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Thiazoloisoindigo-based Polymer Semiconductors: Synthesis,Structure-Property Relationship, Charge Carrier Polarity, and field-effect transistor Performance

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Chinese Journal of Polymer Science 2024年第1期42卷 24-31,I0006页

作者： Bo-Wen Li Miao Xiong Mei-Hua Liu Zhi-Gao Li Long Sang Zi-Han Xiong Biao Xiao Jian Pei Xiao-Bo Wan Key Laboratory of Optoelectronic Chemical Materials and Devices Ministry of EducationSchoolofOptoelectronic Materials&TechnologyJianghan UniversityWuhan430056China Bejing National Laboratoryfor Molecular Sciences the Key Laboratory of Bioorganic Chemistry and Molecular Engineering of Ministry of EducationCollege of Chemistry and Molecular EngineeringPeking UniversityBeijing 100871China

Developing new polymeric semiconductors with excellent device performance is essential for organic electronics. Herein, we synthesized two new thiazoloisoindigo(Tz II)-based polymers, namely, P(Tz II-d Th-d Th) and P(Tz II-d Th-d Tz), by copolymerizing thiophene-flanked Tz II with bithiophene and bithiazole, respectively. Owing to the more electron-deficient nature of bithiazole than bithiophene, P(Tz II-d Th-d Tz)possesses deeper LUMO/HOMO levels of-3.45/-5.47 e V than P(Tz II-d Th-d Th)(-3.34/-5.32 e V). The organic field-effect transistor(OFET) devices based on P(Tz II-d Th-d Th) exhibited p-type behaviors with an average hole mobility value as high as 1.43 cm^(2)·V^(-1)·s^(-1), while P(Tz II-d Th-d Tz)showed typical ambipolar characteristics with average hole and electron mobilities of 0.38 and 0.56 cm^(2)·V^(-1)·s^(-1). In addition, we compared the performances of both polymers with other Tz II-based polymers reported in our previous work, and showed that the charge carrier polarity can be manipulated by adjusting the number of the thiophene units between the acceptor unit. As the increase of the number of thiophene rings,charge carrier polarity shifts from electron-dominated ambipolar transport to hole-dominated ambipolar transport and then to unipolar hole transport in OFETs, which provides an effective molecular design strategy for further optimization of polymer OFET performance.

关键词： field-effect transistor Charge carrier polarity Thiazoloisoindigo

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A novel negative quantum capacitance field-effect transistor with molybdenum disulfide integrated gate stack and steep subthreshold swing for ultra-low power applications

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Science China(Information Sciences) 2023年第6期66卷 71-77页

作者： Liang CHEN Huimin WANG Qianqian HUANG Ru HUANG School of Integrated Circuits Peking University Beijing Advanced Innovation Center for Integrated Circuits

Various steep-slope devices based on novel structures and mechanisms garnered considerable attention for their potential in ultra-low power logic applications. In this work, a novel steep-slope negative quantum capacitance field-effect transistor(NQCFET)with molybdenum disulfide(MoS2)-integrated gate stack was realized by theoretical analysis and experimental evaluation. By combining the MoS+2 equivalent capacitance model calibrated with experimental results, the NQCFET device model is further *** results demonstrated that the optimized MoS2-integrated NQCFET can achieve a subthreshold swing(SS)of sub-60 mV/dec over a current range of 5 decades, with the minimum SS reaching 29 mV/dec,indicating the remarkable potential of MoS2-integrated NQCFETs for ultra-low power applications.

关键词： negative quantum capacitance molybdenum disulfide field-effect transistor subthreshold swing ultra-low power device

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Dipole-assisted carrier transport in bis(trifluoromethane) sulfonamide-treated O-ReS_(2) field-effect transistor

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Nano Research 2021年第7期14卷 2207-2214页

作者： Jae Young Park SangHyuk Yoo Byeongho Park Taekyeong Kim Young Tea Chun Jong Min Kim Keonwook Kang Soo Hyun Lee Seong Chan Jun Department of Mechanical Engineering Yonsei UniversitySeoul 03722Republic of Korea Center for Biomicrosystem Brain Science InstituteKorea Institute of Science and TechnologySeoul 02792Republic of Korea Sensor System Research Center Korea Institute of Science and TechnologySeoul 02792Republic of Korea Department of Physics Hankuk University of Foreign StudiesYongin 17035Republic of Korea Division of Electronics and Electrical Information Engineering Korea Maritime and Ocean UniversityBusan 49112Republic of Korea Electrical Engineering Division Engineering Department University of CambridgeCambridgeCB3 OFAUK

We demonstrate the dipole-assisted carrier transport properties of bis(trifluoromethane)sulfonamide(TFSI)-treated O-ReS_(2) field-effect *** ReS_(2) was compared with defect-mediated ReS_(2) to confirm whether the presence of defects on the interface enhances the interaction between O-ReS_(2) and TFSI *** to the experiment,density functional theory(DFT)calculation was performed,and the result indicated that the charge transfer between TFSI and O-ReS_(2) is more sensitive to external electric fields than that between TFSI and pristine ReS_(2).After TFSI treatment,the drain current of O-ReS_(2) FET was significantly increased up to 1,113.4 times except in the range of−0.32–0.76 V owing to Schottky barrier modulation from dipole polarization of TFSI molecules,contrary to a significant degradation in device performance in pristine ReS_(2) ***,in the treated O-ReS_(2) device,the dipole direction was highly influenced by the voltage sweep direction,generating a significant area of hysteresis in I–V and transfer characteristics,which was further verified by the surface potential ***,the dipole state was enhanced according to the wavelength of the light source and *** results indicate that TFSI-treated ReS_(2) FET has large potential for use as next-generation memristor,memory,and photodetector.

关键词： Two-dimensional material ReS_(2) field-effect transistor TFSI superacid dipole

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The research on suspended ZnO nanowire field-effect transistor

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Chinese Physics B 2009年第4期18卷 1594-1597页

作者：黎明张海英郭常新徐静波付晓君 Institute of Microelectronics Chinese Academy of Sciences Department of Physics University of Science and Technology of China

This paper reports that a novel type of suspended ZnO nanowire field-effect transistors （FETs） were successfully fabricated using a photolithography process, and their electrical properties were characterized by I-V measurements. Single-crystalline ZnO nanowires were synthesized by a hydrothermal method, they were used as a suspended ZnO nanowire channel of back-gate field-effect transistors （FET）. The fabricated suspended nanowire FETs showed a pchannel depletion mode, exhibited high on-off current ratio of -10^5. When VDS = 2.5V, the peak transconductances of the suspended FETs were 0.396 μS, the oxide capacitance was found to be 1.547 fF, the pinch-off voltage VTH was about 0.6 V, the electron mobility was on average 50.17cm2/Vs. The resistivity of the ZnO nanowire channel was estimated to be 0.96 × 10^2 Ω cm at VGS = 0 V. These characteristics revealed that the suspended nanowire FET fabricated by the photolithography process had excellent performance. Better contacts between the ZnO nanowire and metal electrodes could be improved through annealing and metal deposition using a focused ion beam.

关键词： ZnO nanowire back-gate suspended field-effect transistor

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Highly Sensitive Protein Sensor Based on Thermally-Reduced Graphene Oxide field-effect transistor

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Nano Research 2011年第10期4卷 921-930页

作者： Shun Mao Kehan Yu Ganhua Lu Junhong Chen Department of Mechanical Engineering University of Wisconsin-Milwaukee 3200 N. Craraer St. Milwaukee WI 53211 USA

We report the fabrication of a highly sensitive field-effect transistor （FET） biosensor using thermally-reduced graphene oxide （TRGO） sheets functionalized with gold nanoparticle （NP）-antibody conjugates. Probe antibody was labeled on the surface of TRGO sheets through Au NPs and electrical detection of protein binding （Immunoglobulin G/IgG and anti-lmmunoglobulin G/anti-lgG） was accomplished by FET and direct current （dc） measurements. The protein binding events induced significant changes in the resistance of the TRGO sheet, which is referred to as the sensor response. The dependence of the sensor response on the TRGO base resistance in the sensor and the antibody areal density on the TRGO sheet was systematically studied, from which a correlation of the sensor response with sensor parameters was found： the sensor response was more significant with larger TRGO base resistance and higher antibody areal density. The detection limit of the novel biosensor was around the 0.2 ng/rnL level, which is among the best of,＇eported carbon nanomaterial-based protein sensors and can be further optimized by tuning the sensor structure.

关键词： Biosensor thermally-reduced graphene oxide field-effect transistor protein detection

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A combined virtual impactor and field-effect transistor microsystem for particulate matter separation and detection

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Nanotechnology and Precision Engineering 2021年第1期4卷 17-25页

作者： Yanna Li Muqing Fu Wei Pang Ye Chang Xuexin Duan State Key Laboratory of Precision Measuring Technology and Instruments Tianjin UniversityTianjin 300072China School of Precision Instrument and Opto-Electronics Engineering Tianjin UniversityTianjin 300072China

Ambient suspended particulate matter(PM)(primarily with particle diameter 2.5m or less,i.e.,PM2.5)can adversely affect ecosystems and human ***,optical particle sensors based on light scattering dominate the portable PM sensing ***,the light scattering method has poor adaptability to different-sized PM and adverse environmental ***,we design and develop a portable PM sensing microsystem that consists of a micromachined virtual impactor(VI)for particle separation,a thermophoretic deposition chip for particle collection,and an extended-gate field-effect transistor(FET)for particle *** system can realize on-site separation,collection,and analysis of aerosol particles without being influenced by environmental *** this study,the design of the VI is thoroughly analyzed by numerical simulation,and mixtures of different-sized silicon dioxide(SiO2)particles are used in an experimental verification of the performance of the VI and *** the low cost and compact design of the whole system,the proposed PM analysis microsystem has potential for PM detection under a wide range of conditions,such as heavily polluted industrial environments and for point-of-need outdoor and indoor air quality monitoring.

关键词： Particulate matter Microsystem Virtual impactor 50%cutoff diameter field-effect transistor

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field effect transistor-based tactile sensors: From sensor configurations to advanced applications

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InfoMat 2023年第1期5卷 1-61页

作者： Jian Wang Shuyan Xu Congcong Zhang Ailing Yin Mingyuan Sun Hongru Yang Chenguo Hu Hong Liu Institute for Advanced Interdisciplinary Research(iAIR) Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of ShandongUniversity of JinanJinanPeople's Republic of China Department of Applied Physics State Key Laboratory of Power Transmission Equipment&System Security and New TechnologyChongqing UniversityChongqingPeople's Republic of China Department of Physics School of Physical Science and TechnologyUniversity of JinanJinanPeople's Republic of China State key Laboratory of Crystal Materials Shandong UniversityJinanPeople's Republic of China

The past several decades have witnessed great progress in high-performance field effect transistors(FET)as one of the most important electronic *** the same time,due to their intrinsic advantages,such as multiparameter accessibility,excellent electric signal amplification function,and ease of large-scale manufacturing,FET as tactile sensors for flexible wear-able devices,artificial intelligence,Internet of Things,and other fields to per-ceive external stimuli has also attracted great attention and become a significant field of general *** importantly,FET has a unique three-terminal structure,which enables its different components to detect external mechanics through different sensing *** one hand,it provides an important platform to shed deep insights into the underlying mechanisms of the tactile *** the other hand,these properties could in turn endow excellent components for the construction of tactile matrix sensor arrays with high *** special emphasis on the configuration of FETs,this review classified and summarized structure-optimized FET tactile sensors with gate,dielectric layer,semiconductor layer,and source/drain electrodes as sensing active components,*** working principles and the state-of-the-art protocols in terms of high-performance tactile sensors are detail discussed and highlighted,the innovative pixel distribution and integration analysis of the transistor sensor matrix array concerning flexible electronics are also *** hope that the introduction of this review can provide some inspiration for future researchers to design and fabricate high-performance FET-based tactile sensor chips for flexible electronics and other fields.

关键词： field-effect transistor flexible electronics tactile matrix sensor array tactile sensors

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An integrated flexible and reusable graphene field effect transistor nanosensor for monitoring glucose

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Journal of Materiomics 2020年第2期6卷 308-314页

作者： Cong Huang Zhuang Hao Tianxu Qi Yunlu Pan Xuezeng Zhao Key Laboratory of Micro-systems and Micro-structures Manufacturing of Ministry of Education Harbin Institute of TechnologyHarbin150001HeilongjiangChina School of Mechatronics Engineering Harbin Institute of TechnologyHarbin150001HeilongjiangChina School of Chemistry and Chemical Engineering Harbin Institute of TechnologyHarbin150001HeilongjiangChina

Diabetes is a chronic metabolic disease that has effect on blood sugar level and affects millions of *** present an integrated flexible and reusable graphene-based field effect transistor(GFET)nanosensor for the detection of glucose using pyrene-1-boronic acid(PBA)as the *** nanosensor fabricated on the polyimide performs GFET-based rapid transduction of the glucose-PBA binding,thereby potentially allowing the detection of glucose that are sampled reliably from human bodily fluids(e.g.,sweat)in wearable sensing *** to the reversible binding interaction between PBA and glucose,reusability of our nanosensor can be realized by exposing graphene surface to acidic *** characterizing the stability and reusability of the nanosensor for wearable applications,we investigated the effects of substrate bending,multiple reuse and long-time storage on the equilibrium dissociation constant between the PBA and *** show that bending,multiple reuse(over 10 times)and long-time storage has negligible effect on the sensing *** detection of glucose with a limit of detection(LOD)of 0.15 μM and a dynamic range of 0.05-100 μM,which covers the reference scope of physical examination or screening of ***,our flexible GFET nanosensor is promising for wearable and reusable biosensing applications.

关键词： Graphene Flexible Reusable Glucose sensor field-effect transistor

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Synthesis and field-effect transistor Behavior of New Oligo-selenophene Derivatives

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复旦学报（自然科学版） 2007年第5期46卷 795-页

作者： Jiwon Hong In-Hwan Jung Hong-ku Shim Deparment of Chemistry and School of Molecular Science (BK21) Korea Advanced Institute of Science and Technology (KAIST)Yuseong-GuDaejeon 305-701Republic of Korea

1 Results In recent years,interests in organic semiconductor have increased due to the applications in optoelectronic devices such as organic light-emitting diodes (OLEDs)[1],field-effect transistors (FETs)[2],and photovoltaic devices[3]. These organic electronics have several advantages over conventional inorganic electronics including facile processability,chemical tunability,compatibility with plastic substrates,and low cost to fabricate. Selenophene-based molecules show good π-conjugating electron o...

关键词： field-effect transistor selenophene oligomer

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Flexible Graphene field‑effect transistors and Their Application in Flexible Biomedical Sensing

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Nano-Micro Letters 2025年第2期17卷 252-313页

作者： Mingyuan Sun Shuai Wang Yanbo Liang Chao Wang Yunhong Zhang Hong Liu Yu Zhang Lin Han Institute of Marine Science and Technology Shandong UniversityQingdao 266237ShandongPeople’s Republic of China State Key Laboratory of Crystal Materials Shandong UniversityJinan 250100ShandongPeople’s Republic of China School of Integrated Circuits Shandong UniversityJinan 250100ShandongPeople’s Republic of China Shandong Engineering Research Center of Biomarker and Artificial Intelligence Application Jinan250100ShandongPeople’s Republic of China

Flexible electronics are transforming our lives by making daily activities more *** to this innovation are field-effect transistors(FETs),valued for their efficient signal processing,nanoscale fabrication,low-power consumption,fast response times,and ***,known for its exceptional mechanical properties,high electron mobility,and biocompatibility,is an ideal material for FET channels and *** combination of graphene and FETs has given rise to flexible graphene field-effect transistors(FGFETs),driving significant advances in flexible electronics and sparked a strong interest in flexible biomedical ***,we first provide a brief overview of the basic structure,operating mechanism,and evaluation parameters of FGFETs,and delve into their material selection and patterning *** ability of FGFETs to sense strains and biomolecular charges opens up diverse application *** specifically analyze the latest strategies for integrating FGFETs into wearable and implantable flexible biomedical sensors,focusing on the key aspects of constructing high-quality flexible biomedical ***,we discuss the current challenges and prospects of FGFETs and their applications in biomedical *** review will provide valuable insights and inspiration for ongoing research to improve the quality of FGFETs and broaden their application prospects in flexible biomedical sensing.

关键词： Flexible Graphene field-effect transistor Wearable Implantable Biosensor

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