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Research on Measurement Accuracy of the double-channel Microwave Power Sensors Based on an MEMS Cantilever Beam

Chinese Journal of Electronics 2019年第5期28卷 916-919页

作者： WANG Debo WU Lele LI Longfei DAI Ruiping Nanjing University of Posts and Telecommunication

A thermopile-based microwave power sensor and a double-channel microwave power sensor are compared in order to research the measurement accuracy of microwave power. The relationship of the displacement of MEMS cantilever beam with the measured microwave power is researched, and the reason that the microwave power consumed by the MEMS cantilever cannot be ignored at low power level is *** ratio of microwave power consumed by the MEMS cantilever with the microwave frequency is obtained,and the measured results show that the percentage is 51.96%@8 GHz, 52.31%@10 GHz and 55.11%@12 GHz on the average, respectively. There is an important reference value to achieve the accurate microwave power measurement of the double-channel microwave power sensors.

关键词： Thermopile-based power sensor MEMS cantilever double-channel Measurement accuracy

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AIGaN/GaN double-channel HEMT

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Journal of Semiconductors 2010年第4期31卷 25-27页

作者：全思郝跃马晓华郑鹏天谢元斌 Xidian University

The fabrication of AlGaN/GaN double-channel high electron mobility transistors on sapphire substrates is reported. Two carrier channels are formed in an AlGaN/GaN/A1GaN/GaN multilayer structure. The DC performance of the resulting double-channel HEMT shows a wider high transconductance region compared with single-channel HEMT. Simulations provide an explanation for the influence of the double-channel on the high transconductance region. The buffer trap is suggested to be related to the wide region of high transconductance. The RF characteristics are also studied.

关键词： high-electron mobility transistor AlGaN/GaN/A1GaN/GaN double-channel

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Novel double channel reverse conducting GaN HEMT with an integrated MOS-channel diode

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中国物理B:英文版 2023年第9期32卷 97-102页

作者：谢欣桐张成赵智家魏杰罗小蓉张波 School of Electronic Science and Engineering University of Electronic Science and Technology of ChinaChengdu 610054China

A novel normally-off double channel reverse conducting(DCRC)HEMT with an integrated MOS-channel diode(MCD)is proposed and investigated by TCAD *** proposed structure has two features:one is double heterojunctions to form dual 2DEG channels named the 1^(st)path and the 2^(nd)path for reverse conduction,and the other is the MCD forming by the trench source metal,source dielectric,and Ga *** the initial reverse conduction stage,the MCD acts as a switch to control the 1^(st)path which would be turned on prior to the 2^(nd)*** of the introduction of the 1^(st)path,the DCRC-HEMT has an additional reverse conducting channel to help enhance the reverse conduction *** with the conventional HEMT(***),the DCRC-HEMT can obtain a low reverse turn-on voltage(VRT)and its VRTis independent of the gate-source bias(VGS)at the same *** DCRC-HEMT achieves the VRTof 0.62 V,which is 59.7%and 75.9%lower than that of the *** at VGS=0 V and-1 V,*** addition,the forward conduction capability and blocking characteristics almost remain *** the end,the key fabrication flows of DCRC-HEMT are presented.

关键词： AlGaN/GaN HEMT double-channel reverse conduction

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