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Electroluminescent Polymers and Carbon Nanotubes for Flat Panel Displays

材料科学与工程学报 2000年第Z1期20卷 444-453页

作者： Liming Dai CSIRO Molecular Science Bag 10Clayton South Victcria 3169 Australia

polymeric light-emitting diodes(LEDs) with sufficient brightness. efficiencies, low driving voltages, and various interesting features have been reported. The relatively short device lifetime, however, still remains as a major problem to be solved before any commercial applications will be realized. In this regard,carbon nanotubes have recently been proposed as more robust electron field emitters for flat panel displays. We have synthesised large arrays of vertically aligned carbon nanotubes, from which micropatterns of the aligned nanotubes suitable for flat panel displays were fabricated on various substrates. In this paper, we summarise our work on the synthesis and microfabrication of electroluminescent polymers and carbon nanotubes for flat panel displays with reference to other complementary work as appropriate.

关键词： Flat Panel Displays flat panel displays aligned carbon nanotubes electroluminescent polymers device lifetime major problem

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Channel Hot-Carrier-Induced Breakdown of PDSOI NMOSFET's

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Journal of Semiconductors 2001年第8期22卷 1038-1043页

作者：刘红侠郝跃朱建纲西安电子科技大学微电子所西安710071

The hot-carrier-induced oxide breakdown i s systematically clarified for partially depleted SOI NMOSFET's fabricated on SI MOX *** gate oxide properties are considered to analyze the channel hot-c arrier ***-carrier-induced device degradations are also analyzed by st ress experiments under three typical hot-carrier injection *** on these results,the influence of channel hot carriers on SOI NMOSFET's front-chan nel properties is investigated.A power time dependence extrapolation technique i s proposed to predict the device's *** results show that the N MOSFET's degradation is caused by the hot-holes,which are injected into the gat e oxide from the drain and then trapped near the drain ***,the electron s trapped in the gate oxide can accelerate the gate *** two simultaneo us breakages of Si-O bonds at a Si atom lead to the irreversible relaxation of the oxide network.A novel physical mechanism of channel hot-carrier-induced ga te oxide breakdown is also presented.

关键词： Hot-Carrier Effects (HCE) device lifetime SOI NMOSFET's SIMOX

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A STUDY ON HOT-CARRIER-INDUCED GATE OXIDE BREAKDOWN IN PARTIALLY DEPLETED SIMOX MOSFET'S

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Journal of Electronics(China) 2002年第1期19卷 50-56页

作者： Liu Hongxia Hao Yue Zhu Jiangang (Microelectronics Institute, Xidian University, Xi’an 710071) Microelectronics Institute Xidian University Xi’an

The hot-carrier-induced oxide regions in the front and back interfaces are systematically studied for partially depleted SOI MOSFET's. The gate oxide properties are investigated for channel hot-carrier effects. The hot-carrier-induced device degradations are analyzed using stress experiments with three typical hot-carrier injection, i.e., the maximum gate current, maximum substrate current and parasitic bipolar transistor action. Experiments show that PMOSFET's degradation is caused by hot carriers injected into the drain side of the gate oxide and the types of trapped hot carrier depend on the bias conditions, and NMOSFET's degradation is caused by hot holes. This paper reports for the first time that the electric characteristics of NMOSFET's and PMOSFET's are significantly different after the gate oxide breakdown, and an extensive discussion of the experimental findings is provided.

关键词： Hot-Carrier Effects (HCE) device lifetime SOI MOSFET SIMOX

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