A STUDY ON HOT-CARRIER-INDUCED GATE OXIDE BREAKDOWN IN PARTIALLY DEPLETED SIMOX MOSFET'S

作     者：Liu Hongxia Hao Yue Zhu Jiangang (Microelectronics Institute, Xidian University, Xi’an 710071) Liu Hongxia Hao Yue Zhu Jiangang (Microelectronics Institute, Xidian University, Xi’an 710071)

作者机构：Microelectronics Institute Xidian University Xi’an 

出 版 物：《Journal of Electronics(China)》 (电子科学学刊（英文版）)

年 卷 期：2002年第19卷第1期

页      面：50-56页

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：Supported by the National Advance Research Foundation of China.(No.9825741) 

主　　题：Hot-Carrier Effects (HCE) Device lifetime SOI MOSFET SIMOX 

摘      要：The hot-carrier-induced oxide regions in the front and back interfaces are systematically studied for partially depleted SOI MOSFET s. The gate oxide properties are investigated for channel hot-carrier effects. The hot-carrier-induced device degradations are analyzed using stress experiments with three typical hot-carrier injection, i.e., the maximum gate current, maximum substrate current and parasitic bipolar transistor action. Experiments show that PMOSFET s degradation is caused by hot carriers injected into the drain side of the gate oxide and the types of trapped hot carrier depend on the bias conditions, and NMOSFET s degradation is caused by hot holes. This paper reports for the first time that the electric characteristics of NMOSFET s and PMOSFET s are significantly different after the gate oxide breakdown, and an extensive discussion of the experimental findings is provided.