　题：gallium nitride plasma etching atomic layer etching self-limiting 

摘      要：With the development of the third generation of semiconductor devices,it is essential to achieve precise etching of gallium nitride(GaN)materials that is close to the atomic *** with the traditional wet etching and continuous plasma etching,plasma atomic layer etching(ALE)of GaN has the advantages of self-limiting etching,high selectivity to other materials,and smooth etched *** this paper the basic properties and applications of GaN are *** also presents the various etching methods of *** plasma ALE systems are reviewed,and their similarities and differences are *** addition,the industrial application of GaN plasma ALE is outlined.