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Continuous surface potential versus voltage equation of intrinsic surrounding-gate MOSFETs and analytic solution from accumulation to strong inversion region

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Journal of Semiconductors 2010年第6期31卷 27-33页

作者：何进郑睿张立宁张健林信南陈文新 Department of Electronics and Computer Engineering Hong Kong University of Science & Technology Micro & Nano Electric device and Integrated Technology Group Key Laboratory of Integrated MicrosystemsPeking UniversityShenzhen Graduate School Micro & Nano Electric device and Integrated Technology Group Key Laboratory of Integrated Microsystems Peking UniversityShenzhen Graduate School

A continuous surface potential versus voltage equation is proposed and then its solution is further discussed for a long channel intrinsic surrounding-gate（SRG） MOSFET from the accumulation to strong inversion *** original equation is derived from the exact solution of a simplified Poisson equation and then the empirical correction is performed from the mathematical condition required by the continuity of the solution,which results in a continuous surface potential versus voltage equation,allowing the surface potential and the related derivatives to be described by an analytic solution from the accumulation to strong inversion region and from linear to the saturation region accurately and *** these results,the dependences of surface potential and centric potential characteristics on device geometry are analyzed and the results are also verified with the 3-D numerical simulation from the aspect of accuracy and continuity tests.

关键词： non-classical CMOS surrounding-gate MOSFETs device physics surface potential accuracy continuity issue

device design principles and bioelectronic applications for flexible organic electrochemical transistors

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International Journal of Extreme Manufacturing 2024年第1期6卷 126-153页

作者： Lin Gao Mengge Wu Xinge Yu Junsheng Yu State Key Laboratory of Electronic Thin Films and Integrated devices School of Optoelectronic Science and EngineeringUniversity of Electronic Science and Technology of China(UESTC)Chengdu 610054People’s Republic of China Department of Biomedical Engineering City University of Hong KongHong Kong Special Administrative Region of ChinaPeople’s Republic of China

Organic electrochemical transistors(OECTs) exhibit significant potential for applications in healthcare and human-machine interfaces, due to their tunable synthesis, facile deposition, and excellent biocompatibility. Expanding OECTs to the fexible devices will significantly facilitate stable contact with the skin and enable more possible bioelectronic applications. In this work,we summarize the device physics of fexible OECTs, aiming to offer a foundational understanding and guidelines for material selection and device architecture. Particular attention is paid to the advanced manufacturing approaches, including photolithography and printing techniques, which establish a robust foundation for the commercialization and large-scale fabrication. And abundantly demonstrated examples ranging from biosensors, artificial synapses/neurons, to bioinspired nervous systems are summarized to highlight the considerable prospects of smart healthcare. In the end, the challenges and opportunities are proposed for fexible OECTs. The purpose of this review is not only to elaborate on the basic design principles of fexible OECTs, but also to act as a roadmap for further exploration of wearable OECTs in advanced bio-applications.

关键词： flexible organic electrochemical transistors wearable bioelectronics manufacturing approaches device physics neuromorphic applications

A surface potential-based non-charge-sheet core model for undoped surrounding-gate MOSFETs

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Journal of Semiconductors 2009年第2期30卷 30-33页

作者：何进张健张立宁马晨月陈文新 The Key Laboratory of Integrated Microsystems Peking University Shenzhen Graduate School TSRC and ULTRAS Team EECSPeking University Department of Electronics and Computer Engineering Hong Kong University of Science & Technology

A surface potential based non-charge-sheet core model for cylindrical undoped surrounding-gate （SRG） MOSFETs is presented. It is based on the exact surface potential solution of Poisson＇s equation and Pao-Sah＇s dual integral without the charge-sheet approximation, allowing the SRG-MOSFET characteristics to be adequately described by a single set of the analytic drain current equation in terms of the surface potential evaluated at the source and drain ends. It is valid for all operation regions and traces the transition from the linear to saturation and from the sub-threshold to strong inversion region without fitting-parameters, and verified by the 3-D numerical simulation.

关键词： non-classical MOS transistor surrounding-gate MOSFETs device physics surface potential model non-charge-sheet approximation

Semiconductor nanostructures enabled by aerosol technology

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Frontiers of physics 2014年第3期9卷 398-418页

作者： Martin H. Magnusson B. Jonas Ohlsson Mikael T. Bjork Kimberly A. Dick Magnus T. Borgstrom Knut Deppert Lars Samuelson Solid State physics Lund University Box 118 SE-22100 Lund Sweden Sol Voltaics AB Ideon Science Park Scheelevagen 17 SE-22370 Lund Sweden QuNano AB Ideon Science Park Scheelevaigen 17 SE-22370 Lund Sweden Center for Analysis and Synthesis Lund University Box 124 SE-22100 Lund Sweden

Aerosol technology provides efficient methods for producing nanoparticles with well-controlled composition and size distribution. This review provides an overview of methods and results obtained by using aerosol technology for producing nanostruetures for a variety of applications in semiconductor physics and device technology. Examples are given from： production of metal and metal alloy particles： semiconductor nanoparticles; semiconductor nanowires, grown both in the aerosol phase and on substrates; physics studies based on individual aerosol-generated devices; and large area deviees based on aerosol particles.

关键词： aerosol nanoparticle nanowire metal-organic vapor phase epitaxy (MOVPE) device physics light emitting diodes (LED) solar cell

Development of polymer–fullerene solar cells

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National Science Review 2016年第2期3卷 222-239页

作者： Fengling Zhang Olle Ingans Yinhua Zhou Koen Vandewal Biomolecular and organic electronics Department of PhysicsChemistry and Biology(IFM)Linkoping University Wuhan National Laboratory for Optoelectronics Huazhong University of Science and Technology Institut fr Angewandte Photophysik Technische Universitt Dresden

Global efforts and synergetic interdisciplinary collaborations on solution-processed bulk-heterojunction polymer solar cells(PSCs or OPVs) made power conversion efficiencies over 10%*** rapid progress of the field is credited to the synthesis of a large number of novel polymers with specially tunable optoelectronic properties,a better control over the nano-morphology of photoactive blend layers,the introduction of various effective interfacial layers,new device architectures and a deeper understanding of device *** will review the pioneering materials for polymer-fullerene solar cells and trace the progress of concepts driving their *** discuss the evolution of morphology control,interfacial layers and device structures fully exploring the potential of photoactive *** order to guide a further increase in power conversion efficiency of OPV,the current understanding of the process of free charge carrier generation and the origin of the photovoltage is summarized followed by a perspective on how to overcome the limitations for industrializing PSCs.

关键词： polymer-fullerene solar cells electron donors and acceptors morphology interfacial layer device physics

Coeffect of trapping behaviors on the performance of GaN-based devices

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Journal of Semiconductors 2018年第9期39卷 50-54页

作者： Xingye Zhou Xin Tan Yuangang Wang Xubo Song Peng Xu Guodong Gu Yuanjie Lü Zhihong Feng National Key Laboratory of ASIC Hebei Semiconductor Research Institute

Trap-induced current collapse has become one of the critical issues hindering the improvement of Ga Nbased microwave power devices. It is difficult to study the behavior of each trapping effect separately with the experimental measurement. Transient simulation is a useful technique for analyzing the mechanism of current collapse. In this paper, the coeffect of surface-and bulk-trapping behaviors on the performance of Al Ga N/Ga N HEMTs is investigated based on the two-dimensional（2 D） transient simulation. In addition, the mechanism of trapping effects is analyzed from the aspect of device physics. Two simulation models with different types of traps are used for comparison, and the simulated results reproduced the experimental measured data. It is found that the final steady-state current decreases when both the surface and bulk traps are taken into account in the ***, contrary to the expectation, the total current collapse is dramatically reduced（e.g. from 18% to 4% for the 90 nm gate-length device）. The results suggest that the surface-related current collapse of Ga N-based HEMTs may be mitigated in some degree due to the participation of bulk traps with short time constant. The work in this paper will be helpful for further optimization design of material and device structures.

关键词： GaN-based HEMT device physics trapping effect transient simulation

Simulation of Gate-All-Around Cylindrical Transistors for Sub-10 Nanometer Scaling

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Journal of Semiconductors 2008年第3期29卷 447-457页

作者：肖德元谢志峰季明华王曦俞跃辉中芯国际集成电路制造(上海)有限公司上海201203 中国科学院上海微系统与信息技术研究所上海200050

A gate-all-around cylindrical （GAAC） transistor for sub-10nm scaling is proposed. The GAAC transistor device physics,TCAD simulation,and proposed fabrication procedure are reported for the first time. Among all other novel FinFET devices, the gate-all-around cylindrical device can be particularly applied for reducing the problems of the conventional multi-gate FinFET and improving the device performance and the scale down capability. According to our simulation,the gate-all-around cylindrical device shows many benefits over conventional multi-gate FinFET, including gate-all- around rectangular （GAAR） devices. With gate-all-around cylindrical architecture,the transistor is controlled by an essen- tially infinite number of gates surrounding the entire cylinder-shaped channel. The electrical integrity within the channel is improved by reducing the leakage current due to the non-symmetrical field accumulation such as the corner effect. The proposed fabrication procedures for devices having GAAC device architecture are also discussed. The method is characterized by its simplicity and full compatibility with conventional planar CMOS technology.

关键词： gate-all-around cylindrical transistor device physics TCAD simulation fabrication procedure

BSIM Model Research and Recent Progress

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Journal of Semiconductors 2006年第3期27卷 388-396页

作者：何进陈文新奚雪梅宛辉品书阿里.力克纪达胡正明北京大学微电子学研究院北京100871 香港科技大学电子和电气工程系美国Berkeley加州大学电气和计算机科学工程系

The continued development of CMOS technology and the emergence of new applications demand continued improvement and enhancement of compact models. This paper outlines the recent work of the BSIM project at the University of California, Berkeley,including BSIM5 research, BSIM4 enhancements, and BSIMSOI development. BSIM5 addresses the needs of nano-CMOS technology and RF high-speed CMOS circuit simulation. BSIM4 is a mature industrial standard MOSFET model with several improvements to meet the technology requirements. BSIMSOI is developed into a generic model framework for PD and FD SOI technology. An operation mode choice,via the calculation of the body potential △Vbi and body current/charge,helps circuit designers in the trend of the coexistence of PD and FD devices.

关键词： compact modeling BSIM5 BSIM4 BSIMSOI device physics MOSFETs

A Complete Surface Potential-Based Core Model for Undoped Symmetric Double-Gate MOSFETs

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Journal of Semiconductors 2008年第11期29卷 2092-2097页

作者：何进张立宁张健傅越郑睿张兴北京大学深圳研究生院集成微系统重点试验室深圳518055 北京大学信息科学技术学院北京100871

A surface potential-based model for undoped symmetric double-gate MOSFETs is derived by solving Poisson＇s equation to obtain the relationship between the surface potential and voltage in the channel region in a self-consistent way. The drain current expression is then obtained from Pao-Sah＇s double integral. The model consists of one set of surface potential equations,and the analytic drain current can be evaluated from the surface potential at the source and drain ends. It is demonstrated that the model is valid for all operation regions of the double-gate MOSFETs and without any need for simplification （e. g., by using the charge sheet assumption） or auxiliary fitting functions. The model has been verified by extensive comparisons with 2D numerical simulation under different operation conditions with different geometries. The consistency between the model calculation and numerical simulation demonstrates the accuracy of the model.

关键词： bulk MOSFET limit non-classical CMOS double-gate MOSFET device physics surface potential-based model