检索结果-南通市图书馆

Device and circuit analysis of a sub 20 nm double gate mosfet with gate stack using a look-up-table-based approach

Journal of Semiconductors 2017年第12期38卷 37-41页

作者： S Chakraborty A Dasgupta R Das M Kar A Kundu C K Sarkar Department of Electronics and Communications Engineering Heritage Institute of Technology Kolkata 700107India Nano Device Simulation Laboratory Department of Electronics and Telecommunication EngineeringJadavpur UniversityKolkata 700032India

In this paper, we explore the possibility of mapping devices designed in TCAD environment to its modeled version developed in cadence virtuoso environment using a look-up table （LUT） approach. Circuit simu- lation of newly designed devices in TCAD environment is a very slow and tedious process involving complex scripting. Hence, the LUT based modeling approach has been proposed as a faster and easier alternative in ca- dence environment. The LUTs are prepared by extracting data from the device characteristics obtained from device simulation in TCAD. A comparative study is shown between the TCAD simulation and the LUT-based alternative to showcase the accuracy of modeled devices. Finally the look-up table approach is used to evaluate the perform- ance of circuits implemented using 14 nm nmosfet.

关键词： 14 nm double gate mosfet look-up table VerilogA

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

A Finite Volume Method for the Multi Subband Boltzmann Equation with Realistic 2D Scattering in double gate mosfets

引用

Communications in Computational Physics 2011年第7期10卷 305-338页

作者： Tiao Lu Gang Du Xiaoyan Liu Pingwen Zhang School of Mathematical Sciences LMAM and CAPTPeking UniversityBeijing 100871China Institute of Microelectronics Peking UniversityBeijing 100871China

We propose a deterministic solver for the time-dependent multi-subband Boltzmann transport equation(MSBTE)for the two dimensional(2D)electron gas in double gate metal oxide semiconductor field effect transistors(mosfets)with flared out source/drain contacts.A realistic model with six-valleys of the conduction band of silicon and both intra-valley and inter-valley phonon-electron scattering is *** propose a second order finite volume method based on the positive and flux conservative(PFC)method to discretize the Boltzmann transport equations(BTEs).The transport part of the BTEs is split into two *** is a 1D transport problem in the position space,and the other is a 2D transport problem in the wavevector *** order to reduce the splitting error,the 2D transport problem in the wavevector space is solved directly by using the PFC method instead of splitting into two 1D *** solver is applied to a nanoscale double gate mosfet and the current-voltage characteristic is *** of the numerical results with ballistic solutions show that the scattering influence is not ignorable even when the size of a nanoscale semiconductor device goes to the scale of the electron mean free path.

关键词： double gate mosfet multi subband Boltzmann transport equation 2D electron gas deterministic solver PFC method

来源：

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Modeling the drain current and its equation parameters for lightly doped symmetrical double-gate mosfets

引用

Journal of Semiconductors 2015年第4期36卷 44-50页

作者： Mini Bhartia Arun Kumar Chatterjee Electronics and Communication Department Thapar Institute of Engineering and Technology

A 2D model for the potential distribution in silicon film is derived for a symmetrical double gate MOS- FET in weak inversion. This 2D potential distribution model is used to analytically derive an expression for the subthreshold slope and threshold voltage. A drain current model for lightly doped symmetrical DG mosfets is then presented by considering weak and strong inversion regions including short channel effects, series source to drain resistance and channel length modulation parameters. These derived models are compared with the simulation results of the SILVACO （Atlas） tool for different channel lengths and silicon film thicknesses. Lastly, the effect of the fixed oxide charge on the drain current model has been studied through simulation. It is observed that the obtained analytical models of syrnmetrical double gate mosfets are in good agreement with the simulated results for a channel length to silicon film thickness ratio greater than or equal to 2.

关键词： double gate mosfet 2D potential distribution model drain current model

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

欢迎您,

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

在线全文

在线全文

请选择保存的检索档案：

请选择收藏分类：

通借通还

欢迎您,

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

在线全文

在线全文

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：