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Crystallization and characteristics of {100}-oriented diamond with CH4N2S additive under high pressure and high temperature

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Chinese Physics B 2020年第9期29卷 549-552页

作者： Yong Li Debing Tan Qiang Wang Zhengguo Xiao Changhai Tian Lin Chen Department of Physics and Electrical Engineering Tongren UniversityTongren 554300China

diamond crystallization was carried out with CH4N2S additive in the FeNiCo-C system at pressure 6.0 GPa and temperature ranging from 1290 ℃ to 1300 ℃. The crystallization qualities of the synthetic crystals were characterized by Raman spectra and the Raman peaks located at 1331 cm-1. Fourier transform infrared (FTIR) results showed that the hydrogen-related absorption peak of the as-grown diamond was at 2920 cm-1, respectively. Interestingly, A-center nitrogen was observed in the obtained diamond and the characteristic absorption peaks located at 1095 cm-1 and 1282 cm-1. Especially, the absorption peak at 1426 cm-1 attributing to the aggregation B-center nitrogen defect was distinctly found when the CH4N2S content reached 0.3 mg in the synthesis system, which was extremely rare in synthetic diamond. Furthermore, optical color centers in the synthesized crystals were investigated by photoluminescence (PL).

关键词： high pressure and high temperature diamond crystallization characteristics

Highly Oriented diamond Film Growth by Atomic Force Microscopy

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Chinese Physics Letters 1998年第11期15卷 822-824页

作者： LI Jian-long MENG Ge WU Ke-hui WANG En-ge State Key Laboratory for Surface Physics Institute of PhysicsChinese Academy of SciencesBeijing 100080

diamond thin films are grown with microwave plasma chemical vapor deposition method on silicon(100)substrates from methane/hydrogen gas mixture,and characterized with atomic force microscopy The results show that most of the diamond crystallites are highly oriented with the(100)planes parallel to the silicon *** structures are found in the film,indicating a combination of layer-by-layer and island *** spectrum and x-ray diffraction also confirm the present results.

关键词： diamond layer island

Si/Nanocrystalline diamond Film Heterojunction Diodes Preparation

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Journal of Rare Earths 2006年第z1期24卷 45-48页

作者： Wu Nanchun Xia Yiben Tan Shouhong Wang Linjun Cui Jiangtao School of Materials Science & Engineering Shanghai University Shanghai 200072 China Shanghai Institute of Ceramics Chinese Academy of China Shanghai 200050 China School of Materials Science & Engineering Shanghai University Shanghai 200072 China Shanghai Institute of Ceramics Chinese Academy of China Shanghai 200050 China School of Materials Science & Engineering Shanghai University Shanghai 200072 China School of Materials Science & Engineering Shanghai University Shanghai 200072 China

With electron assisted hot filament chemical vapor deposition technology, nanocrystalline diamond films were deposited on polished n-(100)Si wafer surface. The deposited films were characterized and observed by Raman spectrum, X-ray diffraction, semiconductor characterization system and Hall effective measurement system. The results show that with EA-HFCVD, not only an undoped nanocrystalline diamond films with high-conductivity (p-type semiconducting) but also a p-n heterojunction diode between the nanocrystalline diamond films and n-Si substrate is fabricated successfully. The p-n heterojunction has smaller forward resistance and bigger positive resistance. The p-n junction effective is evident.

关键词： nanocrystalline diamond film p-n heterojunction diode rectification characterization EACVD

Dependence of nitrogen vacancy color centers on nitrogen concentration in synthetic diamond

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Chinese Physics B 2022年第4期31卷 534-537页

作者： Yong Li Xiaozhou Chen Maowu Ran Yanchao She Zhengguo Xiao Meihua Hu Ying Wang Jun An Department of Physics and Electrical Engineering Tongren UniversityTongren 554300China School of Mechanical Electronic and Information Engineering China University of Mining and TechnologyBeijing 100083China School of Materials Science and Engineering Henan Polytechnic UniversityJiaozuo 454003China

Crystallization of diamond with different nitrogen concentrations was carried out with a FeNiCo-C system at pressure of 6.5 *** the nitrogen concentration in diamond increased,the color of the synthesized diamond crystals changed from colorless to yellow and finally to atrovirens(a dark green).All the Raman peaks for the obtained crystals were located at about 1330 cm^(-1)and contained only the sp^(3)hybrid diamond *** on Fourier transform infrared results,the nitrogen concentration of the colorless diamond wasdiamond reached 1030 ppm and the value of A-center nitrogen was approximately 180 ppm with a characteristic absorption peak at 1282 cm^(-1).Furthermore,neither the NV^(0)nor the NV^(-)optical color center existed in diamond crystal with nitrogen impurities of less than 1 ppm by photoluminescence ***,Ni-related centers located at 695 nm and 793.6 nm were observed in colorless *** NE8 color center at 793.6 nm has more potential for application than the common NV ***^(0)and NV^(-)optical color centers coexist in diamond without any additives in the synthesis ***,only the NV^(-)color center was noticed in diamond with a higher nitrogen concentration,which maximized optimization of the NV^(-)/NV^(0)ratio in the diamond *** study has provided a new way to prepare diamond containing only NV^(-)optical color centers.

关键词： high pressure and high temperature diamond nitrogen-vacancy color centers

Tensile-strain induced phonon splitting in diamond

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Chinese Physics B 2019年第5期28卷 71-74页

作者： Meifang Pu Feng Zhang Shan Liu Tetsuo Irifune Li Lei Institute of Atomic and Molecular Physics Sichuan University Geodynamics Research Center Ehime University

The first-order Raman spectroscopy of diamond exhibits splitting and redshift after the burst of high-pressure(160–200 GPa) and high-temperature(～2000 K). The observed longitudinal optical(LO) and the transverse optical(TO) splitting of Raman phonon is related to the tensile-strain induced activation of the forbidden or silent Raman modes that arise in the proximity of the Brillouin zone center.

关键词： diamond tensile-strain phonon splitting Brillouin zone

Investigation of diamond Films Deposited on LaAlO_(3) Single Crystal Substrates by Hot Filament Chemical Vapor Deposition

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Chinese Physics Letters 1998年第2期15卷 146-148页

作者： SHANG Nai-gui FANG Rong-chuan HANG Yin LI Jin-qiu HAN Si-jin SHAO Qing-yi CUI Jing-biao XU Cun-yi Department of Physics University of Science and Technology of ChinaHefei 230026 Structure Research Laboratory University of Science and Technology of ChinaHefei 230026 Anhui Institute of Optics and Fine Mechanics Chinese Academy of SciencesHefei 230026

diamond nucleation and growth on a LaAlO_(3) single crystal substrate,whose lattice mismatch with diamond is only 7.2%at high temperature,were investigated for the first *** an insulating substrate,a nucleation density of more than 108 cm_(-2) was achieved on ultrasonically cleaned wafers.A free-standing diamond film was obtained for 65 h growth and characterized by scanning electron microscopy,Raman and x-ray photoelectron *** results show that LaAIO3 single crystal is a good candidate substrate for diamond film growth.

关键词： spectroscopy. diamond film

Fine Structural and Carbon Source Analysis for diamond Crystal Growth using an Fe-Ni-C System at High Pressure and High Temperature

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Chinese Physics Letters 2012年第4期29卷 229-231页

作者： FAN Xiao-Hong XU Bin NIU Zhen ZHAI Tong-Guang TIAN Bin School of Material Science and Engineering Shandong UniversityJi’nan 250101 School of Materials Science and Engineering Shandong Jianzhu UniversityJi’nan 250101 Department of Chemical and Materials Engineering University of KentuckyLexingtonUSA

diamond is synthesized in an Fe-Ni-C system at high pressure and high temperature,the C sp^(3) content profile through different thicknesses of interface between diamond and the catalyst film is measured by using electron energy loss *** is found that the Csp^(3) content varies from 87.33% to 78.15% when the measured position is located at the inner face near the diamond and then changes to 6 μm further *** electron microscope examinations show that there are different phases in the interface,such as Fe3C,γ-(Fe,Ni),and graphite,but the graphite phase diminishes gradually towards the inner face of the *** results profoundly indicate that the carbon atoms,required for diamond growth,could only come from the carbon-rich phase,Fe3C,but not directly from the *** is possible that carbon atoms from the graphite in the interface first react with Fe atoms to produce carbide Fe3 C during diamond synthesis at high pressure and high *** Fe3 C finally decomposes into carbon atoms with the sp^(3) electron state at the interface to form the diamond.

关键词： spectroscopy carbide diamond

Deposition of tungsten-titanium carbides on surface of diamond by reactive PVD

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中国有色金属学会会刊：英文版 1999年第4期9卷 838-841页

作者：胡国荣杨建红刘业翔杨凯华汤凤林金继红 Cent S Univ Technol Dept Nonferrous Met Changsha 410083 Peoples R China China Univ Geosci Inst Technol Wuhan 430074 Peoples R China

The coatings of W-Ti carbides on the surface of diamond was obtained by using physical vapor deposition (PVD), during which WO3 powders pre-treated with hydrofluoric acid were reduced by titanium hydride in vacuum at 850 ℃. The resistance of diamond to corrosion at high-temperature was investigated. The formation of W-Ti carbides on the surface of diamond was verified by X-ray diffraction analysis, the interface state between diamond and matrix in metaLbase diamond composite was observed by scanning electron microscope. The results showed that the carbide coating is easy to be formed at low deposition temperature on the surface of diamond, while the resistance of diamond to corrosion at highutemperature and the strength of bonding between diarnond and metal matrix are effectively improved.

关键词： diamond physical vapor deposition (PVD) tungsten carbides tungsten

Effects of Fe additive on diamond crystallization from carbonyl nickel powders-C system under HPHT condition

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Chinese Physics B 2015年第8期24卷 582-585页

作者：李勇贾晓鹏冯云光房超樊丽娟李亚东曾祥马红安 Physical and Applied Engineering Department Tongren University State Key Laboratory of Superhard Materials Jilin University

In this paper, diamond crystallization from carbonyl nickel powders-C and carbonyl nickel powders + Fe–C systems are investigated in detail at a pressure of 6.0 GPa and temperatures ranging from 1410°C–to 1435°C by temperature gradient growth. The effects of Fe additive on the crystal morphology are discussed in the diamond crystallization ***, Fourier infrared measurement results indicate that the spectrum of the diamond obtained from Ni + Fe–C system after annealing treatment is nearly consistent with that of natural diamond crystal. We believe that this study is of benefit to a further understanding of the growth mechanism of natural diamond.

关键词： high pressure and high temperature carbonyl nickel powder catalyst annealing diamond