检索结果-南通市图书馆

Mechanical properties of multi-scale germanium specimens from space solar cells under electron irradiation

Chinese Journal of Aeronautics 2024年第1期37卷 173-185页

作者： Jian QIU Maliya HEINI Jusha MA Wenjia HAN Xunchun WANG Jun YIN Yan SHI Cunfa GAO State Key Laboratory of Mechanics and Control of Mechanical Structures Nanjing University of Aeronautics and AstronauticsNanjing 210016China School of Chemistry and Civil Engineering Shaoguan UniversityShaoguan 512005China Key Laboratory of Functional Materials and Devices for Special Environments of Chinese Academy of Sciences Chinese Academy of SciencesUrumqi 830011China Shanghai Institute of Space Power-Sources Shanghai 200245China

During long-term service in space,Gallium Arsenide(GaAs)solar cells are directly exposed to electron irradiation which usually causes a dramatic decrease in their performance.In the multilayer structure of solar cells,the germanium(Ge)layer occupies the majority of the thickness as the substrate.Due to the intrinsic brittleness of semiconductor material,there exist various defects during the preparation and assembly of solar cells,the influences of which tend to be intensified by the irradiation effect.In this work,first,Ge specimens for mechanical tests were prepared at scales from microscopic to macroscopic.Then,after different doses of electron irradiation,the mechanical properties of the Ge specimens were investigated.The experimental results demonstrate that electron irradiation has an obvious effect on the mechanical property variation of Ge in diverse scales.The four-point bending test indicates that the elastic modulus,fracture strength,and maximum displacement of the Ge specimens all increase,and reach the maximum value at the irradiation dose of 1×10^(15)e/cm^(2).The micrometer scale cantilever and nanoindentation tests present similar trends for Ge specimens after irradiation.Atomic Force Microscope(AFM)also observed the change in surface roughness.Finally,a fitting model was established to characterize the relation between modulus change and electron irradiation dose.

关键词： electron irradiation Germanium Mechanical properties Multi-scale Space solar cells

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

Effects of Strain Channel on electron irradiation Tolerance of InP-based HEMT Structures

引用

原子能科学技术 2023年第12期57卷 2288-2294页

作者： FANG Renfeng CAO Wenyu WEI Yanfeng WANG Yin CHEN Chuanliang YAN Jiasheng XING Yan LIANG Guijie ZHOU Shuxing Hubei Key Laboratory of Low Dimensional Optoelectronic Materials and Devices Hubei University of Arts and ScienceXiangyang 441053China Hubei Key Laboratory of High Power Semiconductor Technology Hubei TECH Semiconductor Co.LtdXiangyang 441021China Hubei Longzhong Laboratory Xiangyang 441000China

The introduction of strain In_(x)Ga_(1-x)As channel with high In content increases the confinement of the two-dimensional electron gas(2DEG)and further improves the high-frequency performance of InGaAs/InAlAs/InP HEMTs.The effect of In_(x)Ga_(1-x)As channel with different In contents on electron irradiation tolerance of InP-based HEMT structures in terms of 2DEG mobility and density has been investigated.The experiment results show that,after the same high electron irradiation dose,the 2DEG mobility and density in InP-based HEMT structures with strain In_(x)Ga_(1-x)As(x>0.53)channel decrease more dramatically than that without strain In_(0.53)Ga_(0.47)As channel.Moreover,the degradation of 2DEG mobility and density becomes more severe as the increase of In content and strain in the In_(x)Ga_(1-x)As channel.The research results can provide some suggestions for the design of radiation-resistant InP-based HEMTs.

关键词： InP-based HEMT strain channel two-dimensional electron gas electron irradiation

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

electron irradiation effects on DC electrical performances of SiGe HBT in a comparison with Si BJT

引用

Rare Metals 2004年第4期23卷 330-339页

作者： MENGXiangti ZHANGXimin WANGJilin HUANGWentiao CHENPeiyi KLAHongyong InstituteofNuclearandNewEnergyTechnology TsinghuaUniversityBeijing100084China InstituteofMicroelectronics TsinghuaUniversityBeijing100084China

The DC characteristics of SiGe HBT irradiated at different electron dose havebeen studied in a comparison with those of Si B JT. Generally, I_b and I_b - I_(b0) increase, I_c,I_c -I_(c0) and its +/- transition V_(be) as well as DC current gain ft decreases with increasingdose; increase of I_b -I_(b0) with increasing dose for Si BIT is much larger than that for SiGe HBT;beta increases with V_(be) or I_b, but decreases at I_b electron trapshave been measured. The mechanism of changes of characteristics is discussed.

关键词： semiconductor technology SiGe HBT electron irradiation Si BJT DCelectrical performance

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

electron irradiation-induced change of structure and damage mechanisms in multi-walled carbon nanotubes

引用

Chinese Physics B 2015年第11期24卷 333-341页

作者：杨剑群李兴冀刘超铭马国亮高峰 School of Materials Science and Engineering Harbin Institute of Technology National Center for Nanoscience and Technology Chinese Academy of Sciences

Owing to their unique structure and excellent electrical property, carbon nanotubes （CNTs） as an ideal candidate for making future electronic components have great application potentiality. In order to meet the requirements for space appli- cation in electronic components, it is necessary to study structural changes and damage mechanisms of multi-walled carbon nanotubes （MWCNTs）, caused by the irradiations of 70 and 110 keV electrons. In the paper, the changes of structure and damage mechanisms in the irradiated MWCNTs, induced by the irradiations of 70 and 110 keV electrons, are investigated. The changes in surface morphology and structure of the irradiated MWCNT film are characterized using scanning electron microscopy （SEM）, x-ray photoelectron spectroscopy （XPS）, Raman spectroscopy, x-ray diffraction analysis （XRD）, and electron paramagnetic resonance （EPR） spectroscopy. It is found that the MWCNTs show different behaviors in structural changes after 70 and 110 keV electron irradiation due to different damage mechanisms. SEM results reveal that the irra- diation of 70 keV electrons does not change surface morphology of the MWCNT film, while the irradiation of 110 keV electrons with a high fluence of 5 x 1015 cm-2 leads to evident morphological changes, such as the formation of a rough surface, the entanglement of nanotubes and the shrinkage of nanotubes. Based on Raman spectroscopy, XPS, and XRD analyses, it is confirmed that the irradiation of 70 keV electrons increases the interlayer spacing of the MWCNTs and disorders their structure through electronic excitations and ionization effects, while the irradiation of 110 keV electrons obviously reduces the interlayer spacing of the MWCNTs and improves their graphitic order through knock-on atom dis- placements. The improvement of the irradiated MWCNTs by 110 keV electrons is attributed to the restructuring of defect sites induced by knock-on atom displacements. EPR spectroscopic analyses reveal that the MWCNTs exposed to both 70 keV electrons and 110 keV electr

关键词： electron irradiation multi-walled carbon nanotubes damage mechanisms Raman spectroscopy

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

Influence of electron irradiation on the switching speed in insulated gate bipolar transistors

引用

Journal of Semiconductors 2009年第6期30卷 76-78页

作者：卢烁今王立新陆江刘刚韩郑生 Institute of Microelectronics Chinese Academy of Sciences

The influence of electron irradiation on the switching speed in insulated gate bipolar transistors（IGBT） with different epitaxial layer thicknesses is discussed in detail.The experimental results prove that the fall time of IGBT increases when increasing the thickness of the epitaxial layer.However,there is no obvious difference between the ratios of the fall time after irradiation to those before irradiation for different epitaxial layer thicknesses.The increase in switching speed of the IGBT is accompanied by an increase in the forward drop,and a trade-off curve between forward voltage drop and fall time of IGBT is presented.

关键词： electron irradiation fall time switching speed IGBT

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

Characteristics of charge and discharge of PMMA samples due to electron irradiation

引用

Chinese Physics B 2015年第11期24卷 518-524页

作者：封国宝王芳胡天存曹猛 Key Laboratory for Physical electronics and Devices of the Ministry of Education Department of Electronic Science and TechnologyXi’an Jiaotong University National Key Laboratory of Science and Technology on Space Microwave

In this study, using a comprehensive numerical simulation of charge and discharge processes, we investigate the formation and evolution of negative charge and discharge characteristics of a grounded PMMA film irradiated by a non- focused electron beam. electron scattering and transport processes in the sample are simulated with the Monte Carlo and the finite-different time-domain （FDTD） methods, respectively. The properties of charge and discharge processes are presented by the evolution of internal currents, charge quantity, surface potential, and discharge time. Internal charge accumulation in the sample may reach saturation by primary electron （PE） irradiation providing the charge duration is enough. Internal free electrons will run off to the ground in the form of leakage current due to charge diffusion and drift during the discharge process after irradiation, while trapped electrons remain. The negative surface potential determined by the charging quantity decreases to its saturation in the charge process, and then increases in the discharge process. A larger thickness of the PMMA film will result in greater charge amount and surface potential in charge saturation and in final discharge state, while the electron mobility of the material has little effects on the final discharge state. Moreover, discharge time is less for smaller thickness or larger electron mobility. The presented results can be helpful for estimating and weakening the charging of insulating samples especially under the intermittent electron beam irradiation in related surface analysis or measurement.

关键词： charge and discharge PMMA numerical simulation electron irradiation

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

Dose rate effects on shape memory epoxy resin during 1 Me V electron irradiation in air

引用

Journal of Materials Science & Technology 2021年第8期67卷 61-69页

作者： Longyan Hou Yiyong Wu Debin Shan Bin Guo Yingying Zong State Key Laboratory of Advanced Welding and Joining Harbin Institute of TechnologyHarbin 150001China National Key Laboratory of Materials Behavior and Evaluation Technology in Space Environments Harbin Institute of TechnologyHarbin 150001China

The effects of 1 Me V electron irradiation in air at a fixed accumulated dose and dose rates of 393.8,196.9,78.8,and 39.4 Gy s^(-1)on a shape memory epoxy(SMEP)resin were studied.Under low-dose-rate irradiation,accelerated degradation of the shape memory performance was observed;specifically,the shape recovery ratio decreased exponentially with increasing irradiation time(that is,with decreasing dose rate).In addition,the glass transition temperature of the SMEP,as measured by dynamic mechanical analysis,decreased overall with decreasing dose rate.The dose rate effects of 1 Me V electron irradiation on the SMEP were confirmed by structural analysis using electron paramagnetic resonance(EPR)spectroscopy and Fourier transform infrared(FTIR)spectroscopy.The EPR spectra showed that the concentration of free radicals increased exponentially with increasing irradiation time.Moreover,the FTIR spectra showed higher intensities of the peaks at 1660 and 1720 cm^(-1),which are attributed to stretching vibrations of amide C=O and ketone/acid C=O,at lower dose rates.The intensities of the IR peaks at 1660 and 1720 cm^(-1) increased exponentially with increasing irradiation time,and the relative intensity of the IR peak at 2926 cm^(-1)decreased exponentially with increasing irradiation time.The solid-state13 C nuclear magnetic resonance(NMR)spectra of the SMEP before and after 1 Me V electron irradiation at a dose of 1970 k Gy and a dose rate of 78.8 Gy s^(-1) indicated damage to the CH_(2)–N groups and aliphatic isopropanol segment.This result is consistent with the detection of nitrogenous free radicals,a phenoxy-type free radical,and several types of pyrolytic carbon radicals by EPR.During the subsequent propagation process,the free radicals produced at lower dose rates were more likely to react with oxygen,which was present at higher concentrations,and form the more destructive peroxy free radicals and oxidation products such as acids,amides,and ketones.The increase in peroxy free radicals at lower dose rates was thought t

关键词： Shape memory epoxy resin Shape memory effect electron irradiation Dose rate effect Free radical Chain scission

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

Improved electrical properties of NO-nitrided SiC/SiO2 interface after electron irradiation

引用

Chinese Physics B 2020年第9期29卷 470-475页

作者：郝继龙白云刘新宇李诚瞻汤益丹陈宏田晓丽陆江王盛凯 Institute of Microelectronics Chinese Academy of SciencesBeijing 100029China University of Chinese Academy of Sciences Beijing 100049China Zhuzhou CRRC Times Electric Co. Ltd.Zhuzhou 412000China

Effective improvement in electrical properties of NO passivated SiC/SiO2 interface after being irradiated by electrons is demonstrated.The density of interface traps after being irradiated by 100-kGy electrons decreases by about one order of magnitude,specifically,from 3×1012 cm-2·eV-1 to 4×1011 cm-2·eV-1 at 0.2 eV below the conduction band of 4H-SiC without any degradation of electric breakdown field.Particularly,the results of x-ray photoelectron spectroscopy measurement show that the C-N bonds are generated near the interface after electron irradiation,indicating that the carbon-related defects are further reduced.

关键词： SiC electron irradiation interface traps MOS

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

Charging dynamics of a polymer due to electron irradiation:A simultaneous scattering-transport model and preliminary results

引用

Chinese Physics B 2012年第12期21卷 487-493页

作者：曹猛王芳刘婧张海波 Key Laboratory for Physical electronics and Devices of the Ministry of Education Department of Electronic Science and TechnologyXi'an Jiaotong University

We present a novel numerical model and simulate preliminarily the charging process of a polymer subjected to electron irradiation of several 10 keV. The model includes the simultaneous processes of electron scattering and ambipolar transport and the influence of a self-consistent electric field on the scattering distribution of electrons. The dynamic spatial distribution of charges is obtained and validated by existing experimental data. Our simulations show that excess negative charges are concentrated near the edge of the electron range. However, the formed region of high charge density may extend to the surface and bottom of a kapton sample, due to the effects of the electric field on electron scattering and charge transport, respectively. Charge trapping is then demonstrated to significantly influence the charge motion. The charge distribution can be extended to the bottom as the trap density decreases. Charge accumulation is therefore balanced by the appearance and increase of leakage current. Accordingly, our model and numerical simulation provide a comprehensive insight into the charging dynamics of a polymer irradiated by electrons in the complex space environment.

关键词： electron irradiation charging dynamics electron scattering charge transport polymer

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

Effects of 1.0-11.5 MeV electron irradiation on GaInP/GaAs/Ge Triple-junction Solar Cells for Space Applications

引用

Chinese Physics Letters 2014年第8期31卷 103-105页

作者：王荣鲁明易天成杨魁姬小霞 KeyLaboratoryofBeamTechnologyandMaterialsModificationofMinistryofEducation CollegeofNuclearScienceandTechnologyBeijingNormalUniversityBeijing100875 BeijingRadiationCenter BeijingNormalUniversityBeijing100875

GalnP/GaAs//Ge triple-junction solar cells are irradiated with 1.0, 1.8, and 11.5 MeV electrons with fluence rang- ing up to 3 × 10^15, 3×10^15, and 3×10^14cn^-2, respectively. Their performance degradation effects are analyzed by using current-voltage characteristics, spectral response measurements, and electron irradiation-induced dis- placements. The degradation rates of the maximum power and the spectral response of the solar cells increase with the electron fluence, and also increase with the increasing electron energy. It is observed that the spectral response of the GaAs middle cell degrades more significantly than that of the GaInP top cell.

关键词： electron irradiation

来源：

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

欢迎您,

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

请选择保存的检索档案：

请选择收藏分类：

通借通还

欢迎您,

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：