检索结果-南通市图书馆

A General Synthetic Approach of Organic Lateral Heterostructures for Optical Signal Converters in All-Color Wavelength

引用

CCS Chemistry 2023年第2期5卷 423-433页

作者： Qiang Lv Xue-Dong Wang Wan-Ying Yang Kai-Li Wang Chao-Fei Xu Min Zheng Liang-Sheng Liao National Engineering Laboratory for Modern Silk College of Textile and Clothing EngineeringResearch Center of Cooperative Innovation for Functional Organic/Polymer Material Micro/NanofabricationSoochow UniversitySuzhouJiangsu 215123 Institute of Functional Nano&Soft Materials(FUNSOM) Soochow UniversitySuzhouJiangsu 215123 Jiangsu General Science&Technology Co. Ltd.Suzhou Industrial ParkSuzhouJiangsu 215123 Macao Institute of Materials Science and Engineering Macao University of Science and TechnologyTaipa 999078Macao SAR

Organic heterostructures with precisely defined compositions,architectures,and interfaces are considered promising building blocks for integrated optoelectronic ***,it remains a great challenge to rationally design and synthesize a heterostructure with tunable performance for promising applications such as optoelectronic ***,we report a universal strategy for the synthesis of organic lateral heterostructures(OLHs)with tunable function and optical *** fabricated cocrystals based on the tunable intermolecular distance(dπ–πfrom 3.33 to 3.48Å)ofBenzo[ghi]perylene(BGP)-based driven by arene-perfluoroarene interaction or charge transfer interaction;these different components were selectively constructed into organic solid solution microwires or ***,the solid solution microwires obtained could be epitaxially grown on the BGP-tetrabromophthalicanhydride trunk microwire to construct a series of OLHs microwires,which led to the successful demonstration of both photonic signal conversion and optical logic gate in all-color *** work gives a new insight into the fine synthesis of heterostructures with tunable structures/performances,providing predictable synthetic pathways to multifunctional organic heterostructures for the future realization of integrated optoelectronics.

关键词： organic heterostructure low-dimensional structure crystal epitaxial growth integrated photonics

来源：

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Growth of oxidation-resistive silicene-like thin flakes and Si nanostructures on graphene

引用

Journal of Semiconductors 2019年第6期40卷 36-42页

作者： Naili Yue Joshua Myers Liqin Su Wentao Wang Fude Liu Raphael Tsu Yan Zhuang Yong Zhang Department of Electrical and Computer Engineering The University of North Carolina at Charlotte Charlotte North Carolina 28223 USA Department of Electrical Engineering Wright State University Dayton OH 45435 USA Department of Mechanical Engineering The University of Hong Kong Hong Kong China

We report the growth of Si nanostructures, either as thin films or nanoparticles, on graphene substrates. The Si nanostructures are shown to be single crystalline, air stable and oxidation resistive, as indicated by the observation of a single crystalline Si Raman mode at around 520 cm^-1, a STM image of an ordered surface structure under ambient condition, and a Schottky junction with graphite. Ultra-thin silicon regions exhibit silicene-like behavior, including a Raman mode at around 550 cm^-1, a triangular lattice structure in STM that has distinctly different lattice spacing from that of either graphene or thicker Si, and metallic conductivity of up to 500 times higher than that of graphite. This work suggests a bottom-up approach to forming a Si nanostructure array on a large-scale patterned graphene substrate that can be used to fabricate nanoscale Si electronic devices.

关键词： silicene silicon Raman STM epitaxial growth oxidation

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

H-plasma In-situ Cleaning and Lattice Damage Elimination

引用

Journal of Materials Science & Technology 1993年第2期9卷 133-135页

作者： Chenguang GONG+ Fuchu SHEN Biguang YE Jian CHEN, Zhenjiang University, Hangzhou, 310027, China

This article discusses the silicon lattice damage induced during H-plasma in-situ cleaning and finds that the substrate temperature, plasma power, processing time, all affect the extent of the distortion of the surfac... 详细信息

关键词： H-plasma cleaning lattice damage epitaxial Si film

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

Perspective:optically-pumped Ⅲ–Ⅴ quantum dot microcavity lasers via CMOS compatible patterned Si (001) substrates

引用

Journal of Semiconductors 2019年第10期40卷 45-53页

作者： Wenqi Wei Qi Feng Zihao Wang Ting Wang Jianjun Zhang Institute of Physics Chinese Academy of SciencesBeijing 100190China Center of Materials Science and Optoelectronic Engineering University of Chinese Academy of SciencesBeijing 100049China

Direct epitaxial growthⅢ–Ⅴquantum dot(QD)structures on CMOS-compatible silicon substrates is considered as one of the most promising approaches to achieve low-cost and high-yield Si-based lasers for silicon photonic ***,epitaxial growth ofⅢ–Ⅴmaterials on Si encounters the following three major challenges:high density of threading dislocations,antiphase boundaries and thermal cracks,which significantly degrade the crystal quality and potential device *** this review,we will focus on some recent results related to InAs/GaAs quantum dot lasers on Si(001)substrates byⅢ–Ⅴ/Ⅳhybrid epitaxial growth via(111)-faceted Si hollow ***,by using the step-graded epitaxial growth process the emission wavelength of InAs QDs can be extended from O-band to C/***-performance InAs/GaAs QD microdisk lasers with sub-milliwatts threshold on Si(001)substrates are fabricated and *** above results pave a promising path towards the on-chip lasers for optical interconnect applications.

关键词： quantum dots silicon photonics epitaxial growth semiconductor lasers

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

EQR SiPM with P-on-N diode configuration

引用

Nuclear Science and Techniques 2019年第8期30卷 19-25页

作者： Jian-Quan Jia Jia-Li Jiang Kun Liang Ru Yang De-Jun Han Novel Device Laboratory Beijing Normal University

The silicon photomultiplier(SiPM) with epitaxial quenching resistor(EQR) is an emerging and developing technology that has recently attracted the interest from the research community. It has characteristics of a continuous low-resistance cap layer and integrated quenching resisters in epitaxial silicon layer, which makes it possible to increase microcell density or reduce microcell size, thus obtaining large dynamic range and high photon detection efficiency(PDE) simultaneously. Results published show that the EQR SiPM with N-on-P diode configuration had relatively low PDE at peak wavelength of 480 nm as 16%. This paper reported the EQR SiPM with P-on-N diode configuration having active area of 3 × 3 mm^2 and cell density of 10,000/mm^2(total 90,000 pixels). It was characterized with gain of 2E5, dark count rate of 7 MHz, crosstalk of 7%, dynamic range of 85,000 pixels, overall recovery time of 32 ns at room temperature and over-voltage of 3.5 V. The improved PDE at peak wavelength of 420 nm was 30%.

关键词： Silicon photomultiplier epitaxial quenching P-on-N diode Characteristics

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

Super-Hydrides of Lanthanum and Yttrium: On Optimal Conditions for Achieving near Room Temperature Superconductivity

引用

World Journal of Condensed Matter Physics 2019年第1期9卷 22-36页

作者： Hans Hermann Otto Materialwissenschaftliche Kristallographie Clausthal University of Technology Clausthal-Zellerfeld Germany

Recently, many seminal papers deal with the syntheses, stability and superconducting properties of super-hydrides like LaH10 or YH10 under high pressure, reporting critical temperatures near room temperature. In the first run one will assume that the involved metal atoms contribute a number of 3 electrons to the pairing pool corresponding to their valence. However, another possibility may be that the cationic valence is somewhat smaller, for instance only 2.29, resulting in a nominal electron number per cation of σ0 = 0.229 ≈ 3/13 instead of 0.3. Then, we will have a numerical equality to the optimum hole number in the cuprate high-Tc superconductors, a number that reflects the fractal nature of electronic response in superconductors. However, if one still keeps up the oxidation state of +3 of lanthanum, one will need 13 hydrogen atoms to match the optimum σ0. Such composition may be found at the phase boundary between the observed LaH10 and LaH16 phases. Partial ionic replacement is suggested to shift the super-hydride composition into the σ0 optimum. Micro-structural phenomena such as multiple twinning and ferroelastic behavior as observed with cuprates may also influence the superconductivity of super-hydrides. Finally, epitaxial growth of super-hydrides onto a specially cut diamond substrate is proposed.

关键词： Superconductivity Super-Hydride Clathrate LaH10 YH10 Faujasite High Pressure Optimum of Pairing Charge Carriers Slab Width Ionic Substitution epitaxial Growth Diamond Substrate Fractality

来源：

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Technical Note and Brief Overview of the Materials Science and Technology along with Designing Aspects for Development of Spintronic Devices with Optimum Efficiency

引用

Journal of Materials Science and Chemical Engineering 2020年第4期8卷 98-105页

作者： Ritu Walia Kamal Nain Chopra Maharaja Agrasen Institute of Technology GGSIP University New Delhi India Laser Science and Technology Centre DRDO Metcalfe House Delhi India Photonics Division Department of Physics Indian Institute of Technology Delhi India

One of the major challenges in designing and fabricating Spintronic devices is the choice of both, Materials and the Technology, along with understanding the intricacies of the Designing aspects. In this communication, we have attempted to briefly discuss these factors, with an aim to draw the attention of the Materials Scientists and Technologists to this serious challenge, in the direction of which, though a lot of research and development work has been done, still needs more concerted efforts to be made in order to make the Spintronic devices that can offer good efficiency for maximizing their usefulness.

关键词： Materials Science Technology and Designing Aspects of Spintronic Devices epitaxial growth Double Ion Beam Sputtering Technique Magnetic Tunnel Junctions Giant Magneto Resistance

来源：

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

欢迎您,

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

请选择保存的检索档案：

请选择收藏分类：

通借通还

欢迎您,

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：